Patents Assigned to Cenymer Corporation
  • Material and method for manufacturing semiconductor on insulator substrates and devices
    Patent number: 6720620
    Abstract: A semiconductor device is formed from a semiconductor on insulator substrate, with the insulator or dielectric layer being formed from a polymer precursor to ceramic. The polymer precursor to ceramic may be SiC, diamond, or diamond-like carbon. The resulting device has improved thermal properties, smoothness, dielectric properties, ease of processing, and performance. A method of making the semiconductor device is also disclosed.
    Type: Grant
    Filed: April 14, 2003
    Date of Patent: April 13, 2004
    Assignee: Cenymer Corporation
    Inventors: Charles Partee, Scott Joray