Abstract: A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

Abstract: A projection objective of a microlithographic projection exposure apparatus has a wavefront correction device including a first refractive optical element and a second refractive optical element. The first refractive optical element includes a first optical material having, for an operating wavelength of the apparatus, an index of refraction that decreases with increasing temperature. The second refractive optical element includes a second optical material having, for an operating wavelength of the apparatus, an index of refraction that increases with increasing temperature. In a correction mode of the correction device, a first heating device produces a non-uniform and variable first temperature distribution in the first optical material, and a second heating device produces a non-uniform and variable second temperature distribution in the second optical material.

Abstract: A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

Abstract: An imaging optical system for microlithography is used to illuminate an object field. The illumination optical system has a first transmission optical system for guiding illumination light proceeding from a light source. An illumination presetting facet mirror with a plurality of illumination presetting facets is arranged downstream of the first transmission optical system. The illumination presetting facet mirror produces a preset illumination of the object field via an edge shape, which can be illuminated, of the illumination presetting facet mirror and individual tilting angles of the illumination presetting facets. An arrangement of the first transmission optical system and the illumination presetting facet mirror is such that telecentric illumination of the object field results.

Abstract: An optical component for transmitting radiation includes a radiation protective layer, which includes at least one oxide material selected from germanium dioxide (GeO2), antimony pentoxide (Sb2O5), aluminum oxide (Al2O3), niobium(V) oxide (Nb2O5), tin oxide (SnO2), metal oxides of rare earths, in particular lanthanum oxide (La2O3) or cerium oxide (CeO2), yttrium oxide (Y2O3), yttrium aluminum oxides, zinc oxide (ZnO), indium oxide (In2O3), bismuth trioxide (Bi2O3), barium titanate (BaTiO3) and spinels, such as magnesium aluminate (MgAl2O4). The radiation protective layer can be varnish-like, and the oxide material can be contained in a binder of the varnish-like radiation protective layer.

Abstract: The disclosure relates to an optical arrangement for three-dimensionally patterning a radiation-sensitive material layer, such as a projection exposure apparatus for microlithography. The optical arrangement includes a mask for forming a three-dimensional radiation pattern, a substrate with the radiation-sensitive material layer, and a projection optical unit for imaging the three-dimensional radiation pattern from the mask into the radiation-sensitive material layer. The optical arrangement is designed to compensate for spherical aberrations along the thickness direction of the radiation-sensitive material layer in order to generate a stigmatic image of the three-dimensional radiation pattern.

Abstract: An EUV light source for a projection exposure apparatus for EUV projection lithography includes a first electron beam device in the form of an electron beam supply device. The light source furthermore includes an EUV generation device supplied with an electron beam by the electron beam supply device. The light source furthermore includes a second electron beam device in the form of an electron beam disposal device which disposes of an electron beam in the beam path downstream of the EUV generation device. At least one of the electron beam devices on the one hand and the EUV generation device on the other hand are arranged in rooms which are situated one above the other and separated by a building ceiling. At least one electron beam passage is arranged in the building ceiling. This results in an electron beam-based EUV radiation source with the possibility of a manageable operational outlay.

Abstract: An imaging optical system includes a plurality of mirrors that image an object field in an object plane into an image field in an image plane. At least one of the mirrors is obscured, and thus has an opening for imaging light to pass through. The fourth-last mirror in the light path before the image field is not obscured and provides, with an outer edge of the optically effective reflection surface thereof, a central shadowing in a pupil plane of the imaging optical system. The distance between the fourth-last mirror and the last mirror along the optical axis is at least 10% of the distance between the object field and the image field. An intermediate image, which is closest to the image plane, is arranged between the last mirror and the image plane. The imaging optical system can have a numerical aperture of 0.9. These measures, not all of which must be effected simultaneously, lead to an imaging optical system with improved imaging properties and/or reduced production costs.

Abstract: A projection exposure system includes an illumination system configured to illuminate a mask with radiation. The projection exposure system also includes a projection objective configured to project an image of a pattern of the mask onto a radiation-sensitive substrate. The projection exposure system further includes an angle-selective filter arrangement arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle-selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function.

Abstract: A method is provided for producing a support structure including an at least partly reversibly deformable base body with a cut-out. A component can be held in the cut-out by friction. The method includes machining the base body in the braced state, wherein an opening is introduced into the base body and/or widened. The opening is deformed when the deformation force is removed such that the cut-out is formed. The opening is formed such that the application of a joining force makes it possible to deform the cut-out such that a component to be held can be introduced into the deformed cut-out with a clearance fit and an at least partial recovery of the deformed cut-out brings about a pressure contact between the held component and the cut-out in predefined circumferential regions.

Abstract: The invention relates to a microlithography projection lens for wavelengths <=248 nm <=, preferably <=193 mm, in particular EUV lithography for wavelengths ranging from 1-30 nm for imaging an object field in an object plane onto an image field in an image plane, the microlithography projection lens developed in such a manner that provision is made for an accessible diaphragm plane, into which for instance an iris diaphragm can be introduced.

