Abstract: A fabrication method of three-dimensional programmable memory includes: 1) forming a base structure; 2) trenching the base structure; 3) setting the preset memory structure layer by layer onto the inner wall of strip trench; 4) filling the core medium in the cavity of the strip trench to form core medium layer; 5) setting the isolation trenches and isolation trench holes to isolate the left-right fingers and memory units, respectively, where the isolation trenches encroach at least one memory medium layer at the strip trench, and form a curve by connecting with the strip trenches from end to end. The isolation holes are set at the strip trenches to divide the strip into at least three independent memory bodies and encroach the medium layers of the base structure near the long sides of the strip trenches; and 6) filling the isolation trenches and holes with insulating medium.