Patents Assigned to Carl Zeiss SMS Ltd
  • Patent number: 10353295
    Abstract: A method for generating a predetermined three-dimensional contour of a component and/or a wafer comprises: (a) determining a deviation of an existing three-dimensional contour of the component and/or the wafer from the predetermined three-dimensional contour; (b) calculating at least one three-dimensional arrangement of laser pulses having one or more parameter sets defining the laser pulses for correcting the determined existing deviation of the three-dimensional contour from the predetermined three-dimensional contour; and (c) applying the calculated at least one three-dimensional arrangement of laser pulses on the component and/or the wafer for generating the predetermined three-dimensional contour.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: July 16, 2019
    Assignees: Carl Zeiss SMS Ltd., Carl Zeiss SMT GmbH
    Inventors: Vladimir Dmitriev, Bernd Geh
  • Patent number: 10157804
    Abstract: The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic mask, each sub-area comprising a group of features, (b) measuring a distribution of a transmission of each sub-area, (c) determining a deviation of the transmission from a mean transmission value for each sub-area, (d) determining a constant specific for each sub-area, and (e) determining the critical dimension variation of the photolithographic mask by combining for each sub-area the deviation of the transmission and the sub-area specific constant.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: December 18, 2018
    Assignee: Carl Zeiss SMS Ltd.
    Inventor: Rainer Pforr
  • Patent number: 10114294
    Abstract: Method, apparatus for imparting direction-selective light attenuation. A method for imparting direction-selective light attenuation to a photomask may include assigning different attenuation levels to light rays of different directions of incidence. The method may also include computing an array of shading elements to attenuate the light rays with the assigned different attenuation levels, depending on the direction of incidence of the light rays. The method may further include inscribing the array of shading elements within a substrate of the photomask.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: October 30, 2018
    Assignee: Carl Zeiss SMS Ltd.
    Inventor: Vladimir Dmitriev
  • Patent number: 10061192
    Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: August 28, 2018
    Assignees: Carl Zeiss SMT GmbH, Carl Zeiss SMS Ltd.
    Inventors: Dirk Beyer, Vladimir Dmitriev, Ofir Sharoni, Nadav Wertsman
  • Patent number: 9798249
    Abstract: The invention relates to a method for compensating at least one defect of an optical system which includes introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: October 24, 2017
    Assignees: Carl Zeiss SMT GmbH, Carl Zeiss SMS Ltd.
    Inventors: Vladimir Dmitriev, Ingo Saenger, Frank Schlesener, Markus Mengel, Johannes Ruoff
  • Patent number: 9753366
    Abstract: The invention relates to a method for determining at least one unknown laser beam parameter of a laser beam used for correcting errors of a transparent material including inducing a first persistent modification in the material by an interaction with the laser beam having a first set of laser beam parameters, measuring the induced first persistent modification of the material, calculating a second persistent modification in the material using a model describing persistent modifications in the material with a second set of laser beam parameters, wherein the first set of laser beam parameters comprises the second set of laser beam parameters and the at least one unknown laser beam parameter, setting up a target functional including the first persistent modification and the second persistent modification, and determining the at least one unknown laser beam parameter by minimizing the target functional.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: September 5, 2017
    Assignee: Carl Zeiss SMS Ltd.
    Inventor: Vladimir Dmitriev
  • Patent number: 9690191
    Abstract: A method for repairing a defect on a substrate surface includes placing on the defect a nanoparticle that includes a conductive material. A region of the substrate surface in which the nanoparticle is placed is irradiated, the region being larger than the nanoparticle. An energy density of the irradiation is below a modification threshold for the substrate surface.
    Type: Grant
    Filed: February 17, 2014
    Date of Patent: June 27, 2017
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Sergey Oshemkov, Vladimir Kruglyakov
  • Patent number: 9658527
    Abstract: A method for correcting a plurality of errors of a photolithographic mask is provided. First parameters of a imaging transformation of the photolithographic mask and second parameters of a laser beam locally directed onto the photolithographic mask are optimized, and the plurality of errors are corrected by applying an imaging transformation using optimized first parameters and locally directing the laser beam onto the photolithographic mask using optimized second parameters. The first and the second parameters are simultaneously optimized in a joint optimization process.
    Type: Grant
    Filed: July 11, 2011
    Date of Patent: May 23, 2017
    Assignee: Carl Zeiss SMS Ltd.
    Inventor: Vladimir Dmitriev
  • Patent number: 9606444
    Abstract: The invention relates to a method for locally deforming an optical element for photolithography in accordance with a predefined deformation form comprising: (a) generating at least one laser pulse having at least one laser beam parameter; and (b) directing the at least one laser pulse onto the optical element, wherein the at least one laser beam parameter of the laser pulse is selected to yield the predefined deformation form.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: March 28, 2017
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Vladimir Dmitriev, Uri Stern
  • Patent number: 9436080
    Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: September 6, 2016
    Assignees: Carl Zeiss SMS GmbH, Carl Zeiss SMS Ltd.
