Abstract: A device for measuring changes in the relative height or depth of microscopic surface features of a sample that allows crater depth measurements to be made while depth profile analyses are proceeding is provided. The depth monitor comprises a dual beam optical interferometer, that is preferably adapted for use with analytical instruments, such as SIMS, XPS, ESCA, and AES instruments. The monitor provides substantially accurate depth measurements and a continuous readout for monitoring the sputter rate of an ion beam etch in real time, for correcting for any variations in the sputter rate as craters are formed in the sample. The invention also allows integration of real time depth measurements into data collecting software to eliminate the assumption that the material comprising the sample has the same sputter rate as a reference material. The in situ depth measurements provided by the invention are more accurate than prior art crater depth analysis and reduce processing times.

Abstract: Neutron activation analysis method and apparatus are disclosed wherein a sample in a vacuum chamber is irradiated with neutrons, the time when and energy of emitted gamma rays from a sample are detected, and delayed Beta-electrons emitted from the sample are detected and the positions of emission are imaged. Time coincidence between detected gamma rays and delayed Beta-electrons is determined and the location of elements on the sample is established from the detected coincidence and the image of the location on the sample where the delayed Beta-electrons were emitted.

Abstract: Method and apparatus for monitoring and maintaining the geometry of plasma in a plasma chamber is disclosed wherein the plasma density and plasma temperature in the chamber are monitored to calculate an initial sample dc voltage which is applied to the sample or first probe in or adjacent to the temperature. The current to the sample or first probe is then measured, a new sample voltage for the sample or first probe is then calculated and applied and these latter steps of measuring, calculating and applying are repeated. Different wire and flat probe structures and positions are disclosed.

Abstract: A time-of-flight analyzer, such as a secondary ion surface analyzer, and method are disclosed wherein a beam of charged particles is created, magnified, directed along a path to a detector, detected and the time of flight measured. An emission lens is positioned on the path to produce the magnification and an additional lens can be provided along the path to produce variable magnification. A field aperture along the path limits the size of the image and a contrast diaphragm limits the lateral ion velocity. Two or more, preferably three, particle steering analyzers are sequentially positioned along the path from the emission lens to the detector with each of the three analyzers steering the particles through substantially 90 degrees.