Abstract: An apparatus for determining the temperature of a substrate, in particular of a semiconductor wafer during a heating thereof by means of a first radiation source is described. Furthermore, an apparatus and a method for thermally treating substrates are described, in which the substrate is heated by means of at least one first radiation source. The apparatus comprises a first grating structure having grating lines, which are opaque with respect to a substantial portion of the radiation of the first radiation source, wherein the grating structure is arranged between the first radiation source and the substrate, and a drive unit for moving the first grating structure.

Abstract: An apparatus for determining the temperature of a substrate, in particular of a semiconductor wafer during a heating thereof by means of a first radiation source is described. Furthermore, an apparatus and a method for thermally treating substrates are described, in which the substrate is heated by means of at least one first radiation source. The apparatus comprises a first grating structure having grating lines, which are opaque with respect to a substantial portion of the radiation of the first radiation source, wherein the grating structure is arranged between the first radiation source and the substrate, and a drive unit for moving the first grating structure.

Abstract: A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.

Abstract: A cooling module for cooling substrates, in particular solar cells having a paste printed thereon after passing through a heating module is described. The cooling module comprises an elongated cooling chamber having an inlet opening, which is adjacent to a heating module, and an outlet opening, as well as a transport unit for transporting substrates through the elongated cooling chamber, wherein the transport unit defines a transport plane for the substrates. At least one first cooling unit is provided. The cooling unit has a plurality of first plate elements, which are arranged in substance perpendicular to and above the transport plane in the cooling chamber, at least one first conduit which extends through the first plate elements and is in a thermally conducting relationship therewith, and at least one conveying unit for conveying a cooling fluid through the first conduit.

Abstract: A connector for gas or liquid lines has a core piece with a core and a sleeve piece with a sleeve. A pressure space surrounds the core and the sleeve when the two are connected to one another. The pressure space is set at an overpressure with respect to a line space of the connector. The connector is useful, for example, in connecting a diffusion tube of a low-pressure diffusion furnace to a gas outlet lance.

Abstract: An arrangement for the contactless transport of flat substrates, particularly of square or rectangular plates having high breakability along a transport path, is provided. With the arrangement, the substrates can be reliably accelerated, transported and slowed down even in the overhead position, independently from the ambient atmosphere and ambient temperature. This is achieved by a plurality of Bernoulli grippers being arranged on both sides along a transport path at a distance behind each other such that the substrate to be transported covers the Bernoulli grippers on both sides of the transport path only partially. The Bernoulli grippers each create a gas flow rotating clockwise or counterclockwise relative to the substrate and directed in the transport direction, wherein the Bernoulli grippers of each pair create each a differently rotating gas flow. Mechanical lateral guide elements are provided on both sides of the transport path.

Abstract: A method for controlling process gas concentration for treatment of substrates in a process space in which a medium is evaporated in a bubbler by bubbles of a carrier gas passed through the medium is achieved by producing a stipulated constant internal pressure in the bubbler and subsequent introduction of the carrier gas into the bubbler with simultaneous temperature control of the medium being evaporated within the bubbler to set a stipulated vapor pressure.

Abstract: To provide a method and an arrangement for heat treatment of substrates which allow continuously adjustable cooling rates over a wide temperature range with simultaneously largely homogeneous temperature distribution over the area of the heating/cooling plate, a cooling/heating plate is provided containing a multiplicity of cooling/heating pipes running parallel to one another. Each cooling/heating pipe comprises an outer pipe, an inner pipe which can carry a flow, and an interspace between them which can carry a flow. Each inner pipe is connected to a supply line for water and each interspace is connected to a supply line for air, with water and air being routed simultaneously though the cooling/heating plate.