Abstract: Embodiments of the present disclosure provide a real-time microseismic magnitude calculation method based on deep learning and a corresponding device. The method includes: constructing a DAS-based horizontal well microseismic monitoring system; constructing a training data set; constructing a magnitude calculation module, wherein the magnitude calculation module comprises two input branches of frequency spectrum and time waveform, the two input branches use a 3-layer convolution structure to extract frequency characteristic and waveform characteristic of a microseismic event, and then a model fusion is performed, and then 2 fully connected layers are used, and finally a calculated magnitude is outputted; training the magnitude calculation module; and analyzing and processing field data.

Abstract: The present invention is related to a sensor. In particular, the present invention is related to a pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a pressure sensor die is provided. The pressure sensor die is uniformly compressed by the external pressure to be measured and can deform freely inside the chamber. The pressure sensor die is primarily constructed of single crystalline silicon and comprises a substrate and a cap connected together. A recess is formed on the cap. The recess forms a sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. The substrate further comprises a plurality of piezoresistive sensing elements which are located inside the sealed cavity. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.

Abstract: A pressure sensor die especially suitable for high-temperature, high-pressure operating environment and delivering accurate and reliable pressure measurement at low cost. A single crystalline silicon includes a cap, a substrate and a base connected together. A recess formed on the cap creates an upper sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. A recess formed on the base creates a lower sealed cavity with the substrate. The upper sealed cavity and the lower sealed cavity overlap in their projections. The substrate includes at least two sets of piezoresistive sensing elements located within the overlapping projections, perpendicular to each other, and oriented in different crystallographic directions.

Abstract: A method for fabricating a tri-axial MEMS accelerometer that has a top cap silicon wafer and a bottom cap silicon wafer coupled with a measurement mass. The measurement mass has a two level structure, each level having an inner frame coupled to an outer frame by a plurality of first elastic beams, a mass coupled to the inner frame by a plurality of second elastic beams, and a comb coupling structure between the mass and the inner frame. The comb coupling structures are arranged in an orthogonal orientation. The top level and bottom level measurement masses measure acceleration in perpendicular directions. The top level and bottom level measurement masses and the inner frame form an integral unit which moves along a third direction. Acceleration in the third direction is measured from the change in capacitance between the integral unit and the top cap silicon wafer and bottom cap silicon wafer.

Abstract: A pressure sensor die especially suitable for high-temperature, high-pressure operating environment and delivering accurate and reliable pressure measurement at low cost. A single crystalline silicon includes a cap, a substrate and a base connected together. A recess formed on the cap creates an upper sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. A recess formed on the base creates a lower sealed cavity with the substrate. The upper sealed cavity and the lower sealed cavity overlap in their projections. The substrate includes at least two sets of piezoresistive sensing elements located within the overlapping projections, perpendicular to each other, and oriented in different crystallographic directions.

Abstract: A pressure sensor die especially suitable for high-temperature, high-pressure operating environment and delivering accurate and reliable pressure measurement at low cost. A single crystalline silicon includes a cap, a substrate and a base connected together. A recess formed on the cap creates an upper sealed cavity with the substrate. A silicon oxide layer is formed between the substrate and the cap. A recess formed on the base creates a lower sealed cavity with the substrate. The upper sealed cavity and the lower sealed cavity overlap in their projections. The substrate includes at least two sets of piezoresistive sensing elements located within the overlapping projections, perpendicular to each other, and oriented in different crystallographic directions.

Abstract: The present invention is related to a sensor. In particular, the present invention is related to a MEMS strain gauge die and its fabrication process. The MEMS strain gauge die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present strain gauge die is more immune to temperature effects. It is especially suitable for operating in a high temperature environment and is capable of delivering accurate and reliable strain measurements at low cost.

Abstract: The present invention relates to a MEMS pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a MEMS pressure sensor die is provided. The pressure sensor die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.

Abstract: A process for fabricating a symmetrical MEMS accelerometer.

Abstract: A process for fabricating a symmetrical MEMS accelerometer.

Abstract: A method for fabricating a symmetrical MEMS accelerometer. For each half, etch multiple holes on the bottom of an SOI wafer; form multiple hollowed parts on the top of a silicon wafer; form silicon dioxide on the top and bottom of the silicon wafer; bond the top of the silicon wafer with the bottom of the SOI wafer; deposit silicon nitride on the bottom of the silicon wafer, remove parts of the silicon nitride and silicon dioxide to expose the bottom of the silicon wafer; etch the exposed bottom of the silicon wafer; reduce the thickness of the SOI wafer; remove the silicon nitride and exposed bottom. Bond the two halves along their bottom surface to form the accelerometer. Form a bottom cap including electrodes. Bond the bottom cap and the accelerometer. Deposit metal on top of the silicon wafer.

Abstract: A tri-axial MEMS accelerometer includes a top cap silicon wafer and a bottom cap silicon wafer coupled with a measurement mass. The measurement mass has a two level structure, each level having an inner frame coupled to an outer frame by a plurality of first elastic beams, a mass coupled to the inner frame by a plurality of second elastic beams, and a comb coupling structure between the mass and the inner frame. The comb coupling structures are arranged in an orthogonal orientation. The top level and bottom level measurement masses measure acceleration in perpendicular directions. The top level and bottom level measurement masses and the inner frame form an integral unit which moves along a third direction. Acceleration in the third direction is measured from the change in capacitance between the integral unit and the top cap silicon wafer and bottom cap silicon wafer.

