Patents Assigned to Canon Sales Co., Inc.
  • Patent number: 8239296
    Abstract: An exchange assisting system is provided in an exchange center. Each maker who trades in used goods, such as copying machines, for new ones from a business entity brings goods produced by other makers into the exchange center. The system manages the inventory information of goods delivered from each maker and stored in the exchange center. The system prepares inventory information on goods maker by maker every given period and sends the information to each maker on-line. Each maker prepares list data of goods the maker wants to collect based on the inventory information and sends the list data to the exchange assisting system on-line. The exchange assisting system prepares delivering-out information for delivering goods out of the exchange center based on the desired goods-to-ship data and outputs the information as one needed to ship associated goods to each maker.
    Type: Grant
    Filed: January 3, 2007
    Date of Patent: August 7, 2012
    Assignees: Ricoh Company, Ltd., Canon Sales Co., Inc., Fuji Xerox Co., Ltd., Japan Business Machine Makers Association
    Inventors: Yoshio Itoi, Takashige Sudo, Shigeru Shimomura
  • Patent number: 6911405
    Abstract: A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: June 28, 2005
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Youichi Yamamoto, Yuichiro Kotake, Hiroshi Ikakura, Shoji Ohgawara
  • Patent number: 6900144
    Abstract: A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.
    Type: Grant
    Filed: March 15, 2001
    Date of Patent: May 31, 2005
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Kazuo Maeda, Setsu Suzuki, Takayoshi Azumi, Kiyotaka Sasaki
  • Patent number: 6852651
    Abstract: The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.
    Type: Grant
    Filed: October 2, 2001
    Date of Patent: February 8, 2005
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Yuichiro Kotake, Tomomi Suzuki, Hiroshi Ikakura, Kazuo Maeda
  • Patent number: 6835669
    Abstract: The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed on a substrate by converting into a plasma and reacting a film forming gas including a component selected from the group consisting of alkoxy compounds having Si—H bonds and siloxanes having Si—H bonds and an oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.
    Type: Grant
    Filed: July 13, 2001
    Date of Patent: December 28, 2004
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Taizo Oku, Junichi Aoki, Youichi Yamamoto, Takashi Koromokawa, Kazuo Maeda
  • Patent number: 6815824
    Abstract: The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.
    Type: Grant
    Filed: June 24, 2002
    Date of Patent: November 9, 2004
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co. Ld.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura
  • Patent number: 6780790
    Abstract: A semiconductor device having a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method includes supplying high frequency power of a frequency of 1 MHz or more to a first electrode, and holding a substrate on which copper wiring is formed on a second electrode facing the first electrode; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes while regulating gas pressure of the film forming gas to 1 Torr or less; and supplying high frequency power to either of the first and second electrodes to convert the film forming gas into a plasma, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react to form a barrier insulating film covering the surface of the substrate.
    Type: Grant
    Filed: November 5, 2002
    Date of Patent: August 24, 2004
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Tomomi Suzuki, Kazuo Maeda
  • Patent number: 6750137
    Abstract: A method for forming an interlayer insulating film includes the steps of forming an underlying insulating film on a substrate; forming a film containing B (boron), C (carbon) and H2O) on the underlying insulating film by plasma enhanced chemical vapor deposition using a source gas containing an Si—C—O—H compound, an oxidative gas and a compound containing B (boron); releasing C (carbon) and H2O in the film from the film by annealing the film, and thereby forming a porous SiO2 film containing B (boron); and subjecting to the porous SiO2 film containing B (boron) to H (hydrogen) plasma treatment, and then forming a cover insulating film.
    Type: Grant
    Filed: March 6, 2000
    Date of Patent: June 15, 2004
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventor: Kazuo Maeda
  • Patent number: 6713383
    Abstract: A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3 gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a fÀ-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (CxHy), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: March 30, 2004
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Tomomi Suzuki, Shoji Ohgawara, Kazuo Maeda
  • Patent number: 6673725
    Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plasma of a film-forming gas containing an oxygen-containing gas of N2O, H2O, or CO2, ammonia (NH3), and at least one of an alkyl compound having a siloxane bond and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3).
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: January 6, 2004
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda
  • Patent number: 6649495
    Abstract: The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: November 18, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Tomomi Suzuki, Hiroshi Ikakura, Kazuo Maeda
  • Patent number: 6645883
    Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.
