Abstract: In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.

Abstract: A projection objective for microlithography is used for imaging an object field in an object plane into an image field in an image plane. The projection objective comprises at least six mirrors of which at least one mirror has a freeform reflecting surface. The ratio between an overall length (T) of the projection objective and an object image shift (dOIS) can be smaller than 12. The image plane is the first field plane of the projection objective downstream of the object plane. The projection objective can have a plurality of mirrors, wherein the ratio between an overall length (T) and an object image shift (dOIS) is smaller than 2.

Abstract: The disclosure relates to an optical integrator configured to produce a plurality of secondary light sources in an illumination system of a microlithographic projection exposure apparatus. The disclosure also relates to a method of manufacturing an array of elongated microlenses for use in such an illumination system. Arrays of elongated microlenses are often contained in optical integrators or scattering plates of such illumination systems.

Abstract: The present disclosure relates to an optical device, in particular for microlithography, having an optical module, a supporting structure and a force-generating device. The force-generating device is connected to the optical module and the supporting structure and is designed to exert a clamping force on the optical module. The force-generating device has a fluidic force-generating element having a working chamber to which a working fluid having a working pressure can be applied. The force-generating element takes the form of a muscle element which exerts a first tensile force at a first working pressure and a second tensile force which is increased with respect to the first tensile force at a second working pressure which is increased with respect to the first working pressure.

Abstract: A projection objective of a microlithographic projection exposure apparatus comprises a manipulator for reducing rotationally asymmetric image errors. The manipulator in turn contains a lens, an optical element and an interspace formed between the lens and the optical element, which can be filled with a liquid. At least one actuator acting exclusively on the lens is furthermore provided, which can generate a rotationally asymmetric deformation of the lens.

Abstract: An illumination optics illuminates an object field of a projection exposure apparatus for microlithography. The illumination optics include a condenser group of optical components which guide a bundle of useful light. An objective group of bundle-guiding components is arranged downstream of the condenser group. At least one component of the condenser group and at least one component of the objective group are displaceable for compensation of deviations of the object field, which is in an actual illumination state, from a desired illumination state.

Abstract: In a method for multiply exposing at least one substrate coated with a photosensitive layer, a first exposure is carried out in accordance with a first set of exposure parameters on a first projection system, and a second exposure is carried out in accordance with a second set of exposure parameters on a second projection system spatially separated from the first projection system. The projection systems are integrated in a common projection exposure installation. The first exposure can be carried out, for example, with an amplitude mask, the second exposure with a phase mask. The use of a number of projection systems enables multiple exposure that is performed in parallel and is therefore timesaving.

Abstract: The disclosure relates to an EUV (extreme ultraviolet) illumination system. The system can include at least one EUV light source, and an aperture stop and sensor arrangement for the measurement of intensity fluctuations and/or position changes of the EUV light source, in particular in the range of the effectively utilized wavelengths, or of one of the intermediate images of the EUV light source. The aperture stop and sensor arrangement can include an aperture stop and an EUV position sensor. The aperture stop and sensor arrangement can be arranged in such a way that the aperture stop allows a certain solid angle range of the radiation originating from the EUV light source or from one of its intermediate images to fall on the EUV position sensor.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: An illumination system for illuminating a mask in a microlithographic projection exposure apparatus includes an array of mirrors or other beam deflecting elements. Each beam deflecting element produces on the surface a projection light spot at a position that is variable by changing a deflection angle produced by the beam deflecting element. A spot shape measuring unit measures the shapes of spots which are produced on the spot measuring unit by the beam deflecting elements. The spot shape measuring unit is arranged outside of every possible path projection light is allowed to take between the array and the mask. A control unit controls the beam deflecting elements such that, at a given instant during an exposure operation of the apparatus, at least one beam deflecting element directs projection light exclusively on the spot shape measuring unit, and at least some beam deflecting elements direct projection light exclusively on the surface.

Abstract: A projection illumination installation for EUV microlithography includes an EUV synchrotron light source for producing EUV used light. An object field is illuminated with the used light using illumination optics. The object field is mapped into an image field using projection optics. A scanning device is used to illuminate the object field by deflecting the used light in sync with a projection illumination period. The result is a projection illumination installation in which the output power from an EUV synchrotron light source can be used as efficiently as possible for EUV projection illumination.

