Abstract: The invention relates to a method for producing a N-substituted amine compound by catalyzed alkylation. The method uses amine and alcohol or two kinds of amines as the reaction materials, employs composite metal oxides catalyst at a reaction temperature of 80-180° C. to catalyze the reaction for 6-36 hours, so as to produce the N-substituted amine compound. The reaction condition of the method of the invention is relatively moderate, using a catalyst made of cheap non-noble metals, which is non-caustic and easy to be separated and reused. The reaction does not need any medium and has relatively high conversion rate and selectivity.

Abstract: An IBTL system having a low GHG footprint for converting biomass to liquid fuels in which a biomass feed is converted to liquids by direct liquefaction and the liquids are upgraded to produce premium fuels. Biomass residues from the direct liquefaction, and optionally additional biomass is pyrolyzed to produce structured biochar, hydrogen for the liquefaction and upgrading, and CO2 for conversion to algae, including blue green algae (cyanobacteria) in a photobioreactor (PBR). Produced algae and diazotrophic microorganisms are used to produce a biofertilizer that also contains structured biochar. The structured biochar acts as a nucleation agent for the algae in the PBR, as a absorption agent to absorb inorganics from the biomass feed to direct liquefaction or from the liquids produced thereby, and as a water retention agent in the biofertilizer.

Abstract: A method for improving insect resistance of plants, in which dsRNA of insect's gene is expressed in plants by using transgenic technique, and then the interfering RNAs are formed in the plants. The interfering RNAs then enter into insects' bodies after being ingested by the insect that eats the plant, and conduct RNA interference against the target gene, thereby expression of the target gene is suppressed by RNA interference. A new plant-mediated method for improving insect resistance by suppressing the growth of insects by RNA interference mechanism.

Abstract: The present application discloses a semiconductor Field-Effect Transistor (FET) structure and a method for manufacturing the same, wherein the method comprises: forming a semiconductor substrate comprising an SOI structure having a body-contact hole; forming a fin on the SOI structure of the semiconductor substrate; forming a gate stack structure on top and side faces of the fin; forming source/drain structures in the fin on both sides of the gate stack structure; and performing metallization. The present invention makes use of traditional quasi-planar based top-down processes, thus the manufacturing process thereof becomes simple to implement; the present invention exhibits good compatibility with CMOS planar process and can be easily integrated; the present invention also is favorable for suppressing short channel effects desirably, and boosts MOSFETs to develop towards a trend of downscaling size.

Abstract: Use of 9,10-anthraquinone compounds of formula (I) or pharmaceutical salts thereof or plant extracts containing said compounds in the preparation of anti-HCV medicaments is disclosed, in which Y1 are Y2 are independently hydrogen, hydroxyl or groups of formula (II); and R1, R2, R3, R4, R5 and R6 are independently hydrogen, hydroxyl, carboxyl, cyano group, nitro group, groups of formula (III) or groups selected from those substituted or unsubstituted groups: amino, C1-C6 aliphatic hydrocarbon, C3-C7 cyclic aliphatic hydrocarbon, C1-C6 alkoxy, C2-C7 carbalkoxy, C1-C4 acyloxy, C6-C20 aryl, or 5 to 7 members heterocyclic or benzoheterocyclic thereof; or R5 and R6 form the group of formula (IV). The compounds of present invention are cheap, safe and effective because that they mostly come from traditional Chinese medicines and have better anti-HCV effects and lighter side effects.

Abstract: The invention provides a semiconductor device, including: a semiconductor base, on an insulation layer; source/drain regions abutting opposite first sides of the semiconductor base; and gates at opposite second sides of the semiconductor base, wherein the semiconductor base includes a cavity, and the insulation layer is exposed by the cavity. The invention also provides a method for forming a semiconductor device, including: forming a semiconductor bottom on an insulation layer; forming source/drain regions, the source/drain regions abutting opposite first sides of the semiconductor bottom; forming gates on opposite second sides of the semiconductor bottom; and removing a part of the semiconductor bottom to form a cavity in the semiconductor bottom, the cavity exposing the insulation layer. With the technical solutions provided by the invention, short-channel effects can be alleviated, and the resistance of the source/drain regions and parasitic capacitance can be reduced.

