Abstract: The present disclosure is related to a method of providing a die structure for semiconductor packaging. The method includes providing a substrate with a bonding pad; forming a patterned mask layer on the substrate; forming an opening on the mask layer; depositing a conductive layer in the opening; forming a cap layer on the conductive layer, and removing the mask layer. The cap layer forming step allows the contacting area between the cap layer and the conductive layer to be substantially equal to the top surface area of the conductive layer by reflowing solder material prior to the removal of the mask layer.

Abstract: The present invention provides a method for manufacturing a semiconductor package structure, including (i) providing a carrier plate; (ii) disposing a die on the carrier plate; (iii) forming a plurality of bonding wires having a first end and a second end; (iv) forming an encapsulant covering the die and the bonding wires and exposing a portion of each of the bonding wires from a first surface thereof; (v) removing the carrier plate; (vi) forming a patterned conductive layer on a second surface of the encapsulant opposite to the first surface; (vii) electrically connecting the second ends of the bonding wires to the active surface of the die via the patterned conductive layer; and (viii) forming a plurality of first external connection terminals on the first surface of the encapsulant respectively covering the portions of the bonding wires exposed from the encapsulant.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a conductive pad on a semiconductor die; forming a seed layer over the conductive pad; defining a first mask layer over the seed layer; and forming a silver alloy bump body in the first mask layer. The forming a silver alloy bump body in the first mask layer includes operations of preparing a first cyanide-based bath; controlling a pH value of the first cyanide-based bath to be within a range of from about 6 to about 8; immersing the semiconductor die into the first cyanide-based bath; and applying an electroplating current density of from about 0.1 ASD to about 0.5 ASD to the semiconductor die.

Abstract: A conductive structure for a semiconductor chip and a method for forming the conductive structure are provided. The semiconductor chip comprises a semiconductor substrate, a pad, a passivation layer and a patterned insulating layer. The patterned insulating layer is disposed on the passivation layer and partially and directly covers the first opening of the pad to expose a second opening. The conductive structure comprises an under bump metal (UBM) layer and a conductive bump. The UBM layer is disposed in the second opening defined by the patterned insulating layer and is electrically connected to the pad. The conductive bump is disposed on the UBM layer and is electrically connected to the UBM layer. The upper surface of the conductive bump is greater than the upper surface of the patterned insulating layer, while the portion of the conductive bump disposed in the second opening is covered by the UBM layer.

Abstract: The present invention provides a semiconductor package structure, which includes a die, a plurality of bonding wires, an encapsulant, and a plurality of first external terminals. The die has an active surface and a back surface. A first end of each of the bonding wires is connected to the back surface of the die, and a second end opposite to the first end is electrically connected to the active surface of the die. The encapsulant covers the back surface of the die and the bonding wires, wherein a portion of each of the bonding wires is exposed from the encapsulant. The first external terminals are disposed on the top surface of the encapsulant, and cover the exposed portions of the bonding wires respectively and are electrically connected to the bonding wires.

Abstract: A structure of stacking chips and a method for manufacturing the structure of stacking chips are provided. A wafer with optical chips and a glass substrate with signal processing chips are stacked with each other, and then subjected to ball mounting and die sawing to form the stacked packaging structure. The optical chips and the signal processing chips form the electrical connection on the surface of the glass substrate via the through holes thereof.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, at least two pads, a passivation layer, at least two under bump metallization (UBM) layers and at least two bumps. The pads are disposed adjacent to each other on the substrate along the first direction. The passivation layer covers the substrate and the peripheral upper surface of each pad to define an opening. Each of the openings defines an opening projection along the second direction. The opening projections are disposed adjacent to each other but not overlapping with each other. Furthermore, the first direction is perpendicular to the second direction. The UBM layers are disposed on the corresponding openings, and the bumps are respectively disposed on the corresponding UBM layers. With the above arrangements, the width of each bump of the semiconductor structure of the present invention could be widened without being limited by the bump pitch.

