Patents Assigned to Cios Inc.
  • Patent number: 8399883
    Abstract: The present invention provides a nitrogen-oxide gas sensor that is able to measure nitric oxide and nitrogen dioxide at the same time and ensure measurement accuracy and long stability. For these purposes, the nitrogen-oxide gas sensor includes: an oxide ion conductive solid electrolyte; a primary film that contacts the solid electrolyte and is made of a p-type semi-conductor metal oxide; a secondary film that contacts the solid electrolyte and is made of a p-type semiconductor metal oxide; an n-type semiconductor metal oxide that is included in at least one of the primary and secondary films; a power source that applies electric power to the primary and secondary films by electrically connecting a primary node to the primary film and a secondary node to the secondary film; and a measurement unit that measures the electric potential difference between the primary and secondary nodes.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: March 19, 2013
    Assignees: Iljin Copper Foil Co., Ltd., Cios Inc.
    Inventors: Jin Su Park, Byung Young Yoon, Jung Won Park, Jung Hwan Cho, Sang Beom Kim
  • Publication number: 20110168557
    Abstract: A nitrogen-oxide gas sensor that is able to measure a nitric oxide and a nitrogen dioxide at the same time, and ensure sensing accuracy and stability over a long period of time. The nitrogen-oxide gas sensor includes: a first oxygen ion conductive solid electrolyte; a first film contacting the first oxygen ion conductive solid electrolyte and formed of a metal oxide; a second film contacting the first oxygen ion conductive solid electrolyte and formed of a metal oxide; a power supply source for applying a current to the first and second films by electrically connecting a first node to the first film and a second node to the second film; a measurement unit for measuring an electric potential difference between the first and second nodes; and a temperature adjustment unit for uniformly maintaining a temperature of at least one of the first and second films.
    Type: Application
    Filed: September 30, 2009
    Publication date: July 14, 2011
    Applicants: ILJIN COPPER FOIL CO., LTD., CIOS INC.
    Inventors: Jin Su Park, Byung Young Yoon, Jung Won Park, Jung Hwan Cho, Sang Beom Kim
  • Publication number: 20110168556
    Abstract: The present invention provides a nitrogen-oxide gas sensor that is able to measure nitric oxide and nitrogen dioxide at the same time and ensure measurement accuracy and long stability. The present invention relates to the nitrogen-oxide gas sensor that includes: an oxide ion conductive solid electrolyte; a primary film made of a metal oxide which contacts the solid electrolyte; a secondary film made of a metal oxide that contacts with the solid electrolyte and is separated from the first film; a power source that applies electric power to the primary and secondary films by electrically connecting a primary node to the primary film and a secondary node to the secondary film; a tertiary film made of a metal oxide that contacts the solid electrolyte, wherein the tertiary film and the primary film are connected to the power source in parallel; and a measurement unit that measures the electric potential difference between the primary and secondary nodes.
    Type: Application
    Filed: September 30, 2009
    Publication date: July 14, 2011
    Applicants: ILJIN COPPER FOIL CO., LTD., CIOS INC.
    Inventors: Jin Su Park, Byung Young Yoon, Jung Won Park, Jung Hwan Cho, Sang Beom Kim
  • Publication number: 20110163314
    Abstract: The present invention provides a nitrogen-oxide gas sensor that is able to measure nitric oxide and nitrogen dioxide at the same time and ensure measurement accuracy and long stability. For these purposes, the nitrogen-oxide gas sensor includes: an oxide ion conductive solid electrolyte; a primary film that contacts the solid electrolyte and is made of a p-type semi-conductor metal oxide; a secondary film that contacts the solid electrolyte and is made of a p-type semiconductor metal oxide; an n-type semiconductor metal oxide that is included in at least one of the primary and secondary films; a power source that applies electric power to the primary and secondary films by electrically connecting a primary node to the primary film and a secondary node to the secondary film; and a measurement unit that measures the electric potential difference between the primary and secondary nodes.
    Type: Application
    Filed: September 30, 2009
    Publication date: July 7, 2011
    Applicants: ILJIN COPPER FOIL CO., LTD., CIOS INC.
    Inventors: Jin Su Park, Byung Young Yoon, Jung Won Park, Jung Hwan Cho, Sang Beom Kim
  • Patent number: 5854034
    Abstract: The present invention relates to DNA segments isolated from Sphingomonas sp. and involved in the biosynthetic production of sphingan polysaccharides to increase the production of the polysaccharide in engineered microorganisms. The present invention also relates to methods of engineering strains of Sphingomonas to produce bacteria which are hyperproducers of sphingan, methods of identifying and utilizing DNA fragments useful to enhance production of sphingan in bacteria and the hyperproducer bacteria.
    Type: Grant
    Filed: January 24, 1996
    Date of Patent: December 29, 1998
    Assignees: Shin-Etsu Cio, Inc., Shin-Etsu Chemical Co., Ltd.
    Inventors: Thomas J. Pollock, Motohide Yamazaki, Linda Thorne, Marcia Mikolajczak, Richard W. Armentrout