Patents Assigned to CE CELL ENGINEERING GMBH
  • Patent number: 12389708
    Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which, in a treatment step, a treatment current flow having a current density of 200 A/cm2 to 20,000 A/cm2 in relation to the treatment section is induced while biasing and illuminating the silicon solar cell. The object of the invention is to improve the method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. In particular, it should be possible to quantify the improvement achieved by the method while implementing the method. Furthermore, any damage resulting from the application of unfavourable process parameters should be detected while the method is being implemented.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: August 12, 2025
    Assignees: CE CELL ENGINEERING GMBH, FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG EINGETRAGENER VEREIN
    Inventors: Hongming Zhao, Stefan Stöckel, Eckehard Hofmüller, Eve Krassowski, Marko Turek, Christian Hagendorf, Stephan Grosser
  • Patent number: 11784263
    Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance.
    Type: Grant
    Filed: September 20, 2022
    Date of Patent: October 10, 2023
    Assignee: CE CELL ENGINEERING GMBH
    Inventor: Hongming Zhao
  • Patent number: 11482630
    Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: October 25, 2022
    Assignee: CE CELL ENGINEERING GMBH
    Inventor: Hongming Zhao
  • Patent number: 11393944
    Abstract: The invention relates to a method for improving ohmic contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving contact behaviour between the contact grid and the emitter layer of silicon solar cells, which method is used after the contacting of these solar cells and thus reduces the scrap quota of solar cells with faulty contacting. In order to achieve this object, a method is proposed which has the following method steps. First a silicon solar cell (1) is provided with the emitter layer, the contact grid (5) and a back contact (3). Then the contact grid (5) is electrically contacted by a contact pin matrix (8) or contact plate connected to one terminal of a current source and the back contact (3) is electrically connected by a contact device connected to the other terminal of the current source.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: July 19, 2022
    Assignee: CE CELL ENGINEERING GMBH
    Inventor: Zhao Hongming