Abstract: Disclosed is a method of manufacturing a semiconductor device that includes securing a lower surface of a wafer to a supporting surface of a carrier substrate formed of copper or other metal having good thermal conductance. Further semiconductor processing for packaging can include forming an RDL on the wafer, etching scribe channels through the wafer, and coating the wafer with encapsulant. After dicing, the metal carrier remains in contact with and supporting the lower surface of the wafer, and the remainder of the wafer remains coated by the encapsulant.

Abstract: Disclosed is an adhesive composition for temporarily bonding a semiconductor workpiece and support carrier pair with improved adhesive film properties. The adhesive composition may include one or more polymer resins, solvents, and a small but critical quantity of surfactants, among others. In operation, the one or more surfactants may improve film continuity, leveling, and reduce voids and defects. Sample semiconductor workpiece includes a semiconductor silicon wafer and sample support carrier includes rigid semiconductor silicon or glass, sapphire or other rigid materials.

Abstract: Disclosed is a thin subject assisted debonding method for separating temporarily bonded workpiece-carrier pair. The thin subject can be a thin wire, or thin filament, or thin blade. The thin subject can be applied between the workpiece and carrier pair in association with laser debonding or mechanical debonding to provide well controlled and targeted wedging function to the delaminating temporary adhesive and its adjacent substrate to which it is separating from. The workpiece can be a semiconductor wafer that has been thinned and processed, and the carrier can be a semiconductor non-device wafer or any other rigid substrate such as a glass wafer or panel. The application of a thin subject between the workpiece and carrier during debonding provides the advantage of high throughput and low defect rate.

Abstract: Disclosed is a method of manufacturing a semiconductor device that includes securing a lower surface of a wafer to a supporting surface of a carrier substrate formed of copper or other metal having good thermal conductance. Further semiconductor processing for packaging can include forming an RDL on the wafer, etching scribe channels through the wafer, and coating the wafer with encapsulant. After dicing, the metal carrier remains in contact with and supporting the lower surface of the wafer, and the remainder of the wafer remains coated by the encapsulant.

Abstract: Disclosed is a method of manufacturing a semiconductor device that includes adhering a plurality of semiconductor substrates and a framing member to a supporting surface of a carrier substrate. The semiconductor substrates can be wafers that can be diced or cut into a plurality of dies. Thus, the wafers each have respective active surfaces and at least one respective integrated circuit region. The method can further include encapsulating the framing member and the plurality of semiconductor substrates within an encapsulant. Subsequently, the carrier substrate is removed and a redistribution layer (RDL) is formed on the semiconductor substrates and the framing member.