    Inventors: Dirk Beyer, Vladimir Dmitriev, Ofir Sharoni, Nadav Wertsman
  • Patent number: 9207530
    Abstract: A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: December 8, 2015
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Vladimir Dmitriev, Ofir Sharoni, Erez Graitzer, Igor Varvaruk, Guy Ben-Zvi
  • Patent number: 9134112
    Abstract: A contribution to a wafer level critical dimension distribution from a scanner of a lithography system can be determined based on measured wafer level critical dimension uniformity distribution and a contribution to the wafer level critical dimension distribution from a photo mask. Light transmission (104) across the photo mask (162) can be measured, a transmittance variation distribution of the photo mask can be determined, and the contribution to the wafer level critical dimension distribution from the photo mask (162) can be determined (132) based on the transmittance variation distribution of the photo mask.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: September 15, 2015
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Ofir Sharoni, Vladimir Dmitriev, Eran Chason, Guy Ben-Zvi, Igor Varvaruk
  • Patent number: 9034539
    Abstract: A system for processing a substrate includes a light source to provide light pulses, a stage to support a substrate, optics to focus the light pulses onto the substrate, a scanner to scan the light pulses across the substrate, a computer to control properties of the light pulses and the scanning of the light pulses such that color centers are generated in various regions of the substrate, and at least one of (i) an ultraviolet light source to irradiate the substrate with ultraviolet light or (ii) a heater to heat the substrate after formation of the color centers to stabilize a transmittance spectrum of the substrate.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: May 19, 2015
    Assignees: Carl Zeiss SMS GmbH, Carl Zeiss SMT GmbH, Carl Zeiss SMS Ltd.
    Inventors: Sergey Oshemkov, Ralph Klaesges, Markus Mengel, Vladimir Kruglyakov, Eitan Zait, Vladimir Dmitriev, Guy Ben-Zvi, Steven Labovitz
  • Patent number: 8871409
    Abstract: A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: October 28, 2014
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Rainer Pforr, Guy Ben-Zvi, Vladimir Dmitriev, Erez Graitzer
  • Patent number: 8869076
    Abstract: Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients.
    Type: Grant
    Filed: October 5, 2011
    Date of Patent: October 21, 2014
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Vladimir Dmitriev, Ofir Sharoni
  • Publication number: 20140236516
    Abstract: The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic mask, each sub-area comprising a group of features, (b) measuring a distribution of a transmission of each sub-area, (c) determining a deviation of the transmission from a mean transmission value for each sub-area, (d) determining a constant specific for each sub-area, and (e) determining the critical dimension variation of the photolithographic mask by combining for each sub-area the deviation of the transmission and the sub-area specific constant.
    Type: Application
    Filed: July 20, 2012
    Publication date: August 21, 2014
    Applicant: CARL ZEISS SMS LTD.
    Inventor: Rainer Pforr
  • Patent number: 8735030
    Abstract: Disclosed is a method of modifying of a surface of a substrate of a photolithographic mask for extreme ultraviolet radiation comprising the step of focusing femtosecond light pulses of a laser system onto the substrate so that a plurality of color centers is generated inside the substrate, wherein the color centers are distributed to cause a modification of the substrate surface.
    Type: Grant
    Filed: April 12, 2011
    Date of Patent: May 27, 2014
    Assignees: Carl Zeiss SMT GmbH, Carl Zeiss SMS GmbH., Carl Zeiss SMS Ltd
    Inventors: Sergey Oshemkov, Ralph Klaesges, Markus Mengel
  • Publication number: 20140036243
    Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
    Type: Application
    Filed: December 2, 2011
    Publication date: February 6, 2014
    Applicants: CARL ZEISS SMS LTD., CARL ZEISS SMS GMBH
    Inventors: Dirk Beyer, Vladimir Dmitriev, Ofir Sharoni, Nadav Wertsman
  • Patent number: 8592770
    Abstract: Apparatus and method for transmittance mapping of an object which is at least partially transparent to deep ultraviolet radiation. The method comprises directing a wide-band deep ultraviolet radiation so as to illuminate different areas of an array of successive areas of the object; using an optical detector positioned on an opposite side of the object with respect to the radiation source detecting the wide-band deep ultraviolet radiation that emerges from the object; and processing signals from the optical detector to determine the transmittance of the radiation through the different areas of the array of successive areas of the object.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: November 26, 2013
    Assignee: Carl Zeiss SMS Ltd.
    Inventors: Guy Ben-Zvi, Eitan Zait, Vladimir J. Dmitriev, Steven M. Labovitz, Erez Graitzer, Ofir Sharoni
  • Publication number: 20130263061
    Abstract: Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients.
    Type: Application
    Filed: October 5, 2011
    Publication date: October 3, 2013
    Applicant: CARL ZEISS SMS LTD.
    Inventors: Vladimir Dmitriev, Ofir Sharoni