Abstract: A conductive structure for a semiconductor chip and a method for forming the conductive structure are provided. The semiconductor chip comprises a plurality of first pads and second pads. The pad area is defined with a first area, a second area and a third area, wherein the first area is located between the second area and the third area. Each of the first pads and the second pads are interlaced to each other on the first area. The conductive structure comprises a plurality of conductive bumps formed on each of the first pads and the second pads respectively to electrically connect with each of the first pads and the second pads. Each of the conductive bumps has a first bump-width disposed on the first area and a second bump-width disposed on one of the second and third areas in which the first bump-width is shorter than the second bump-width.

Abstract: A semiconductor structure includes a device, a conductive pad on the device, and a Ag1-xYx alloy bump over the conductive pad. The Y of the Ag1-xYx bump comprises metals forming complete solid solution with Ag at arbitrary weight percentage, and the X of the Ag1-xYx alloy bump is in a range of from about 0.005 to about 0.25. A difference between one standard deviation and a mean value of a grain size distribution of the Ag1-xYx alloy bump is in a range of from about 0.2 ?m to about 0.4 ?m. An average grain size of the Ag1-xYx alloy bump on a longitudinal cross sectional plane is in a range of from about 0.5 ?m to about 1.5 ?m.

Abstract: This invention relates to a packaging structure and method for manufacturing the packaging structure. The packaging structure comprises a substrate film, a plurality of chips, a compound resin layer and a support layer. The substrate film is formed with circuits having a plurality of terminals exposed from a solder mask. The chips, each of which has a plurality of pads, under bump metals (UBMs) formed on the pads, and composite bumps disposed onto the UBMs, are bonded onto the substrate film to form the first tape. The second tape comprises the support layer and the compound resin layer formed on the support layer. The first tape and the second tape are both in reel-form and are expanded towards a pair of rollers to be heated and pressurized for encapsulating the chips.

Abstract: A computer implemented apparatus for automatically generating and filtering creative proposals is disclosed. Particularly, the computer implemented apparatus automatically generates all possible featured component code sets which corresponding to all possible featured components, and compares them to the prior art code sets which corresponding to the prior objects. Thereby, the novel code sets which corresponding to the novel creative proposals are rapidly filtered out. The computer implemented apparatus comprises a standard component database, a permutation and combination module, a featured component code set database, a prior art code set database, a matching module, a sifting module and an output module.

Abstract: A chip packaging method includes the steps of: attaching a first tape to a metal plate; patterning the metal plate to form a plurality of terminal pads and a plurality of leads, wherein the plurality of terminal pads and the plurality of leads are disposed on two opposite sides of a central void region, the plurality of terminal pads on each side are arranged in at least two rows spaced apart from each other in the direction away from the central void region, and each lead has a first end portion extending to the central void region and a second end portion connecting to a corresponding terminal pad; attaching a second tape having openings to the plurality of terminal pads, wherein each of the openings exposes the central void region and the first end portions of the leads; removing the first tape; attaching a chip to the plurality of terminal pads and the plurality of leads, wherein a plurality of bond pads on the chip are corresponding to the central void region; and connecting the bond pads to the first en

Abstract: A thermally enhanced electronic package comprises a driver chip, an insulator, a flexible carrier, and carbon nanocapsules. The flexible carrier includes a flexible substrate, a wiring layer formed on the substrate, and a resistant overlaying the wiring layer. The driver chip is connected to the wiring layer. The insulator is filled in the gap between the driver chip and the flexible carrier. The carbon nanocapsules are disposed on the driver chip, on the resistant, on the flexible carrier, or in the insulator to enhance heat dissipation of electronic packages.

