Abstract: A supported photovoltaic array and method in which support elements are in rows spaced from one another and are bi-directionally spanned by members which mount photovoltaic modules that are separated from one another and are secured to the spanning members by cushioned load-spreading attachments positioned in the spaces between adjacent modules.

Abstract: The invention provides for placing a material to be scribed in a gaseous atmosphere and contacting the surface of the material with a non-cutting heated tip. The heated tip is rounded to prevent cutting and is moved relative to the material. The tip is heated during the scribing operation, either continuously at a prescribed level, or discontinuously in order to maintain the average temperature at a prescribed level.

Abstract: Particulate semiconductor devices and method of preparation by a low temperature process. A particulate layer is screen printed on a metallized substrate and a rear contact is formed by alloying the semiconductor particules to the substrate. The layer is fired and a front Schottky contact applied. The resulting device has sharp diode IV-characteristics, low leakage current, and significant reverse break-down voltages. In the manufacture of efficient and red-enhanced particulate silicon pn-junction solar cells, prediffused particles are used, offering major advantages compared to other techniques, such as where the junction is formed after completion of a particulate layer.

Abstract: A photovoltaic laminate of different semiconductor layers for providing a wide range of photovoltaic characteristics. One of the layers is an amorphous semiconductor and at least one other of the layers is of crystalline particles. Additional semiconductor layers, both amorphous and non-amorphous, may be included. The amorphous layers have a thickness of about a few microns and the crystalline layers have a thickness above about 60 microns. The various semiconductor layers can include P, N and intrinsic regions. In accordance with a method aspect of the invention, the particulate layers are produced by blowing a molten semiconductor through a nozzle or by the spin coating of emulsions. The particles are desirably accompanied by a binder in the form of a silicate, an acrylic or a cycloaliphatic epoxy.

Abstract: A conductive substrate for the deposition of material thereon which comprises an insulating layer upon said substrate, and a pluralitry of aperatures in said insulating layer containing conductive material formed from said substrate forming a plurality of metallic nucleating centers for the adherence of said material to said substrate.

Abstract: The invention provides a method for preparing amorphous semiconductors by (a) activating a semiconductane gas using a activator to produce mononuclear, reactive fragments or gaseous condensation products which serve as precursors for the deposition of an amorphous semiconductor; and (b) controlling the temperature of the activator and the flow rate and temperature of the semiconductane gas so that it does not completely decompose upon the activator.

Abstract: Thin film solid state batteries and electrochromic devices are prepared in which one of the electrodes is an electronic organic polymeric material. The counter electrode is an alkali metal ion acceptor and releaser in an appropriate electrolyte containing an alkali metal salt. The counter electrode can also be a non-alkali metal with its salt in the electrolyte. The organic polymer can also be replaced by sulfides, oxides, or selenides. The devices operate at ambient temperatures. The batteries can also be combined with photovoltaic devices to form a single unit which can store solar energy.

Abstract: Energy responsive apparatus in which a semiconductor is in contact with an energy transmissive conductor. An electrode with insulated face and side surfaces has an uninsulated surface in contact with the semiconductor, and a further electrode is in contact with the energy transmissive conductor and the semiconductor simultaneously. Or the energy transmissive conductor is in simultaneous further contact with the semiconductor and the further electrode. The insulator is an oxide of the electrode material.

Abstract: Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed first electrode and the semiconductor layer in colloidal solutions, or well stirred suspensions of specified metal hydroxides, such as those of nickel, chromium, cobalt or related metals, followed by rinsing the non-sensitive side of the device in de-ionized water. After air drying, the deposition of an overlying second electrode is carried out by a metallization technique. The device is then heated in air, at 150.degree. C. for four hours.

Abstract: Stabilization of energy sensitive semiconductor devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and related metals, followed by rinsing, drying, and the final deposition of an overlying electrode by metallization.

Abstract: A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

Abstract: Removal of defects from semiconductors by applying a reverse bias potential to the semiconductors and irradiating the semiconductors with photon energy greater than their bangap energies.

Abstract: Directed energy conversion of semiconductors by the directed energy fusion of a selective region of a semiconductor layer to provide a conductive path through the layer. A conductive path is formed through a semiconductive layer through opposed electrodes by conversion of the semiconductive region, for example, by laser energy applied to change the structure in the region extending between the electrodes. The change in conductivity of the path is monitored and used to control the formation of the conductive path by controlling the directed energy source.

Abstract: Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and related metals, followed by rinsing, drying and the final deposition of an overlying electrode by metallization.

Abstract: A semiconductor device in which particles of semiconductive material extend as separate chains from respective first and second contacts. When one of the contacts is of p-type material, the conductive materials that extend from it are of likewise p-material. Similarly, when the contact is of n-type material, the chain that extends from it is also of n-material. In any case the particles can include both p-type and n-type. One of the contacts can have a prescribed work function and the other contact have a lower work function in order to produce a prescribed junction between the two contacts. In addition the contacts may be polymeric. The particulate bodies may range in size from 10 to about 3000 angstroms in diameter. The n-type particles provide a continuous path for electrons and the p-type particles provide a continuous path for holes. The particles are adhered to one another by an inorganic or organic binder, pressure, heat treatment or thermal fusion.

Abstract: A semiconductor device with an intrinsic layer that exhibits enhanced photoconductivity by the addition of a non-incidental amount of an n-type dopant.

Abstract: The specification discloses a P-I-N device wherein a double heterojunction is provided by a body of intrinsic amorphous silicon sandwiched between two microcrystalline silicon layers.

Abstract: In a method and apparatus for continuous plasma CVD deposition in and through a vacuum system, box carriers are provided to carry both the substrates and the plasma exciting electrodes through the system. Contamination of the system and cross doping of the applied coatings are reduced.

Abstract: Selective incision of metallic layers overlying semiconductors by laser ablation (evaporation) of selected regions of a dye sensitized coating on each such metallic layer, followed by etching of the metallic layer to avoid objectionable alloying by laser scribing of the metallic layer to provide the desired incisions.