Abstract: A liquid crystal display mainly includes a first substrate and a second substrate processed for vertical alignment; a liquid crystal having a negative dielectric constant anisotropy and being sandwiched between the first and second substrates; an array of protrusions arranged in parallel to one another on the first substrate; and an array of slits provided on the pixel electrodes. The second substrate is provided with a plurality of gate lines, a plurality of data lines and a plurality of pixel electrodes. The pixel electrodes have first edges parallel to the gate lines and second edges parallel to the data lines. The protrusions have branches formed at positions facing the second edges of the pixel electrode in a manner that the angle included between the branches of the protrusions and the slits is kept at most 45 degrees.

Abstract: The present invention discloses a method for driving a tin film transistor, and more particularly, a method for driving a thin film transistor of a liquid crystal display. Voltage for driving a gate is changed such that peak values of the gate pulse voltage in positive field periodic scanning time and negative field periodic scanning time are not equal, and the difference therebetween is not larger than double of voltage peak value of a data signal line. Therefore, voltage reduction of liquid crystal capacitor can be decreased without enlarging the capacitance thereof. Further, since the gate voltage applied is smaller in a half of each period, the thin film transistor of the liquid crystal display is less influenced by an electric field and thus the voltage stress is reduced.

Abstract: A method of forming a TFT-LCD with self-aligned transparent conducting layer over a substrate comprises the following steps. Initially, a first metal layer is formed on the substrate. Then, an insulating layer is formed on the substrate. A silicon layer is formed above the insulator layer. A doped silicon layer is formed above the silicon layer. A second metal layer is formed on the doped silicon layer, the silicon layer, and the substrate to define S/D structures and data lines. Then, a passivation layer is formed on the second metal layer, the silicon layer, and the insulating layer. A transparent conducting layer is formed on the passivation layer. Then, a negative photoresist is formed on the transparent conducting layer. A front-side exposure step is performed by using a first photomask. Additionally, a back-side exposure step is performed by using the first metal layer and the second metal layer as a mask.