Patents Assigned to Caracal, Inc. - Justia Patents Search

Patents Assigned to Caracal, Inc.

Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide

Patent number: 7247513

Abstract: A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer formed by the methods of the invention.

Type: Grant

Filed: May 8, 2003

Date of Patent: July 24, 2007

Assignee: Caracal, Inc.

Inventor: Olof Claes Erik Kordina