Abstract: A micro-mixer and use thereof for synthesis of barium sulfate particles is disclosed. The micro-mixer includes feeding tubes, reservoirs, a mixing channel, a buffer reservoir and a sampling tube. The mixing channel is made of hydrophobic materials and processed into a spiral structure, in which baffles are set in interval arrangement at both sides of the channel wall. The types of the baffles include leaning-forward baffles, vertical baffles and leaning-backward baffles. Setting the baffles helps produce local secondary flow in the mixer, which enhances fluids mixing process. The micro-mixer is suitable to rapid reactions or precipitation processes, whose reaction time is much less than mixing time, and has broad application prospects in many fields involving mixing reaction such as pharmaceutical and chemistry industry.

Abstract: A transistor, a method for fabricating a transistor, and a semiconductor device comprising the transistor are disclosed in the present invention. The method for fabricating a transistor may comprise: providing a substrate and forming a first insulating layer on the substrate; defining a first device area on the first insulating layer; forming a spacer surrounding the first device area on the first insulating layer; defining a second device area on the first insulating layer, wherein the second device area is isolated from the first device area by the spacer; and forming transistor structures in the first and second device area, respectively. The method for fabricating a transistor of the present invention greatly reduces the space required for isolation, significantly decreases the process complexity, and greatly reduces fabricating cost.

Abstract: An Ag/MnyOx/C catalyst is disclosed, wherein MnyOx is one of Mn3O4 and MnO, or the mixture of Mn3O4 and MnO, or the mixture of Mn3O4 and MnO2 with the mass content of MnO2 in the mixture of Mn3O4 and MnO2 being 0.01-99.9%. The catalyst is obtained by pyrolyzing AgMnO4 at a high temperature. The preparation method comprises two steps: (1) preparing AgMnO4 crystal as the precursor; (2) preparing the Ag/MnyOx/C catalyst. The catalyst has advantages such as high oxygen reduction reaction (ORR) catalytic activity in an alkaline environment, good stability, abundant availability and low cost of raw materials, safety, non-toxicity and pollution-free, environmental friendliness, and adaptive capacity for massive production. The catalyst can be used as oxygen reduction catalyst in metal air fuel cell, alkali anion exchange membrane fuel cell and other alkaline environments.

Abstract: The present invention provides a distributed combined cooling, heating and power generating apparatus with an internal combustion engine by combining solar energy and alternative fuel and a method thereof, the apparatus comprising: an energy storage system for combined reaction between solar energy and alternative fuel, a solar fuel internal combustion engine generating system, a lithium bromide refrigeration system for absorbing exhaust heat of flue gas of solar fuel, a reaction device for recovering exhaust heat of flue gas, a heat exchanger for recovering exhaust heat of exhaust gas and a cylinder jacket and water plate heat exchanger.

Abstract: This application provides a catalyst for producing paraxylene by co-conversion of methanol and/or dimethyl ether and C4 liquefied gas, and preparation and application thereof. The catalyst is an aromatization molecular sieve catalyst with a shape-selective function co-modified by bimetal and siloxane compound. Methanol and/or dimethyl ether and C4 liquefied gas are fed in reactor together, wherein aromatization reaction occurring on a modified shape-selective molecular sieve catalyst. The yield of aromatics is effectively improved, in which paraxylene is the main product. In products obtained by co-conversion of methanol and/or dimethyl ether and C4 liquefied gas, the yield of aromatics is greater than 70 wt %, and the content of paraxylene in aromatics is greater than 80 wt %, and the selectivity of paraxylene in xylene is greater than 99 wt %.

Abstract: A multi-granularity parallel storage system including a plurality of memories, a shift generator, an address increment lookup unit, an address shifter, a row address generator, and a plurality of address adders. The shift generator is configured to generate a shift value. The address increment lookup unit is configured to generate input data for the address shifter. The address shifter is configured to cyclically shift the input data rightward by Shift elements and then output the shifted data. The row address generator is configured to generate a row address RowAddr and input the generated row address RowAddr to the other input terminal of each address adder. Each address adder is configured to perform a non-sign addition of the input data at the two input terminals to obtain a read/write (R/W) address for one of the memories and input the R/W address to an address input terminal of the memory.

Abstract: A tri-axial MEMS accelerometer includes a top cap silicon wafer and a bottom cap silicon wafer coupled with a measurement mass. The measurement mass has a two level structure, each level having an inner frame coupled to an outer frame by a plurality of first elastic beams, a mass coupled to the inner frame by a plurality of second elastic beams, and a comb coupling structure between the mass and the inner frame. The comb coupling structures are arranged in an orthogonal orientation. The top level and bottom level measurement masses measure acceleration in perpendicular directions. The top level and bottom level measurement masses and the inner frame form an integral unit which moves along a third direction. Acceleration in the third direction is measured from the change in capacitance between the integral unit and the top cap silicon wafer and bottom cap silicon wafer.

