Abstract: A radiation detector includes a halide semiconductor sandwiched between a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Abstract: In one aspect, a radiation detector is disclosed, which includes a substrate having a plurality of microcapillary channels, and a crystalline scintillator material disposed in said channels so as to generate a plurality of independent radiation sensing elements associated with each channel for detecting incident radiation and generating an optical radiation in response to the detection of the incident radiation. In some embodiments, the incident radiation can include any of alpha (?), beta (?), gamma (?), X-ray and neutrons.

Abstract: In one aspect, a radiation detector is disclosed, which includes a substrate having a plurality of microcapillary channels, and a crystalline scintillator material disposed in said channels so as to generate a plurality of independent radiation sensing elements associated with each channel for detecting incident radiation and generating an optical radiation in response to the detection of the incident radiation. In some embodiments, the incident radiation can include any of alpha (?), beta (?), gamma (?), X-ray and neutrons.

Abstract: A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Abstract: A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Abstract: A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Abstract: A composite scintillator includes a matrix material and pieces of at least one scintillator material embedded in the matrix material. The scintillator material is (a) inorganic single-crystalline or ceramic, (b) organic plastic, or (c) glassy; and the embedded scintillator material scintillates in response to at least one of gamma-ray and neutron irradiation.

Abstract: A composite scintillator includes a matrix material and pieces of at least one scintillator material embedded in the matrix material. The scintillator material is (a) inorganic single-crystalline or ceramic, (b) organic plastic, or (c) glassy; and the embedded scintillator material scintillates in response to at least one of gamma-ray and neutron irradiation.

Abstract: An alloy semiconductor can be grown using a container including a lower section containing a composition-control source material and an upper section containing a solid. The composition-control source material is heated to produce a vapor, and the solid charge is melted to form a melt with a melt meniscus extending to an inner surface of the container. The vaporized composition-control source material flows from the lower section to the upper and contacts the melt meniscus. The melt is then cooled to form a crystal.