Abstract: In one aspect, methods of nanopore formation in solid state membranes are described herein, In some embodiments, a method of forming an aperture comprises providing at least one solid state membrane in a chamber, selecting a first dose of ions sufficient to provide a first aperture of predetermined diameter through the membrane and exposing a surface of the membrane at a first location to the first dose of ions in a focused ion beam having a focal point of diameter less than or equal to about 1 nm to remove material from the membrane at the first location thereby providing the first aperture having the predetermined diameter or substantially the predetermined diameter.

Abstract: Ion microscope methods and systems are disclosed. In general, the systems and methods involve relatively light isotopes, minority isotopes or both. In some embodiments, an isotope of Neon is used.

Abstract: Cooled charged particle sources and methods are disclosed. In some embodiments, a charged particle source is thermally coupled to a solid cryogen, such as solid nitrogen. The thermal coupling can be design to provide good thermal conductivity to maintain the charged particle source at a desirably low temperature.

Abstract: Ion microscope methods and systems are disclosed. In general, the systems and methods involve relatively light isotopes, minority isotopes or both. In some embodiments, He-3 is used.

Abstract: A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench (110) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.

Abstract: Methods and systems for defect repair are disclosed. The methods include: (a) identifying a defect causing an absence of an electrical connection between a first circuit element and a second circuit element, the first and second circuit elements being positioned in or on a substrate and the defect being positioned in the substrate; (b) removing a portion of the substrate to expose the defect, and depositing a conductive material to electrically connect the first and second circuit elements; and (c) verifying that the defect caused the absence of an electrical connection between the first and second circuit elements.

Abstract: Coated tips, as well as related articles, systems and methods are disclosed.

Abstract: Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance (e.g., increase reliability, stability and the like).

Abstract: Disclosed are methods for preparing samples that include forming a first channel in a material by directing a first plurality of noble gas ions at the material, forming a second channel in the material by directing a second plurality of noble gas ions at the material, where the second channel is spaced from the first channel so that a portion of the material between channels has a mean thickness of 100 nm or less, and detaching the portion from the material to yield the sample.

Abstract: Charged particle beams with different charged particle currents are disclosed. In some embodiments, a method includes exposing a sample to a first ion beam having a first ion current at the sample, and exposing the sample to a second ion beam having a second ion current at the sample, where the first ion current is at least two times greater than the second ion current. In certain embodiments, a method includes creating a first ion beam at a first pressure, exposing a sample to the first ion beam, creating a second ion beam at a second pressure, and exposing the sample to the second ion beam, where the first pressure is at least two times greater than the second pressure.

Abstract: Disclosed are systems and methods for applying a voltage gradient to a gas delivery system, delivering a gas through a length of the gas delivery system having the voltage gradient, the gas having a pressure-distance product of less than about 1×010?2 Torr-inches or greater than about 100 Torr-inches, and delivering the gas into a housing of an ion microscope, the housing including an emitter and an extractor.

Abstract: Charged particle system are disclosed and include a first voltage source, a second voltage source electrically isolated from the first voltage source, a charged particle source electrically connected to the first voltage source, and an extractor electrically connected to the second voltage source. Methods relating to the charged particle systems are also disclosed.

Abstract: Ion microscope methods and systems are disclosed. In general, the systems and methods provide high ion beam stability.

Abstract: A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench (110) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.

Abstract: Systems and methods for heating an apex of a tip of a charged particle source are disclosed. The charged particle source can be, for example, a gas ion source. The systems can include a detector configured to detect light generated by the tip apex, and a controller coupled with the charged particle source and the detector so that the controller can control heating of the tip apex based on the light detected by the detector.

Abstract: The disclosure relates to ion beams systems, such as gas field ion microscopes, having multiple modes of operation, as well as related methods. In some embodiments, the disclosure provides a method of operating a gas field ion microscope system that includes a gas field ion source, where the gas field ion source includes a tip including a plurality of atoms.

Abstract: Disclosed are devices, systems, and methods are disclosed that include: (a) a first material layer positioned on a first surface of a support structure and configured to generate secondary electrons in response to incident charged particles that strike the first layer, the first layer including an aperture configured to permit a portion of the incident charged particles to pass through the aperture; and (b) a second material layer positioned on a second surface of the support structure and separated from the first layer by a distance of 0.5 cm or more, the second layer being configured to generate secondary electrons in response to charged particles that pass through the aperture and strike the second layer, where the device is a charged particle detector.

Abstract: In general, in one aspect, the disclosure features a method and system for imaging of samples, for example, imaging samples with charged particles.

Abstract: Disclosed are charged particle systems that include a tip, at least one gas inlet configured to supply gas particles to the tip, and a element having a curved surface positioned to adsorb un-ionized gas particles, and to direct desorbing gas particles to propagate toward the tip. The charged particle systems can include a field shunt connected to the tip, and configured to adjust an electric field at an apex of the tip.

Abstract: Ion microscope methods and systems are disclosed. In general, the systems and methods provide high ion beam stability.