    Type: Grant
    Filed: May 24, 2001
    Date of Patent: November 11, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Youichi Yamamoto, Hiroshi Ikakura, Tomomi Suzuki, Yuichiro Kotake, Yoshimi Shioya, Kouichi Ohira, Shoji Ohgawara, Kazuo Maeda
  • Patent number: 6646327
    Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.
    Type: Grant
    Filed: April 22, 2002
    Date of Patent: November 11, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Taizo Oku, Junichi Aoki, Youichi Yamamoto, Takashi Koromokawa
  • Patent number: 6642157
    Abstract: There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: November 4, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Yuichiro Kotake, Youichi Yamamoto, Tomomi Suzuki, Hiroshi Ikakura, Shoji Ohgawara, Kouichi Ohira, Kazuo Maeda
  • Patent number: 6630412
    Abstract: In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.
    Type: Grant
    Filed: July 3, 2001
    Date of Patent: October 7, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura, Youichi Yamamoto
  • Publication number: 20030109136
    Abstract: Disclosed is a method of manufacturing a semiconductor device in which a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method comprises the steps of connecting a supply power source for supplying high frequency power of a frequency of 1 MHz or more to a first electrode 2, and holding a substrate 21 on a second electrode 3 facing the first electrode 2, the substrate 21 on which a copper wiring is formed; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes 2, 3, and regulating a gas pressure of the film forming gas to 1 Torr or less; and supplying the high frequency power to any one of the first and second electrodes 2, 3 to convert the film forming gas into a plasma state, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react with each other and thus form a barrier insulating film covering the surface of the substrate 21.
    Type: Application
    Filed: November 5, 2002
    Publication date: June 12, 2003
    Applicant: CANON SALES CO., INC.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Tomomi Suzuki, Kazuo Maeda
  • Publication number: 20030104689
    Abstract: The present invention provides a manufacturing method of a semiconductor device, in which a main insulating film whose relative dielectric constant is drastically reduced can be formed on a barrier insulating film that covers wirings mainly consist of copper film. The configuration of the method is that film forming gas containing either siloxane or methylsilane, oxygen-containing gas, and etching gas, is transformed into plasma to cause reaction so as to form an insulating film 35b having low dielectric constant on a substrate 21 subject to deposition.
    Type: Application
    Filed: October 30, 2002
    Publication date: June 5, 2003
    Applicant: CANON SALES CO., INC. AND SEMICONDUCTOR PROCESS LABORATORY CO., LTD.
    Inventors: Yoshimi Shioya, Kazuo Maeda, Hiroshi Ikakura
  • Publication number: 20030042613
    Abstract: The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. In structure, the barrier insulating film 34a comprises a double-layered structure or more that is provided with at least a first barrier insulating film 34aa containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film 34ab containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.
    Type: Application
    Filed: June 24, 2002
    Publication date: March 6, 2003
    Applicant: CANON SALES CO., INC.
    Inventors: Yoshimi Shioya, Yuhko Nishimoto, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura
  • Patent number: 6524972
    Abstract: A method for forming an interlayer insulating film is disclosed. This method comprises the steps of: forming an underlying insulating film on an object to be formed; and forming a porous SiO2 film on said underlying insulating film by a Chemical Vapor Deposition that employs a source gas containing TEOS (tetraethoxy silane) and O3 where the O3 is contained in the source gas with first concentration that is lower than concentration necessary for oxidizing the TEOS. Alternative method for forming an interlayer insulating film is also disclosed. This method comprises the step of: forming an underlying insulating film on an object to be formed; performing Cl (chlorine) plasma treatment for the underlying insulating film; and forming a porous SiO2 film on the underlying insulating film by a Chemical Vapor Deposition that employs a source gas containing TEOS (tetraethoxy silane) and O3.
    Type: Grant
    Filed: March 9, 2000
    Date of Patent: February 25, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventor: Kazuo Maeda
  • Patent number: 6514855
    Abstract: The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.
    Type: Grant
    Filed: April 12, 2000
    Date of Patent: February 4, 2003
    Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
    Inventors: Tomomi Suzuki, Hiroshi Ikakura, Kazuo Maeda, Yoshimi Shioya, Koichi Ohira