Abstract: A focusing-device for the radiation from a light source (2) is provided with a collector mirror (1, 1?) which is arranged in a mount (24) and collects the light, in virtual or real terms, from the light source (2) at the second focus (200). The collector mirror (1, 1?) is displaceably connected to the mount (24) via a bearing in such a way that its optical properties remain at least approximately the same even in the event of temperature changes.

Abstract: A catadioptric objective includes a plurality of optical elements arranged along an optical axis to image a pattern from an object field in an object surface of the objective to an image field in an image surface region of the objective at an image-side numerical aperture NA with electromagnetic radiation from a wavelength band around a central wavelength ?<300 nm. The optical elements include a concave mirror and a plurality of lenses. The projection objective forms an image of the pattern in a respective Petzval surface for each wavelength ? of a wavelength band, the Petzval surfaces deviating from each other for different wavelengths. The plurality of lenses include lenses made from different materials having substantially different Abbe numbers.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, as well as related components and methods. In some embodiments, a microlithographic projection exposure apparatus includes an illumination system and a projection objective, where the illumination system can illuminate an object plane of the projection objective and the projection objective can produce the image of the object plane on an image plane. A polarization-dependent transmission can be produced in the illumination system such that, for at least one polarization distribution in respect of the light impinging on the object plane, a non-homogeneous intensity distribution in the object plane is obtained. The non-homogeneous intensity distribution can afford a homogeneous intensity distribution in the image plane by virtue of polarization-dependent transmission properties of the projection objective.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: The disclosure concerns a projection objective, which can include an object plane in which an object field is formed, an entry pupil, a mirrored entry pupil (RE) in a mirrored entry pupil plane obtained by mirroring the entry pupil (VE) at the object plane, an image plane, an optical axis, at least a first mirror and a second mirror. The projection objective can have a negative back focus of the entry pupil, and a principal ray originating from a central point of the object field and traversing the objective from the object plane to the image plane can intersect the optical axis in at least one point of intersection, wherein the geometric locations of all points of intersection lie between the image plane and the mirrored entry pupil plane.

Abstract: A facet mirror is to be used as a bundle-guiding optical component in a projection exposure apparatus for microlithography. The facet mirror has a plurality of separate mirrors. For individual deflection of incident illumination light, the separate mirrors are in each case connected to an actuator in such a way that they are separately tiltable about at least one tilt axis. A control device, which is connected to the actuators, is configured in such a way that a given grouping of the separate mirrors can be grouped into separate mirror groups that include in each case at least two separate mirrors. The result is a facet mirror which, when installed in the projection exposure apparatus, increases the variability for setting various illumination geometries of an object field to be illuminated by the projection exposure apparatus. Various embodiments of separate mirrors for forming the facet mirrors are described.

Abstract: There is provided an optical imaging arrangement comprising: a mask unit comprising a pattern, a substrate unit comprising a substrate, an optical projection unit comprising a group of optical element units, the optical projection unit being adapted to transfer an image of the pattern onto the substrate, a first imaging arrangement component, the first imaging arrangement component being a component of one of the optical element units, a second imaging arrangement component, the second imaging arrangement component being different from the first imaging arrangement component and being a component of one of the mask unit, the optical projection unit and the substrate unit, and a metrology arrangement. The metrology arrangement captures a spatial relationship between the first imaging arrangement component and the second imaging arrangement component. The metrology arrangement comprises a reference element, the reference element being mechanically connected directly to the first imaging arrangement component.

Abstract: There is provided an illumination system for microlithography with wavelengths ?193 nm. The illumination system includes a primary light source, a first optical component, a second optical component, an image plane, and an exit pupil. The first optical component transforms the primary light source into a plurality of secondary light sources that are imaged by the second optical component in the exit pupil. The first optical component includes a first optical element having a plurality of first raster elements that are imaged into the image plane, producing a plurality of images being superimposed at least partially on a field in the image plane. The second optical component comprises a first optical system that includes at least a third field mirror with positive optical power and a second optical system that includes at least a second field mirror with positive optical power.

Abstract: An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°.