Abstract: A monolithically integrated VCSEL and photodetector, and a method of manufacturing the same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment integrates a VCSEL with an MSM photodetector on a semi-insulating substrate. A second embodiment builds layers of a p-i-n photodiode on top of layers forming a VCSEL using a standard VCSEL process. The p-i-n layers are etched away in areas where VCSELs are to be formed and left where photodetectors are to be formed. The VCSELs underlying the photodetectors are inoperable, and serve to recirculate photons which are not initially absorbed back into the photodetector. The transmit and receive pairs are packaged into a single package for interface to multifiber ferrules. The distance between the devices is precisely defined photolithographically, thereby making alignment easier.

Abstract: A vertical cavity surface emitting laser (VCSEL) with variable tuning layer for adjusting the slope of the laser and method for manufacturing the same are disclosed. In practice, a VCSEL wafer is grown by any conventional technique, and fabricated into discrete lasers while maintained in wafer form. The initial lasers are then tested to determine characteristics, such as the slope efficiency distribution. A variable thickness dielectric layer is then deposited which is calculated to tune the slope efficiency distribution to within a target specification by altering the phase of the top facet reflectivity of the initial lasers. The resulting change in transmission directly changes the laser slope in a predictable fashion. The tuning step may be repeated, if necessary, to further refine the slope to the desired value. The method produces VCSELs with similar or consistent slopes from a plurality of wafers. Also disclosed are an optical subassembly and optical transceiver incorporating the improved VCSELs.

Abstract: There is disclosed herein an opto-electronic coupling assembly for optically coupling a light active area of an active device with an end face that is disposed at one end of an elongated light guide such that light is coupled between the end face of the light guide and the light active area of the active device. The coupling assembly includes a light guide end housing that defines a housing outline and which is adapted to support the end of the light guide including its end face. The opto-electronic coupling assembly further includes an active device package which itself includes an arrangement for supporting the active device and for providing external electrical connections to the active device. An encapsulant material surrounds the active device and at least partially surrounds the support arrangement.

Abstract: A monolthically integrated VCSEL and photodetector, and a method of manufacturing same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment integrates a VCSEL with an MSM photodetector on a semi-insulating substrate. A second embodiment builds the layers of a p-i-n photodiode on top of layers forming a VCSEL using a standard VCSEL process. The p-i-n layers are etched away in areas where VCSELs are to be formed and left where the photodetectors are to be formed. The VCSELs underlying the photodetectors are inoperable, and serve to recirculate photons back into the photodetector not initially absorbed. The transmit and receive pairs are packaged in a single package for interface to multifiber ferrules. The distance between the devices is precisely defined photolithographically, thereby making alignment easier.

Abstract: An array of infrared vertical cavity surface-emitting lasers (VCSELs) and method of manufacturing the same is disclosed which reduces device-to-device non-uniformity for VCSEL arrays manufactured using well-known vapor phase epitaxial processes. The method involves growing layers comprising a standard infrared VCSEL array using a vapor phase epitaxial process on a substrate which is mosoriented from the (100) plane in the {111}A direction by preferably between eight and twelve degrees or more.