Abstract: A method for improving contact resistance of a multi-junction solar cell having a front and a back and multiple subcells, including: a) delivering the solar cell with front and back contacts in grid, strip or transparent form; b) contact-connecting one region of the back contact to a contact device connected to one pole of a voltage source, and the front contact or another region of the back contact, which is electrically insulated from the region, to another contact device, which is connected to the other pole of the voltage source; c) applying a voltage against the forward direction of the solar cell to the contacts, the voltage smaller than a solar cell breakdown voltage; d) guiding a point light source over the solar cell, a subregion of the front or back being illuminated, inducing current in the subregion, and illuminating the subregion with light beams of different wavelengths.

Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which, in a treatment step, a treatment current flow having a current density of 200 A/cm2 to 20,000 A/cm2 in relation to the treatment section is induced while biasing and illuminating the silicon solar cell. The object of the invention is to improve the method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. In particular, it should be possible to quantify the improvement achieved by the method while implementing the method. Furthermore, any damage resulting from the application of unfavourable process parameters should be detected while the method is being implemented.

Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance.

Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance.

Abstract: The invention relates to a method for improving ohmic contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving contact behaviour between the contact grid and the emitter layer of silicon solar cells, which method is used after the contacting of these solar cells and thus reduces the scrap quota of solar cells with faulty contacting. In order to achieve this object, a method is proposed which has the following method steps. First a silicon solar cell (1) is provided with the emitter layer, the contact grid (5) and a back contact (3). Then the contact grid (5) is electrically contacted by a contact pin matrix (8) or contact plate connected to one terminal of a current source and the back contact (3) is electrically connected by a contact device connected to the other terminal of the current source.