Abstract: There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.
Type:
Grant
Filed:
July 25, 2000
Date of Patent:
April 15, 2003
Assignees:
Canon Sales Co., Ltd., Semiconductor Process Laboratory Co., Ltd.
Abstract: A process gas containing any one of N2 or N2O is plasmanized and then a surface of a copper wiring layer is exposed to the plasmanized process gas, whereby a surface layer portion of a copper wiring layer is reformed and made into a copper diffusion preventing layer. According to this method, a noble semiconductor device can be provided, in which, along with increasing the operation speed, the copper diffusion is suppressed.
Abstract: There is provided a semiconductor manufacturing system and a method for cleaning the same. Silicon oxide adhering to Elements, which constitute the system, is removed by a cleaning gas containing an HF gas and a water vapor together with by heating the elements.
© 2024 Justia