Abstract: A method for adjusting an optical system in a microlithographic projection exposure apparatus includes establishing, for a given actual position of a polarization-influencing component, a distribution of IPS values in a pupil plane of the projection exposure apparatus. Each IPS value denotes the degree of realization of a predetermined polarization state for a light ray reflected at a respective mirror element of the mirror arrangement. The method also includes changing the position of the polarization-influencing component on the basis of the established distribution.

Abstract: Lithography apparatus and device manufacturing methods are disclosed in which means are provided for reducing the extent to which vibrations propagate between a first element of a projection system and a second element of a projection system. Approaches disclosed include the use of plural resilient members in series as part of a vibration isolation system, plural isolation frames for separately supporting first and second projection system frames, and modified connection positions for the interaction between the first and second projection system frames and the isolation frame(s).

Abstract: An optical arrangement in an optical system, such as a microlithographic projection exposure apparatus, includes: at least one heat-emitting subsystem which emits heat during the operation of the optical system; a first heat shield which is arranged such that it at least partly absorbs the heat emitted by the heat-emitting subsystem; a first cooling device which is in mechanical contact with the first heat shield and is designed to dissipate heat from the first heat shield; and a second heat shield which at least partly absorbs heat emitted by the first heat shield. The second heat shield is in mechanical contact with a cooling device that dissipates heat from the second heat shield.

Abstract: There is provided an optical element unit comprising an optical element, a connector element, and an optical element holder. The optical element has a plane of main extension as well as an outer circumference and defines a radial direction. The connector element connects the optical element and the optical element holder, the connector element having a first connector part connected to the optical element at the outer circumference and a second connector part connected to the optical element holder. The first connector part and the second connector part are connected via at least one coupling part, the coupling part being compliant in the radial direction and substantially preventing rotation between the first connector part and the second connector part in a plane substantially parallel to the plane of main extension.

Abstract: A catadioptric projection objective has a first objective part, defining a first part of the optical axis and imaging an object field to form a first real intermediate image. It also has a second, catadioptric objective part forming a second real intermediate image using the radiation from the first objective part. The second objective part has a concave mirror and defines a second part of the optical axis. A third objective part images the second real intermediate image into the image plane and defines a third part of the optical axis. Folding mirrors deflect the radiation from the object plane towards the concave mirror; and deflect the radiation from the concave mirror towards the image plane. The first part of the optical axis defined by the first objective part is laterally offset from and aligned parallel with the third part of the optical axis.

Abstract: An illumination and displacement device for a projection exposure apparatus comprises an illumination optical unit for illuminating an illumination field. An object holder serves for mounting an object in such a way that at least one part of the object can be arranged in the illumination field. An object holder drive serves for displacing the object during illumination in an object displacement direction. A correction device serves for the spatially resolved influencing of an intensity of the illumination at least of sections of the illumination field, wherein there is a spatial resolution of the influencing of the intensity of the illumination of the illumination field at least along the object displacement direction. This results in an illumination and displacement device in which field-dependent imaging aberrations which are present during the projection exposure do not undesirably affect a projection result.

Abstract: The disclosure relates to a method for modifying a polarization distribution in a microlithographic projection exposure apparatus, and to a microlithographic projection exposure apparatus. The projection exposure apparatus has an illumination device and a projection objective. The illumination device has an optical axis and a correction arrangement having a lambda/4 plate arranged rotatably about the optical axis and/or a lambda/2 plate arranged rotatably about the optical axis. The method includes determining a polarization distribution in a predetermined plane of the projection exposure apparatus, and rotating the lambda/4 plate and/or the lambda/2 plate about the optical axis so that a local variation of the polarization distribution is reduced after rotation in comparison with the state before the rotating.

Abstract: An illumination system is disclosed having a polarization member that includes first and second polarization modifiers movable into at least partial intersection with a radiation beam such that the respective polarization modifier applies a modified polarization to at least part of the beam. The illumination system further includes an array of individually controllable reflective elements positioned to receive the radiation beam after it has passed the polarization member, and a controller configured to control movement of the first and second polarization modifiers such that the first and second polarization modifiers intersect with different portions of the radiation beam.

Abstract: An optical module includes a chamber capable of being evacuated and a mirror in the chamber. The mirror includes a plurality of individual mirrors. Each individual mirror includes: a mirror body including a reflection face; a support structure; and a thermally conductive portion that mechanically connects the support structure to the mirror body. For at least one individual mirror, the thermally conductive portion includes a plurality of thermally conductive strips arranged radially, adjacent thermally conductive strips being separated from each other, and each of the plurality of thermally conductive strips connecting the mirror body to the support structure. For at least one individual mirror, an actuator is associated with the mirror body, the actuator being configured to displace the mirror body relative to the support structure in at least one degree of freedom.