Abstract: The present invention provides a process for industrial production of chiral-1,1-difluoro-2-propanol. More specifically, a microorganism having the activity to cause asymmetric reduction of 1,1-difluoroacetone or an enzyme having the same activity is allowed to act on 1,1-difluoroacetone, whereby chiral-1,1-difluoro-2-propanol can be produced with high optical purity and in good yield. The process for production of the present invention is easy for industrial implementation.

Abstract: A method for producing 1-chloro-3,3,3-trifluoropropene efficiently from an intermediate product having a low reactivity is provided. A method for producing trans-1-chloro-3,3,3-trifluoropropene comprising reacting a halogenated hydrocarbon compound having 3 carbon atoms represented by Formula (1) shown below in a gas phase with hydrogen fluoride in the presence of chlorine is provided. C3HXClYFZ (1) wherein X is 2 or 3; and when X=2, Y is an integer from 1 to 4, Z is an integer from 0 to 3, and Y+Z=4; and when X=3, Y is an integer from 1 to 5, Z is an integer from 0 to 4, and Y+Z=5; provided that Formula (1) shown above represents a halogenated hydrocarbon compound having 3 carbon atoms excluding trans-1-chloro-3,3,3-trifluoropropene.

Abstract: A dry etching method provided to involve the steps of: (a) disposing a substrate within a chamber, the substrate having an amorphous carbon film; (b) preparing a plasma gas by converting a dry etching agent into a plasma, the dry etching agent containing at least oxygen and alkylsilane; and (c) conducting plasma etching on the amorphous carbon film by using the plasma gas and an inorganic film as a mask.

Abstract: The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step.

Abstract: A method for improving preservation stability of 2,2-difluoroacetaldehyde according to the present invention include at least: a first step of forming a “2,2-difluoroacetaldehyde-alcohol composite system” in which a 2,2-difluoroacetaldehyde hemiacetal coexists with an excess alcohol, wherein the total molar amount of the alcohol is 1.15 to 4.00 times the total molar amount of 2,2-difluoroacetaldehyde; and a second step of storing, in a storage container, the “2,2-difluoroacetaldehyde-alcohol composite system” formed in the first step. It is possible by this method to suppress the conversion of the 2,2-difluoroacetaldehyde hemiacetal to a dimer and maintain the original aldehyde activity of the target compound with less composition change over a long term.

Abstract: A glass antenna provided on vehicle side glass has a power feeding portion disposed at side portion of the side glass, a main element connected to the power feeding portion and a square bracket-shaped element whose one end is connected to some midpoint of the main element. When frequency band of FM broadcast wave received by the antenna is divided into two frequency bands with respect to its center frequency, wavelength of center frequency of frequency band of low frequency is ?, and wavelength of center frequency of frequency band of high frequency. Also wavelength shortening coefficient of the side glass is ?. In this condition, either one of length of the main element or length from the power feeding portion up to an opening end of the square bracket-shaped element is set to ?·?·¾, and the other is set to ?·??·¾.

Abstract: A film-forming composition according to the present invention include fluororesin having a repeating unit of the general formula (1); and a fluorine-containing solvent. In the general formula (1), R1 each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R2 each independently represents C1-C15 straight, C3-C15 branched or C3-C15cyclic fluorine-containing hydrocarbon gr which any hydrogen atom may be replaced by a fluorine atom with the proviso that the repeating unit contains at least one fluorine atom. This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element because the composition can form a film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.

Abstract: What is disclosed is a lead-free glass, which is a V2O5—TeO2—RO (at least one selected from the group consisting of MgO, CaO, SrO, and BaO)—ZnO glass and has a low softening point, comprising: 5-55 wt % of V2O5, 5-75 wt % of TeO2, 1-25 wt % of RO (at least one selected from the group consisting of MgO, CaO, SrO, and BaO) in total, 0.1-6 wt % of ZnO, and 0.1-3 wt % of R2O (at least one selected from the group consisting of Li2O, Na2O, and K2O) in total. This glass can be used as a sealing material providing fluidity which is capable of being sealed at a temperature of 400° C.

Abstract: Disclosed is a lead-free glass, which is characterized by comprising 5-55 weight % of V2O5, 5-75 weight % of TeO2, 6-20 weight % of a total of RO (at least one selected from the group consisting of MgO, CaO, SrO and BaO) and 0.1-6 weight % of ZnO in a glass component, V2O5+TeO2+RO+ZnO being 70 weight % or greater. From this lead-free glass, a sealing material having fluidity which is capable of sealing at 400° C. or lower can be obtained.

Abstract: Provided is a method for converting thermal energy into mechanical energy by use of an organic rankine cycle system that accommodates a working fluid composition. The method includes sequentially performing: evaporating the working fluid composition; expanding the working fluid composition; condensing the working fluid composition; and transferring the working fluid composition, while raising a pressure thereof, by a pump. The working fluid composition contains cis-1,3,3,3-tetrafluoropropene at a ratio higher than or equal to 92.0% by mass and lower than or equal to 99.9% by mass and trans-1,3,3,3-tetrafluoropropene or 2,3,3,3-tetrafluoropropene at a ratio higher than or equal to 0.1% by mass and lower than or equal to 8.0% by mass; and has an evaporation temperature higher than or equal to 60° C. and lower than or equal to 150° C.

