Abstract: A heat treatment apparatus for high-quality graphene synthesis comprises an upper roll chamber, a deposition chamber connected to the upper roll chamber to deposit graphene on a catalytic metal film, and a lower roll chamber mounted on a lower portion of the deposition chamber. The upper roll chamber includes a supply roller and the lower roll chamber includes a lower direction shifting roller shifting a direction of the catalytic metal film supplied from the supply roller. In the deposition chamber, a catalytic metal film at a supply side transferred from the supply roller to the lower direction shifting roller and a catalytic metal film at a discharge side transferred from the lower direction shifting roller to a winding roller are passed, and a heater portion is mounted around the catalytic metal film at the supply side and the catalytic metal film at the discharge side.
Abstract: Disclosed herein is a plane heater that generates heat by using graphene or the like as the conductive heat generation material thereof. The plane heater includes: a nonconductor substrate; a heat generation material applied to the nonconductor substrate; and a pair of electrodes configured to generate resistance heat in the heat generation material. The pair of electrodes include a first electrode configured to be connected to one pole of a power source, and a second electrode configured to be connected to the other pole of the power source. The sectional areas of at least some portions of the first electrode and the second electrode are determined such that a plurality of electric circuits formed by the first electrode, the heat generation material, and the second electrode can have the theoretically same resistance.
Abstract: The present invention relates to a heat treatment apparatus for high-quality graphene synthesis, and more particularly, to a heat treatment apparatus for high-quality graphene synthesis capable of more effectively depositing graphene on a catalytic metal film.
Abstract: A method for transferring graphene according to an exemplary embodiment of the present invention includes a process of transferring graphene of a metal sheet onto a thermal release film in each vacuum chamber and a process of transferring the graphene of the thermal release film onto a base material substrate. According to the method for transferring graphene, adhesion is increased by removing bubbles or foreign substances at the time of transferring the graphene to prevent separation of the graphene at the time of etching a metal substrate and enhance an adhesive quality state of the graphene on a target substrate.