Abstract: The present invention provides methods of reducing particle contamination during wet processing of semiconductor substrates. In one embodiment of the present invention, a surfactant is added to any processing solution having a gas-liquid interface that the semiconductor substrates will be contacted with during immersion. The surfactant reduces the contact angle of the processing solution to less than 90° and inhibits deposition of particles onto the semiconductor substrates during immersion. In a preferred embodiment of the present invention, the semiconductor substrates are contacted with only one gas-liquid interface during wet processing that occurs during the immersion of the semiconductor substrates in an initial liquid processing solution. In this embodiment, the last processing solution in contact with the semiconductor substrates is removed by displacement with a drying fluid stream.

Abstract: The present invention is directed to wet processing methods for the manufacture of electronic component precursors, such as semiconductor wafers used in integrated circuits. The electronic component precursors are placed in a reaction chamber and contacted with at least one reactive chemical process fluid for a selected period of time. The reactive process fluid can be, for example, hydrofluoric acid. The electronic component precursors are then exposed directly to a drying fluid, with no intervening rinsing fluid, for a selected period of time. The drying fluid can be a vapor.

Abstract: The present invention relates to a pressure relief device and method of using the same. The pressure relief device includes a rupture element containing an inner layer made of an nonferrous-based composition that can preferably withstand contact with corrosive fluids. The inner layer of the rupture element is preferably the only part of the rupture element that is exposed to fluid in the system where it is installed. The pressure relief device may be installed in any system where overpressurization or underpressurization protection is desired. For example, the pressure relief device may be installed in systems where corrosive fluids are used and where an ultraclean environment is needed.

Abstract: An object is treated by contacting it with an organic solvent and then removing the organic solvent by directly displacing it with a fluid comprising a drying vapor (e.g., isopropyl alcohol or IPA vapor) such that substantially no liquid droplets of organic solvent are left on the surfaces of the object to evaporate after the direct displacement of the organic solvent with the fluid.

Abstract: The present invention provides systems and methods of determining the concentration of chemicals in a wet processing stream where the wet processing stream is formed from two or more liquid streams having known chemical concentrations. The concentration of chemicals in the wet processing stream are monitored by measuring the flow rates of the liquid streams during combination to form the wet processing stream, and calculating the concentrations of chemicals in the wet processing stream based on the flow rates and known chemical concentrations of the liquid streams. The present invention also provides systems and methods for controlling the wet processing of semiconductor substrates using the calculated concentrations in the wet processing stream. The methods and systems of the present invention are particularly useful when the semiconductor substrates are contacted with the wet processing stream in a single pass.

Abstract: The present invention is directed to wet processing methods for the manufacture of electronic component precursors, such as semiconductor wafers used in integrated circuits. More specifically, this invention relates to methods of manufacturing electronic component precursors using liquids of varying temperature.

Abstract: The present invention provides methods of electrolessly depositing metal onto the surfaces of electronic components using an enclosable single vessel. The methods of the present invention include contacting the electronic components with an activation solution followed by contacting the electronic components with a metal deposition solution. In a preferred embodiment of the present invention, the oxygen levels in the activation solution and metal deposition solution are controlled in a manner for improved processing results. In another preferred embodiment of the present invention, the activation and metal deposition solutions are used one time without reuse.

Abstract: An object is treated by contacting it with an organic solvent and then removing the organic solvent by directly displacing it with a fluid comprising a drying vapor (e.g., isopropyl alcohol or IPA vapor) such that substantially no liquid droplets of organic solvent or drying vapor are left on the surfaces of the object to evaporate after the direct displacement of the organic solvent with the fluid.

Abstract: The present invention is directed to wet processing methods for the manufacture of electronic component precursors, such as semiconductor wafers used in integrated circuits. More specifically, this invention relates to methods, for example, prediffusion cleaning, stripping, and etching of electronic component precursors using sequential chemical processing techniques.

Abstract: The present invention provides methods for efficiently cleaning semiconductor wafers, and particularly for removing photoresist material from the surfaces of semiconductor wafers, using a mixture of sulfuric acid and hydrogen peroxide. In accordance with the present invention, an initial sulfuric acid-based photoresist stripping bath, either being pure sulfuric acid or a sulfuric acid:hydrogen peroxide mixture with a ratio of at least 15:0.3, based on the anhydrous chemical substances, is prepared for processing an initial batch of wafers. During the processing of the semiconductor wafers, hydrogen peroxide is added to the bath solution at a controlled rate of between about 0.015-1.5 g H.sub.2 O.sub.2 (anhydrous basis)/min./liter of photoresist bath solution. In such a way, the conversion of hydrogen peroxide to Caro's acid is optimized resulting in an extended bath life and conservation of hydrogen peroxide.

Abstract: The present invention presents methods for, inter alia, cleaning and etching semiconductor wafers with a solution containing ammonium fluoride and control of the process used for preparing such a solution at its point of use.

Abstract: A static megasonic cleaning system for cleaning multiple objects having an exterior surface includes a cassetteless vessel having an internal cavity for receiving the multiple objects and an array of megasonic transducers mounted on the vessel. Each transducer emits a focused beam of megasonic energy into the cavity and is arranged so that the emitted beams from all of the transducers collectively envelop the entire exterior surface of the objects. The transducers are staggered to avoid internal mounting structure within the vessel and avoid unnecessary dissipation of the megasonic energy.