Abstract: A light-emitting device includes a dam member disposed around an LED element. The dam member includes a base resin, a first-particle-size filler, and a second-particle-size filler. The dam member contains 10 to 50 wt % of the first-particle-size filler with respect to the base resin. The first-particle-size filler has an average particle size of 1 to 100 ?m. The dam member contains 4 to 15 wt % of the second-particle-size filler with respect to the base resin. The second-particle-size filler has an average particle size of 1 to 500 nm. The dam member has a side surface made by dicing.

Abstract: A light emitting device has a substrate, a plurality of light emitting elements mounted on the substrate, a first wavelength conversion members disposed so as to cover at least a portion of the upper surface of at least two light emitting elements of the plurality of light emitting elements, a sealing material sealing the plurality of light emitting elements and the first wavelength conversion members, and a transparent layer formed of a material different from the sealing material and is disposed between the substrate, the plurality of light emitting elements and the first wavelength conversion members, and the sealing material, wherein at least one side of each of the plurality of light emitting elements is disposed so as to face a side surface of the other light emitting element of the at least two light emitting elements, and not cover at least a portion of the non-facing side surfaces thereof.

Abstract: A light emitting device has a substrate, a plurality of first light emitting elements, each of which is mounted on the substrate, has a first LED die, and emits light having a first wavelength, a first light transmitting layer arranged so as to cover the plurality of first light emitting elements, the first light transmitting layer transmitting light emitted from the plurality of first light emitting elements, a second light transmitting layer arranged so as to cover the first light transmitting layer, the second light transmitting layer transmitting light that has transmitted through the first light transmitting layer, and a reflector having an upwardly bulging curved surface at an upper portion of an inner wall that the first light transmitting layer and the second light transmitting layer contact, the reflector being arranged on the substrate so as to surround the plurality of first light emitting elements and reflecting light emitted from the first light emitting elements, wherein the thickness T between

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A light emitting device has a substrate having a rectangular planar shape, one or a plurality of light emitting elements mounted on the substrate, a dam resin having a frame-like planar shape, arranged so as to surround the light emitting element, and having an inclined surface whose height increases as its distance from the light emitting element increases, and a seal resin arranged in an area surrounded by the dam resin and which seals the light emitting element, and the dam resin has a protruding portion extending and protruding from at least one side toward the opposite side.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: A light emitting device has a substrate having a rectangular planar shape, one or a plurality of light emitting elements mounted on the substrate, a dam resin having a frame-like planar shape, arranged so as to surround the light emitting element, and having an inclined surface whose height increases as its distance from the light emitting element increases, and a seal resin arranged in an area surrounded by the dam resin and which seals the light emitting element, and the dam resin has a protruding portion extending and protruding from at least one side toward the opposite side.

Abstract: A linear light-emitting device including a substrate extending while being curved in a predetermined direction, a plurality of light-emitting elements arranged on the substrate in a predetermined direction, and a seal for sealing the plurality of light-emitting elements, wherein a luminance of a specific part of the substrate is higher than that of the other parts of the substrate.

Abstract: A light emitting device includes a substrate, a plurality of first light emitting elements mounted on the substrate, including first LED dies, and emitting light having a first wavelength, and a light guide layer arranged so as to cover the plurality of first light emitting elements, and guiding the light from the plurality of first light emitting elements, wherein when LG1 is a distance between the first LED dies, and ?c is a critical angle of the light emitted from the light guide layer to the air, and a thickness T between the upper surfaces of the first light emitting elements and the upper surface of the light guide layer is equal to or longer than T1 indicated by T1=LG1/(2tan ?c).

Abstract: A light emitting device includes a first light emitting element, a second light emitting element, a first phosphor sheet containing a first phosphor and a third phosphor, and covering a top face of the first light emitting element, and a second phosphor sheet containing a second phosphor and a fourth phosphor, and covering a top face of the second light emitting element, wherein a peak wavelength of light which is wavelength-converted by the first phosphor or the third phosphor is equal to or less than a peak wavelength of light which is wavelength-converted by the second phosphor or the fourth phosphor.

Abstract: Phosphors include a CaAlSiN3 family crystal phase, wherein the CaAlSiN3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: Provided is an LED package and a method for manufacturing the same wherein, if its sealing resin containing phosphor particles each having a coating layer is cut or ground, age deterioration of the phosphor particles in the cut or ground surface is prevented. The method includes: mounting LED elements on a substrate; filling a first resin on the substrate to seal the LED elements, the first resin being transparent or translucent and containing wavelength conversion particles configured by forming a coating layer on at least part of the surface of each phosphor particle which converts the wavelength of light emitted from the LED elements; cutting or grinding the first resin; and forming a protective layer with a second resin on a cut surface of the first resin exposed as a result of the cutting or on a ground surface of the first resin, the second resin not containing the wavelength conversion particles.

Abstract: To provide a semiconductor light emitting device which is capable of accomplishing a broad color reproducibility for an entire image without losing brightness of the entire image. A light source provided on a backlight for a color image display device has a semiconductor light emitting device comprising a solid light emitting device to emit light in a blue or deep blue region or in an ultraviolet region and phosphors, in combination. The phosphors comprise a green emitting phosphor and a red emitting phosphor. The green emitting phosphor and the red emitting phosphor are ones, of which the rate of change of the emission peak intensity at 100° C. to the emission intensity at 25° C., when the wavelength of the excitation light is 400 nm or 455 nm, is at most 40%.

Abstract: It is an object of the present invention to improve light source efficiency of “a light-emitting device capable of realizing a natural, vivid, highly visible and comfortable appearance of colors or an appearance of objects” already arrived at by adopting a spectral power distribution having a shape completely different from the shape of conventionally known spectral power distributions while maintaining favorable color appearance characteristics.