Abstract: This invention provides an RFID real-time information system accommodated to a semiconductor supply chain for exchanging real-time information. The RFID real-time information system is characterized by comprising an RFID middleware module for generating a stock and logistic information corresponding to a plurality of carriers and wafers from a tag information; a manufacturing information module for storing an object information corresponding to the plurality of wafers; a real-time information module for integrating the RFID middleware module with the manufacturing information module to generate real-time information corresponding to the plurality of wafers and carriers; and a business-to-business (B2B) e-commerce module comprising a plurality of B2B servers respectively disposed in vendors in the semiconductor supply chain for connecting and exchanging the real-time information through a standard protocol of e-commerce.

Abstract: This invention discloses a ventilating apparatus which has a configuration extending along a first axis, a second axis and a third axis. The first axis, the second axis and the third axis are orthogonal to each other. The ventilating apparatus includes a main body, a tail pipe and an airtight sealing material. The main body made of porous ceramics having an outer surface. The main body has a head end and a tail end disposed along the second axis, a first aperture passing therethrough along the first axis near the head end of the main body, and a first air orifice extending along the second axis. The tail pipe has a second aperture which is connected to the first aperture of the main body. The airtight sealing material covering the outer surface of the main body with the first aperture exposed.

Abstract: This invention discloses a ventilating apparatus which has a configuration extending along a first axis, a second axis and a third axis. The first axis, the second axis and the third axis are orthogonal to each other. The ventilating apparatus includes a main body and a tail pipe. The main body has a head end and a tail end disposed along the second axis, two sidewalls disposed along the third axis, and the first aperture along the first axis. The ventilating apparatus further includes a first air orifice which extends along the second axis and passes through from the tail end to the first aperture, and the bypassing air orifices which connect the first air orifice and the first aperture. The tail pipe has a second aperture which is connected to the first aperture of the main body.

Abstract: A packaging method is disclosed that comprises attaching a plurality of dice, each having a plurality of bonding pads disposed on an active surface, to an adhesive layer on a substrate. A polymer material is formed over at least a portion of both the substrate and the plurality of dice and a molding apparatus is used on the substrate to force the polymer material to substantially fill around the plurality of dice. The molding apparatus is removed to expose a surface of the polymer material and a plurality of cutting streets is formed on an exposed surface of the polymer material. The substrate is removed to expose the active surface of the plurality of dice.

Abstract: A packaging method is disclosed that comprises attaching a plurality of dice, each having a plurality of bonding pads disposed on an active surface, to an adhesive layer on a substrate. A polymer material is formed over at least a portion of both the substrate and the plurality of dice and a molding apparatus is used on the substrate to force the polymer material to substantially fill around the plurality of dice. The molding apparatus is removed to expose a surface of the polymer material and a plurality of cutting streets is formed on an exposed surface of the polymer material. The substrate is removed to expose the active surface of the plurality of dice.

Abstract: A method for manufacturing a semiconductor package structure is disclosed. In one embodiment, the method includes the steps of forming a plurality of conductive pastes on a matrix lead frame with a groove located within a predetermined distance from each conductive paste on the lead; partially curing the conductive pastes so that the conductive pastes are in a semi-cured state; preparing at least one chip with a plurality of bumps thereon; electrically connecting the chip and the lead by implanting the bumps into the semi-cured conductive pastes, wherein the groove on the lead of the matrix lead frame is configured to receive overflowed semi-cured conductive pastes; curing the semi-cured conductive pastes to completely secure the bumped chip; and forming an encapsulating material covering the lead frame and the chip. The method can also be applied in pre-molded lead frame package.

Abstract: A conductive structure for a semiconductor integrated circuit is provided. The semiconductor integrated circuit comprises a pad, and a passivation layer partially overlapping the pad, which jointly define an opening portion. The conductive structure is adapted to be electrically connected to the pad through the opening portion. The conductive structure comprises an under bump metal (UBM). A first conductor layer formed on the under bump metal is electrically connected to the under bump metal. A second conductor layer formed on the first conductor layer and electrically connected to the first conductor layer and a cover conductor layer. Furthermore, the under bump metal, the first conductor layer, and the second conductor jointly define a basic bump structure. The cover conductor layer is adapted to cover the basic bump structure.