Abstract: A probe for direct nano- and micro-scale electrical characterization of materials and semi conductor wafers. The probe (10) comprises a probe body (12), a first cantilever (20a) extending from the probe body. The first cantilever defining a first loop with respect to said probe body. The probe further comprises a first contact probe being supported by said first cantilever, and a second contact probe being electrically insulated from the first contact probe. The second contact probe being supported by the first cantilever or by a second cantilever (20b) extending from the probe body.

Abstract: The present invention relates to a method of establishing specific electrode positions by providing a multi-point probe and a test sample. The method comprises the measuring or determining of a distance between two of the electrodes of the multi-point probe and establishing a resistance model representative of the test sample. The method further comprises the performing of at least three different sheet resistance measurements and establishing for each of the different sheet resistance measurement a corresponding predicted sheet resistance based on the resistance model. Thereafter the method comprises the establishment of a set of differences constituting the difference between each of the predicted sheet resistance and its corresponding measured sheet resistance, and deriving the specific electrode positions of the multi-point probe on the surface of the test sample by using the distance and performing a data fit by minimizing an error function constituting the sum of the set of differences.

Abstract: A probe for direct nano- and micro-scale electrical characterization of materials and semi conductor wafers. The probe (10) comprises a probe body (12), a first cantilever (20a) extending from the probe body. The first cantilever defining a first loop with respect to said probe body. The probe further comprises a first contact probe being supported by said first cantilever, and a second contact probe being electrically insulated from the first contact probe. The second contact probe being supported by the first cantilever or by a second cantilever (20b) extending from the probe body.

Abstract: The present invention relates to a method of establishing specific electrode positions by providing a multi-point probe and a test sample. The method comprises the measuring or determining of a distance between two of the electrodes of the multi-point probe and establishing a resistance model representative of the test sample. The method further comprises the performing of at least three different sheet resistance measurements and establishing for each of the different sheet resistance measurement a corresponding predicted sheet resistance based on the resistance model. Thereafter the method comprises the establishment of a set of differences constituting the difference between each of the predicted sheet resistance and its corresponding measured sheet resistance, and deriving the specific electrode positions of the multi-point probe on the surface of the test sample by using the distance and performing a data fit by minimizing an error function constituting the sum of the set of differences.

Abstract: A multipoint probe for establishing an electrical connection between a test apparatus and a test sample, the multipoint probe comprising a base defining a top surface and a plurality of traces provided on the top surface, each trace individually interconnecting a contact pad and a contact electrode for establishing the electrical connection to the test sample, each trace comprising a wide portion connected to the contact pad and a narrow portion connected to the contact electrode; the first top surface comprising first intermediate surfaces, each interconnecting a pair of neighboring traces at their respective wide portions, and second intermediate surfaces, each interconnecting a pair of neighboring traces at their respective narrow portions, and the first intermediate surfaces being provided on a first level and the second intermediate surfaces being provided on a second level above the first level relative to the base.

Abstract: A method for determining an electrical property of a test sample having a conductive surface portion with an electrical boundary includes (a) determining a first distance between the single position and the boundary by (1) contacting the test sample with a first four-contact configuration of a multi-contact probe at the single position; (2) applying a magnetic field at the single position; (3) measuring first and second resistances from which to calculate a first resistance difference; (4) measuring third and fourth resistances from which to calculate a second resistance difference; (5) defining a first relation including parameters representing the first and second resistance differences and the first distance; (6) determining the first distance by using the first and second resistance differences in the first relation; (b) repeating steps (1)-(6) with a second four-contact configuration to determine a second distance between the single position and the boundary; (c) defining a second relation including the

Abstract: A method of obtaining an electrical property of a test sample, comprising a non-conductive area and a conductive or semi-conductive test area, by performing multiple measurements using a multi-point probe. The method comprising the steps of providing a magnetic field having field lines passing perpendicularly through the test area, bringing the probe into a first position on the test area, the conductive tips of the probe being in contact with the test area, determining a position for each tip relative to the boundary between the non-conductive area and the test area, determining distances between each tip, selecting one tip to be a current source positioned between conductive tips being used for determining a voltage in the test sample, performing a first measurement, moving the probe and performing a second measurement, calculating on the basis of the first and second measurement the electrical property of the test area.

Abstract: A multi-point probe particularly suitable for automated handling is disclosed. An automated multi-point measuring system including the multi-point probe and a probe manipulator head is also disclosed In addition, an automated multi-point probe gripping system including a probe holder and the probe manipulator head is revealed. Further, a loaded probe loader comprising a probe loader and a probe cassette for handling the multi-point probe is also revealed, where the probe cassette is provided with the probe holder for securing the multi-point probe.

