Abstract: The present inventions relates to a substrate for a photolithographic mask comprising a coating deposited on a rear surface of the substrate, wherein the coating comprises (a) at least one electrically conducting layer, and (b) wherein a thickness of the at least one layer is smaller than 30 nm, preferably smaller than 20 nm, and most preferably smaller than 10 nm.
Type:
Grant
Filed:
October 12, 2012
Date of Patent:
December 13, 2016
Assignees:
Fundació Institut de Ciències Fotòniques, Cark Zeiss SMT GmbH
Inventors:
Valerio Pruneri, Albert Carrilero, Jan-Hendrik Peters