Abstract: An accelerometer includes a measurement mass, a top cap silicon wafer and a bottom cap silicon wafer, both of which are coupled with the measurement mass. The measurement mass includes a support frame, a mass, and a plurality of resilient beams. The mass and the resilient beams are located within the support frame. The mass and the support frame are connected by several sets of the resilient beams, and each set comprises two resilient folding beams. The resilient folding beams are symmetrically provided with respect to the midline of the mass. A connection beam is provided in between each set of the resilient folding beams to connect the resilient folding beams together. Silicon wafers with electrodes are bonded on the top and bottom surfaces of the measurement mass, and form a capacitor with the measurement mass. The accelerometer has a large mode isolation ratio and is symmetrical in high order vibrational modes, which further decreases the noise of a MEMS chip.

Abstract: A symmetrical MEMS accelerometer. The accelerometer includes a top half and a bottom half bonded together to form the frame and the mass located within the frame. The frame and the mass are connected through resilient beams. A plurality of hollowed parts and the first connecting parts are formed on the top and bottom side of the mass, respectively. The second connecting parts are formed on the top and bottom side of the frame, respectively. The resilient beams connect the first connecting part with the second connecting part. Several groups of comb structures are formed on top of the hollowed parts. Each comb structure includes a plurality of moveable teeth and fixed teeth. The moveable teeth extend from the first connecting part and the fixed teeth extend from the second connecting part. Capacitance is formed between the movable teeth and the fixed teeth. Since the accelerometer is symmetrical with a large mass, it has a large capacitance with a low damping force.

Abstract: A MEMS anti-phase vibratory gyroscope includes two measurement masses with a top cap and a bottom cap each coupled with a respective measurement mass. The measurement masses are oppositely coupled with each other in the vertical direction. Each measurement mass includes an outer frame, an inner frame located within the outer frame, and a mass located within the inner frame. The two measurement masses are coupled with each other through the outer frame. The inner frame is coupled with the outer frame by a plurality of first elastic beams. The mass is coupled with the inner frame by a plurality of second elastic beams. A comb coupling structure is provided along opposite sides of the outer frame and the inner frame. The two masses vibrate toward the opposite direction, and the comb coupling structure measures the angular velocity of rotation.

Abstract: An accelerometer has E-shaped resilient beams to isolate stress and reduce deformation. A top cap silicon wafer and a bottom cap silicon wafer are both coupled with a measurement mass to form a capacitor. The measurement mass has a mass, range-of-motion stops, and resilient beams located within a support frame. The range-of-motion stops are coupled to the support frame by connection beams, and the mass is coupled with the range-of-motion stops by groups of E-shaped resilient beams. The ends of each resilient beam are connected to the range-of-motion stops, and the middle of each resilient beam is connected to the mass.

Abstract: An accelerometer, comprises, a measurement mass, a top cap silicon wafer and a bottom cap silicon wafer, which both are coupled with the said measurement mass; the measurement mass comprises a support frame, a mass, and a plurality of resilient beams; the mass and the resilient beams are located within the support frame; the mass and the support frame are connected by several sets of the resilient beams, and each set comprises two resilient folding beams; the resilient folding beams are symmetrically provided with respect to the midline of the mass; a connection beam is provided in between each set of the resilient folding beams to connect the resilient folding beams together. Silicon wafers with electrodes are bonded on the top and bottom surfaces of the measurement mass; and forms a capacitor with the measurement mass. The accelerometer in the present invention has a large mode isolation ratio, and it is symmetrical in high order vibrational modes , which further decreases the noise of the MEMS chip.

Abstract: A MEMS anti-phase vibratory gyroscope includes two measurement masses with a top cap and a bottom cap each coupled with a respective measurement mass. The measurement masses are oppositely coupled with each other in the vertical direction. Each measurement mass includes an outer frame, an inner frame located within the outer frame, and a mass located within the inner frame. The two measurement masses are coupled with each other through the outer frame. The inner frame is coupled with the outer frame by a plurality of first elastic beams. The mass is coupled with the inner frame by a plurality of second elastic beams. A comb coupling structure is provided along opposite sides of the outer frame and the inner frame. The two masses vibrate toward the opposite direction, and the comb coupling structure measures the angular velocity of rotation.

Abstract: An accelerometer has E-shaped resilient beams to isolate stress and reduce deformation. A top cap silicon wafer and a bottom cap silicon wafer are both coupled with a measurement mass to form a capacitor. The measurement mass has a mass, range-of-motion stops, and resilient beams located within a support frame. The range-of-motion stops are coupled to the support frame by connection beams, and the mass is coupled with the range-of-motion stops by groups of E-shaped resilient beams. The ends of each resilient beam are connected to the range-of-motion stops, and the middle of each resilient beam is connected to the mass.

Abstract: A tri-axial MEMS accelerometer includes a top cap silicon wafer and a bottom cap silicon wafer coupled with a measurement mass. The measurement mass has a two level structure, each level having an inner frame coupled to an outer frame by a plurality of first elastic beams, a mass coupled to the inner frame by a plurality of second elastic beams, and a comb coupling structure between the mass and the inner frame. The comb coupling structures are arranged in an orthogonal orientation. The top level and bottom level measurement masses measure acceleration in perpendicular directions. The top level and bottom level measurement masses and the inner frame form an integral unit which moves along a third direction. Acceleration in the third direction is measured from the change in capacitance between the integral unit and the top cap silicon wafer and bottom cap silicon wafer.