Abstract: Disclosed are a diamine represented by the following formula, a polyimide and a polyamide using the same as the raw material, a cyclized product thereof, and a method for producing the same. In the formula, A represents a single bond, an ether bond, a sulfide bond, CO, CH2, SO, SO2, C(CH3)2, NHCO or C(CF3)2, or a bivalent group having an aliphatic ring, a hetero ring or an aromatic ring, R1 represents a C1-4alkyl group or a halogen group, and each of “a” and “b” independently represents an integer of 0-2, and 1?a+b?4. The polyimide and the polyamide are a fluorescent polyimide and a fluorescent polyamide that are easily soluble in organic solvents to the extent that they can be formed into a film by a wet process when making an optical device, that have heat resistance and strength when formed into a film, and that have superior fluorescent characteristics.

Abstract: A positive photosensitive resin composition according to the present invention contains at least (A) a polysiloxane compound having at least a structural unit of the general formula (1), (B) a photoacid generator or quinone diazide compound and (C) a solvent [(RX)bR1mSiOn/2]??(1) where RX represents the following group; R1 each represents a hydrogen atom, C1-C3 alkyl group, phenyl group, hydroxy group, C1-C3 alkoxy group or C1-C3 fluoroalkyl group; b represents an integer of 1 to 3; m represents an integer of 0 to 2; n represents an integer of 1 to 3; and b, m and n satisfy b+m+n=4, where X each represents a hydrogen atom or acid labile group; and a represents an integer of 1 to 5. It is possible by the use of this positive photosensitive resin composition to provide a film with high resistance and heat-resistant transparency and provide an electronic component with such a film.

Abstract: A production method of ?,?-difluoroacetaldehyde according to the present invention includes reaction of an ?,?-difluoroacetic acid ester with hydrogen gas (H2) in the presence of a ruthenium catalyst. It is possible to selectively obtain ?,?-difluoroacetaldehyde as a partially reduced product of the hydrogenation reaction by the adoption of specific reaction conditions (in particular, reaction solvent and reaction temperature). This hydrogenation process can be alternative to the industrially unpractical hydride reduction process.

Abstract: Disclosed is an antifogging film-forming material obtained by reacting, in the presence of a quaternary ammonium salt or quaternary phosphonium salt, a copolymer represented by a certain general formula with a multifunctional epoxy compound having a solubility of 40-100 mass % in 25° C. water. The antifogging film-forming material is characterized by having a weight average molecular weight of 100,000-5,000,000. With this material, it becomes possible to obtain an antifogging article excellent in antifogging property, heat resistance, chemical resistance and abrasion resistance.

Abstract: According to one aspect of the present invention, there is provided a curable resin composition including at least: a polysiloxane compound having, in a molecule thereof, at least two functional groups selected from the group consisting of silanol groups and alkoxysilyl groups as a component (A-1); and silica whose extract water has a pH of 6.1 or lower at 25° C. as a component (B), wherein the amount of the component (B) relative to the total amount of the components (A-1) and (B) is in a range of 70 to 97 mass %. This curable resin composition is able to, even when formed into various shapes and sizes, prevent foaming during curing and thus is suitable as an encapsulant material for a semiconductor element.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Abstract: Disclosed is a dry etching method for a laminated film in which at least one silicon layer and at least one silicon oxide layer are laminated together. The dry etching method includes generating a plasma gas from a dry etching agent and etching the laminated film with the plasma gas under the application of a bias voltage. The dry etching agent contains an unsaturated hydrofluorocarbon represented by the following formula: C3HxFy where x is an integer of 1 to 5; y is an integer of 1 to 5; and x and y satisfy a relationship of x+y=4 or 6, and iodine heptafluoride. The volume of the iodine heptafluoride in the dry etching agent is 0.1 to 1.0 times the volume of the unsaturated hydrofluorocarbon in the dry etching agent.

Abstract: To provide a material suitable for a nonaqueous electrolyte battery having high-temperature durability. An ionic complex of the present invention is represented by any of the following formulae (1) to (3). For example, in the formula (1), A is a metal ion, a proton, or an onium ion; M is any of groups 13 to 15 elements. R1 represents a C1 to C10 hydrocarbon group which may have a ring, a heteroatom, or a halogen atom, or —N(R2)—. R2 at this time represents hydrogen atom, alkali metal atom, a C1 to C10 hydrocarbon group which may have a ring, a heteroatom, or a halogen atom. R2 can also have a branched chain or a ring structure when the number of carbon atoms is 3 or more. Y is carbon atom or sulfur atom. a, o, n, p, q, and r are each predetermined integers.

Abstract: Disclosed is a gas generation device 100 that has a mist trap 50a equipped with a tubular housing 51, a gas inlet port 52 for allowing the gas generated from an electrolytic cell, a gas outlet port 53 for allowing the gas to flow out of the housing, a filler receiving section 58 that is positioned between the gas inlet port 52 and the gas outlet port 53 and receives a filler 56 for adsorbing mist and microparticles, and a gas diffusion section 57 that is positioned between the gas inlet port 52 and the filler receiving section 58 and is for diffusing the gas generated from the electrolytic cell 1 through the housing 51, that the gas outlet port 53 has a gas inlet tube 55 connecting to the interior of the housing 51, and that a gas entry portion 59 of the gas inlet tube 55 is arranged so as to be embedded in the filler 56 received in the filler receiving section 58.

Abstract: Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4?a?b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4?g?h?w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.