Patents Assigned to Chengdu Sino Microelectronics Technology Co.,Ltd.
  • Patent number: 11764732
    Abstract: A high-speed high-linearity time-interleaved dynamic operational amplifier circuit includes a first current channel and a second current channel. The first current channel includes a first MOS transistor, a second MOS transistor and a third MOS transistor which are sequentially connected in series between a high level and a ground level. The first MOS transistor and the second MOS transistor have opposite conductivity types. A control end of the first MOS transistor is connected to a control end of the second MOS transistor. The second current channel includes a fourth MOS transistor, a fifth MOS transistor and a sixth MOS transistor which are sequentially connected in series between the high level and the ground level. The fourth MOS transistor and the fifth MOS transistor have opposite conductivity types. A control end of the fourth MOS transistor is connected to a control end of the fifth MOS transistor.
    Type: Grant
    Filed: July 28, 2021
    Date of Patent: September 19, 2023
    Assignee: CHENGDU SINO MICROELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Feixiang Xiang, Yuanjun Cen
  • Publication number: 20230268898
    Abstract: A high-linearity dynamic amplifier includes a first differential branch and a second differential branch. The first differential branch includes a first MOS transistor and a second MOS transistor which are connected between a high-level terminal and a ground-level terminal in series. A connection point of the first MOS transistor and the second MOS transistor is a second output terminal. The second differential branch includes a third MOS transistor and a fourth MOS transistor which are connected between the high-level terminal and the ground-level terminal in series. A connection point of the third MOS transistor and the fourth MOS transistor is a first output terminal. A grid terminal of the second MOS transistor is connected to a drain terminal of the fourth MOS transistor. A grid terminal of the fourth MOS transistor is connected to a drain terminal of the second MOS transistor.
    Type: Application
    Filed: February 15, 2023
    Publication date: August 24, 2023
    Applicant: Chengdu Sino Microelectronics Technology Co.,Ltd.
    Inventor: Jinda YANG
  • Patent number: 11581893
    Abstract: A high-frequency high-linear input buffer includes a first MOS transistor, a second MOS transistor, a third MOS transistor, and a signal panning unit. A gate terminal of the first MOS transistor is used as an input terminal of the buffer. A current input terminal of the first MOS transistor is connected to a current output terminal of the second MOS transistor. A current output terminal of the first MOS transistor is connected to a current input terminal of the third MOS transistor. A current input terminal of the second MOS transistor is connected to a gate terminal of the third MOS transistor. An input terminal of the signal panning unit is connected to an input terminal of the buffer. An output terminal of the signal panning unit is connected to a gate terminal of the second MOS transistor. An output terminal of the third MOS transistor is connected to ground.
    Type: Grant
    Filed: August 11, 2021
    Date of Patent: February 14, 2023
    Assignee: Chengdu Sino Microelectronics Technology Co., Ltd.
    Inventors: Jinda Yang, Yuanjun Cen, Jian Luo
  • Publication number: 20220345433
    Abstract: A data transmission circuit includes a data sending module and a data receiving module. The data sending module includes a message identification unit, used for sending messages to corresponding encapsulation units according to a priority of message data to be sent; a low-priority message encapsulation unit, used for slicing low-priority messages, encapsulating message slices respectively to form low-priority message slice packets, and then sending the low-priority message slice packets to a low-priority sending queue; a high-priority message encapsulation unit, used for encapsulating high-priority messages to form high-priority message packets and then sending the high-priority message packets to a high-priority sending queue; and a message sending unit, used for sending message packets in the high-priority sending queue and the low-priority sending queue, and preferentially processing the high-priority sending queue.
    Type: Application
    Filed: April 21, 2022
    Publication date: October 27, 2022
    Applicant: Chengdu Sino Microelectronics Technology Co.,Ltd.
    Inventors: Guo LI, Yuanjun CEN, Can HU, Wenyu ZANG, Xiuhua XIE
  • Publication number: 20220131543
    Abstract: A high-frequency high-linear input buffer includes a first MOS transistor, a second MOS transistor, a third MOS transistor, and a signal panning unit. A gate terminal of the first MOS transistor is used as an input terminal of the buffer. A current input terminal of the first MOS transistor is connected to a current output terminal of the second MOS transistor. A current output terminal of the first MOS transistor is connected to a current input terminal of the third MOS transistor. A current input terminal of the second MOS transistor is connected to a gate terminal of the third MOS transistor. An input terminal of the signal panning unit is connected to an input terminal of the buffer. An output terminal of the signal panning unit is connected to a gate terminal of the second MOS transistor. An output terminal of the third MOS transistor is connected to ground.
    Type: Application
    Filed: August 11, 2021
    Publication date: April 28, 2022
    Applicant: Chengdu Sino Microelectronics Technology Co.,Ltd.
    Inventors: Jinda YANG, Yuanjun CEN, Jian LUO
  • Publication number: 20220131502
    Abstract: A high-speed high-linearity time-interleaved dynamic operational amplifier circuit includes a first current channel and a second current channel. The first current channel includes a first MOS transistor, a second MOS transistor and a third MOS transistor which are sequentially connected in series between a high level and a ground level. The first MOS transistor and the second MOS transistor have opposite conductivity types. A control end of the first MOS transistor is connected to a control end of the second MOS transistor. The second current channel includes a fourth MOS transistor, a fifth MOS transistor and a sixth MOS transistor which are sequentially connected in series between the high level and the ground level. The fourth MOS transistor and the fifth MOS transistor have opposite conductivity types. A control end of the fourth MOS transistor is connected to a control end of the fifth MOS transistor.
    Type: Application
    Filed: July 28, 2021
    Publication date: April 28, 2022
    Applicant: Chengdu Sino Microelectronics Technology Co.,Ltd.
    Inventors: Feixiang XIANG, Yuanjun CEN