Abstract: The method of producing transparent and conductive tin oxide, which comprised the steps of(a) providing a phosphorous fluoride or a non-matallic halocarbon where the halogen consists of fluorine;(b) providing an organotin compound; and(c) applying the combination of said fluoride or said halocarbon and said organotin compound to a substrate in an oxidizing atmosphere.

Abstract: In a method of isolating segments of contacts on a substrate by laser scribing, a laser is directed on portions to be removed through the substrate.

Abstract: Hetero-augmentation of semiconductor materials by reacting a mixture of (1) a gaseous precursor of a host semiconductor with (2) a gaseous compound of the host and a hetero atom. The host precursor is a semiconductor hydride or a mixture of hydrides, including those of silicon and germanium. The compound of the host and hetero-atom includes a silyl or germyl dopant or alloyant. Suitable dopants are phosphorous, arsenic, and nitrogen. Suitable alloyants are other semiconductors and nitrogen. The reaction can take place pyrolytically, by electrical discharge, or photochemically.

Abstract: Method of counteracting the effects of undesired contaminants in an amorphous semiconductor, and the resulting semiconductor product. An overcompensating agent is incorporated in the semiconductor in a restricted or limited region which is less than the entirety of the semiconductor body. The semiconductor is desirably of amorphous silicon. The undesired contaminant is a p acceptor and the compensating dopant is an n donor. Alternatively, the undesired contaminant can be an n donor and the compensating dopant can be a p acceptor. Typical p acceptors are residual boron and typical n donors are phosphorous. The compensation takes place over the range from about 1 to about 25% of the maximum thickness of the region of compensation. The compensating dopant is present in a limited amount ranging from about 1 part to about 50 parts per million.

Abstract: Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate using a hot-wall epitaxial reactor.

Abstract: Preparation of amorphous semiconductor carbides that are suitable for use in a wide variety of devices by the pyrolytic decomposition of a mixture of one or more semiconductanes and one or more carbanes.

Abstract: Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are created pyrolytically, for example, on a substrate.

Abstract: Preparation of amorphous semiconductor material that is suitable for use in a wide variety of devices by the pyrolytic decomposition of one or more gaseous phase polysemiconductanes, including polysilanes and polygermanes.