Abstract: The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that at least one of the source and drain regions comprises a GeSn alloy. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn stressed source and drain regions with high concentration of Sn is formed by implanting precursors and performing a laser rapid annealing, thus the device carrier mobility of the channel region is effectively enhanced and the device drive capability is further improved.

Abstract: The present invention refers to a surface ionization detector comprises an emitter, a heating rod, a collecting electrode, a reducing liner and a housing. The emitter is made of molybdenum, platinum or alloy, and in the form of cylinder or a wire spiral. The heating rod heats and supports the metal emitter. When the heating rod is heated to 300-500° C., organic amine compounds collide with the surface of the emitter, generating positive ions through surface thermal ionization and thus are detected. The lowest detecting limit value of tertiary amine by the detector in the present invention can achieve to 10?14 g/s. The response to other hydrocarbons, ketones, etc., is 5-6 orders of magnitude lower than that of organic amines. The detector can selectively detect amines, hydrazines and their derivatives, and so on. The detector can be used as a detector for a gas chromatography system adopting capillary column or packed column, or alternatively be used alone as a sensor.

Abstract: The present invention provides a method for manufacturing a semiconductor structure, comprising: forming a first contact layer on an exposed active region of a first spacer; forming a second spacer at a region of the first contact layer close to a gate stack to partially cover the exposed active region; forming a second contact layer in the uncovered exposed active region, wherein when a diffusion coefficient of the first contact layer is the same as that of the second contact layer, the first contact layer has a thickness less than that of the second contact layer; and when the diffusion coefficient of the first contact layer is different from that of the second contact layer, the diffusion coefficient of the first contact layer is smaller than that of the second contact layer. Correspondingly, the present invention also provides a semiconductor structure.

Abstract: A supported tungsten carbide catalyst comprises tungsten carbide as its active component and a mesoporous carbon as its support, wherein tungsten carbide is highly dispersed on the surface and in the channels of the mesoporous carbon, and the content of tungsten element is in the range from 30% to 42% by mass based on the mesoporous carbon. This catalyst can be prepared by impregnation process. This catalyst can be used for the direct catalytic conversion of cellulose to ethylene glycol under the hydrothermal conditions and at a temperature of 245° C. and the hydrogen pressure of 6 MPa with high reactivity, selectivity and stability.

Abstract: The present disclosure provides A data access method and device for parallel FFT computation. In the method, FFT data and twiddle factors are stored in multi-granularity parallel memories, and divided into groups throughout the computation flow according to a uniform butterfly representation. Each group of data involves multiple butterflies that support parallel computation. Meanwhile, according to the butterfly representation, it is convenient to generate data address and twiddle factor coefficient address for each group. With different R/W granularities, it is possible to read/write data and corresponding twiddle factors in parallel from the multi-granularity memories. The method and device further provide data access devices for parallel FFT computation. In the method and device, no conflict will occur during read/write operations of memories, and no extract step is required for sorting the read/written data.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method may comprise: forming a gate stack on a substrate; depositing a dielectric layer on the substrate and the gate stack; performing a main etching operation on the dielectric layer to form a spacer, with a remainder of the dielectric layer left on the substrate; and performing an over etching operation to remove the remainder of the dielectric layer. According to the method disclosed herein, two etching operations where an etching gas comprises a helium gas are performed, without forming an etching stop layer of silicon oxide. As a result, it is possible to reduce damages to the substrate and also to reduce the process complexity. Further, it is possible to optimize a threshold voltage, effectively reduce an EOT, and enhance a gate control capability and a driving current.

Abstract: A method and device for multi-granularity parallel FFT butterfly computation. The method and device read data and twiddle factors for computation in one butterfly group from the input buffers and the twiddle factor buffer at a time, perform multi-stage butterfly computation in parallel using uniform butterfly representations, and write the results back to the input buffers. The method and device greatly reduce the frequency for accessing the memory, improve speed for butterfly computation, and reduce power consumption. The method and device achieve multi-granularity butterfly computation of various data formats in a parallel and efficient manner. The method and device can specify the parallel granularity and data format for butterfly computation according to particular applications, and are applicable to FFT butterfly computation of balanced and unbalanced groups.