Abstract: A method for determining a distance (Y) between a first position on and an electrical boundary (34) of a test sample by a multi-point probe comprising four contact elements, comprising: contacting the test sample with the four contact elements (20,22,24,26) at the first position, applying a magnetic field at the first position, performing a first and a second four-point measurement and deriving a first and a second resistance value, calculating a first resistance difference from the first and second resistance values, performing a third and a fourth four-point measurement and deriving a third and a fourth resistance value, calculating a second resistance difference from the third and fourth resistance values, defining a first relation including parameters representing the first resistance difference, the second resistance difference, and the distance between the first position and the electrical boundary, determining the distance by using the first and the second resistance differences in the first relation.

Abstract: A method for aligning a probe relative to a supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.

Abstract: A probe for testing electrical properties of test samples includes a body having a probe arm defining proximal and distal ends, the probe arm extending from the body at the proximal end of the probe arm, whereby a first axis is defined by the proximal and the distal ends. The probe arm defines a geometry allowing flexible movement of the probe arm along the first axis and along a second axis perpendicular to the first axis, and along a third axis orthogonal to a plane defined by the first axis and the second axis.

Abstract: A method for accurately determining the sheet resistance and leakage current density of a shallow implant in a semiconductor surface (520) includes making one or more four-point resistance measurements with an induced current below 100 ?A on the semiconductor surface (520) with a plurality of electrode spacing sets, at least one set having an average spacing below 100 ?m. The sheet resistance and implant leakage is determined through fitting the measured data to theoretical data to within a predetermined error.

Abstract: A method for accurately determining the sheet resistance and leakage current density of a shallow implant in a semiconductor surface (520) includes making one or more four-point resistance measurements with an induced current below 100 ?A on the semiconductor surface (520) with a plurality of electrode spacing sets, at least one set having an average spacing below 100 ?m. The sheet resistance and implant leakage is determined through fitting the measured data to theoretical data to within a predetermined error.

Abstract: The present invention relates to a probe for determining an electrical property of an area of a surface of a test sample, the probe is intended to be in a specific orientation relative to the test sample. The probe may comprise a supporting body defining a first surface. A plurality of cantilever arms (12) may extend from the supporting body in co-planar relationship with the first surface. The plurality of cantilever arms (12) may extend substantially parallel to each other and each of the plurality of cantilever arms (12) may include an electrical conductive tip for contacting the area of the test sample by movement of the probe relative to the surface of the test sample into the specific orientation. The probe may further comprise a contact detector (14) extending from the supporting body arranged so as to contact the surface of the test sample prior to any one of the plurality of cantilever arms (12) contacting the surface of the test sample when performing the movement.

Abstract: Calculating resistance correction factors includes contacting the arms of a four-arm probe with a test sample; selecting a first set of first and second arms and a second set of third and fourth arms; applying a first current from the first arm to the second arm of the first set; detecting a first voltage between the third and fourth arms of the second set; calculating a first resistance using the first voltage and current; selecting a third set of first and second arms including no more than one arm of the first set, and a fourth set of third and fourth arms including no more than one arm of the second set; applying a second current from the first arm to the second arm of the third set; detecting a second voltage between the third and fourth arms of the fourth set; calculating a second resistance using the second voltage and current; and calculating a correction factor using the first and second resistances.

Abstract: A method for aligning a probe relative to a supporting substrate defining a first planar surface, an edge, and a first crystal plane includes the steps of masking the surface of the substrate to define an exposed area on the first surface at the edge; and etching, using an etch reagent, a recess in the exposed area, the recess defining first and second opposed sidewalls, an end wall remote from the edge, and a bottom wall. The method further includes the step of providing a probe substrate defining a second planar surface and a second crystal plane identical to the first crystal plane, and positioning the probe substrate so that the first and the second crystal planes are positioned identically when forming a probe from the probe substrate using the etch reagent, wherein the probe defines congruent surfaces to the first and second sidewalls.

Abstract: Calculating resistance correction factors includes contacting the arms of a four-arm probe with a test sample; selecting a first set of first and second arms and a second set of third and fourth arms; applying a first current from the first arm to the second arm of the first set; detecting a first voltage between the third and fourth arms of the second set; calculating a first resistance using the first voltage and current; selecting a third set of first and second arms including no more than one arm of the first set, and a fourth set of third and fourth arms including no more than one arm of the second set; applying a second current from the first arm to the second arm of the third set; detecting a second voltage between the third and fourth arms of the fourth set; calculating a second resistance using the second voltage and current; and calculating a correction factor using the first and second resistances.