Abstract: A method for measuring thickness or defect depth by pulsed infrared thermal wave technology is described. The method includes heating a measured object by pulsed heating devices, and at the same time, obtaining a thermal image sequence on the surface of the measured object by an infrared thermography device, and storing the thermal image sequence in a general-purpose memory. The method also includes multiplying a temperature-time curve at every point of the thermal image sequence by a corresponding time, thereby obtaining a new curve. The method also includes calculating a first-order differential and obtaining a peak time thereof. The method also includes use of one or more formulas to thereby determine the thickness or the defect depth of the measured object.
Type:
Grant
Filed:
June 14, 2011
Date of Patent:
October 11, 2016
Assignees:
CAPITAL NORMAL UNIVERSITY, BEIJING WAITEKSIN ADVANCED TECHNOLOGY CO., LTD., CHONGQING NORMAL UNIVERSITY
Abstract: A method for measuring thickness or defect depth by pulsed infrared thermal wave technology is described. The method includes heating a measured object by pulsed heating devices, and at the same time, obtaining a thermal image sequence on the surface of the measured object by an infrared thermography device, and storing the thermal image sequence in a general-purpose memory. The method also includes multiplying a temperature-time curve at every point of the thermal image sequence by a corresponding time, thereby obtaining a new curve. The method also includes calculating a first-order differential and obtaining a peak time thereof. The method also includes use of one or more formulas to thereby determine the thickness or the defect depth of the measured object.
Type:
Application
Filed:
June 14, 2011
Publication date:
June 5, 2014
Applicants:
CAPITAL NORMAL UNIVERSITY, CHONGQING NORMAL UNIVERSITY, BEIJING WAITENKSIN ADVANCED TECHNOLOGY CO., LTD
Inventors:
Zhi Zeng, Xun Wang, Ning Tao, Lichun Feng