Abstract: A process for preparing a metal styrene polymer composite having nano metallic particles deposited thereon is disclosed, which includes a) undergoing free radical polymerization of styrene and an optional co-monomer in the presence of a persulfate initiator and a chain transfer agent; and b) contacting the resulting styrene oligomer or copolymer of styrene and the co-monomer from step a) with an aqueous solution containing a noble metal ion dissolved therein, so that the noble metal ion is reduced to element form particles and deposit on the styrene oligomer or copolymer of styrene and the co-monomer by sulfates on the oligomer or copolymer in the absence of a reducing agent.

Abstract: A process for preparing a metal styrene polymer composite having nano metallic particles deposited thereon is disclosed, which includes a) undergoing free radical polymerization of styrene and an optional co-monomer in the presence of a persulfate initiator and a chain transfer agent; and b) contacting the resulting styrene oligomer or copolymer of styrene and the co-monomer from step a) with an aqueous solution containing a noble metal ion dissolved therein, so that the noble metal ion is reduced to element form particles and deposit on the styrene oligomer or copolymer of styrene and the co-monomer by sulfates on the oligomer or copolymer in the absence of a reducing agent.

Abstract: The present invention relates to a low-temperature method for forming carbon nanotubes, which mainly includes preparing a co-catalyst of composite metal particles on a substrate, and growing carbon nanotubes on the substrate by a thermal CVD process at 400° C. The present invention uses a non-isothermal deposition (NITD) and a metal chemical substitution reaction to prepare the co-catalyst particles on the substrate.

Abstract: A method for surface treatment is disclosed. The method is achieved by forming a MgO film on a metal surface through anode processing of Mg or Mg alloy in an alkaline solution. The alkaline solution includes a hydroxide, a thickening agent, and a film adjusting agent. As the method is performed, the target object is immersed in the alkaline solution, and the target object is connected to an anode with an average electric current density of 1˜5 A/dm, at a temperature of 0˜30° C., and within a time period of 10˜120 minutes to form a film of 5˜25 ?m. The forming rate of the film of the method of the present invention is fast, and the formed film is of little stress.

Abstract: A method for synthesizing monodipersive polymeric microspheres is disclosed. The method can control the diameter distribution of the microspheres and make it homogeneous. The manufactured polymeric microspheres also have plural functional groups on the surface for depositing metal particles thereon through redox. Moreover, the metal particles can be distributed on the surface of the polymeric microspheres homogeneously.

Abstract: The present invention discloses a method for forming a metallic microstructure on a patterned surface of a substrate by a nonisothermal deposition (NTID) in an electroless plating solution. The substrate is immersed in the solution being heated by a heating device mounted on a bottom of an electroless plating reactor while the heated solution being cooled by a cooling device provided in the reactor, and thus a seed layer is formed the patterned surface of the substrate. The substrate is then immersed in an electroless plating solution with a back surface of the substrate lying on the bottom of the reactor, so that the exposed seed layer is thickened to form the metallic microstructure.

Abstract: A method for depositing a copper layer on a substrate is disclosed. The method is achieved by heating a plating solution located between a heating device and a target substrate. Through the process illustrated above, metal nano-particles come out from the plating solution and deposit on a substrate with high aspect ratio. Surfactant can be selectively added for obtaining ultra-thin continuous film, void-free copper connectors. Furthermore, a copper film would achieve a preferred (111) crystallization orientation.