Abstract: A method for growing epitaxy is disclosed, which includes providing a mold; providing a substrate which is disposed in the mold; providing a solvent and a solute, and liquefying the solvent to allow the solute melted therein so as to form a melting solution between the substrate and the mold; and forming a first epitaxial layer on the substrate, wherein the first epitaxy is formed on the substrate by a temperature gradient of the melting solution melting the mold and the substrate.