Patents Assigned to Chambre de Commerce et d'Industrie de Paris (ESIEE PARIS)
  • Method for manufacturing a flexible intraocular retinal implant having doped diamond electrodes
    Patent number: 8801942
    Abstract: A method for manufacturing an intraocular retinal implant including: providing a mold capable of supporting growth of a layer of doped diamond, the mold including, on one face, elements all depressed or all projecting with respect to the surface of the face, and constituting a pattern cavity for the electrodes of the implant which it is desired to obtain; producing the doped diamond electrodes by growing a layer of doped diamond in all or part of a space occupied by the pattern cavity elements; forming a first insulating layer on the face of the mold including the pattern cavity; producing interconnection lines by depositing an electrically conductive material at least in spaces not covered by the first insulating layer; forming a second insulating layer on the mold face including the pattern cavity, the second layer covering the interconnection lines, the first and second insulating layers forming a flexible plate of the implant; removing the mold.
    Type: Grant
    Filed: June 8, 2011
    Date of Patent: August 12, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Chambre de Commerce et d'Industrie de Paris (ESIEE Paris)
    Inventors: Emmanuel Scorsone, Philippe Bergonzo, Gaelle Lissorgues, Lionel Rousseau, Michel Bonnauron, Christine Alice Regine Helene Terrades, Serge Anne Daniel Bonnauron, Lucas Claude Jean Francois Bonnauron, Tanguy Richard Yves Bonnauron
  • METHOD FOR MANUFACTURING A FLEXIBLE INTRAOCULAR RETINAL IMPLANT HAVING DOPED DIAMOND ELECTRODES
    Publication number: 20130228547
    Abstract: A method for manufacturing an intraocular retinal implant including: providing a mold capable of supporting growth of a layer of doped diamond, the mold including, on one face, elements all depressed or all projecting with respect to the surface of the face, and constituting a pattern cavity for the electrodes of the implant which it is desired to obtain; producing the doped diamond electrodes by growing a layer of doped diamond in all or part of a space occupied by the pattern cavity elements; forming a first insulating layer on the face of the mold including the pattern cavity; producing interconnection lines by depositing an electrically conductive material at least in spaces not covered by the first insulating layer; forming a second insulating layer on the mold face including the pattern cavity, the second layer covering the interconnection lines, the first and second insulating layers forming a flexible plate of the implant; removing the mold.
    Type: Application
    Filed: June 8, 2011
    Publication date: September 5, 2013
    Applicants: Chambre de Commerce et d'Industrie de Paris (ESIEE PARIS), Commissariat a l'energie atomeique et aux energies alternatives
    Inventors: Emmanuel Scorsone, Philippe Bergonzo, Mathias Bonnauron