Abstract: Packaging processes and structures provide thin-film interconnects for high performance signal transmission of high frequency signals. The thin-film interconnects can be formed on a carrier that is at least partly removed for formation of terminals such as a BGA connected to the thin-film interconnects. Removal of the carrier can leave a frame for handling of the thin-film interconnects during subsequent processing. The thin film interconnects can be used to route signals to external terminals, between dies, or between functional units within a die. This allows the dies to contain fewer routing layers and allows configuration of a device such as an ASIC during packaging. A coarser pitch interconnect structure can be fabricated on the carrier using different technology for power and ground management and/or in a core that attaches to the thin-film package structure.

Abstract: A dam or barrier around the periphery of a die in a flip-chip package changes the shape of the underfill to reduce stress resulting from edge effects. The dam can include a treated region of a substrate having an affinity to an underfill material. The treated region causes liquid underfill material to bead, thereby controlling the wetting angle of the underfill material and shaping the underfill to eliminate sources of stress such as underfill fillet regions that are subject to significant shrinkage. The dammed underfill additionally avoids or reduces the extent of areas having thermal coefficients of expansion that differ from the optimal level because of low filler particle concentration.

Abstract: A flip-chip packaging method for a semiconductor device treats a portion of an interconnect substrate so that a fill material when liquid beads on the treated portion of the interconnect substrate. When the fill material is dispensed on the interconnect substrate to fill a gap under the semiconductor device, the beading of the fill material prevents formation of fillets that might otherwise create a variation in the thermal coefficient of expansion of fill material and/or warp the interconnect substrate. The treated portion of the interconnect substrate can be roughened or coated with a material that differs from other portions of the interconnect substrate and thereby causes beading.

Abstract: A flip-chip package uses a substrate having bond pad spacing that matches terminal spacing on a chip at an elevated temperature that is an expected operating temperature of the chip. The elevated temperature can be the midpoint of the desired temperature cycle of the chip so that deformations of the electrical connections in one direction balance deformations in the opposite direction during temperature cycling. Matching spacing at an elevated temperature, even a temperature less than the bonding temperature, permits a better alignment at the bonding temperature for formation of stronger bonds.

Abstract: A flip-chip package and packaging method use a substrate having bond pad spacing that matches terminal spacing on a chip at an elevated temperature, such as the temperature of the chip during bonding to the substrate, the melting point of solder used on the chip, a temperature within the range of thermal cycling of the chip, or an operating temperature of the chip. Matching spacing at an elevated temperature permits a better alignment at the bonding temperature for formation of stronger bonds.

Abstract: A process for fabricating a BGA flip chip package containing a stiffener or heat spreader monitors edges of the adhesive that attaches the stiffener or heat spreader. The monitoring ensures that the adhesive extends beyond the centers of the outermost solder balls in the BGA. Stress at the edge of the adhesive thus does not cause warping or variations within the BGA.

Abstract: A flip-chip package and packaging method use a substrate having bond pad spacing that matches terminal spacing on a chip at an elevated temperature, such as the temperature of the chip during bonding to the substrate, the melting point of solder used on the chip, a temperature within the range of thermal cycling of the chip, or an operating temperature of the chip. Matching spacing at an elevated temperature permits a better alignment at the bonding temperature for formation of stronger bonds.