Patents Assigned to Citizen Tohoku Co., Ltd.
  • Semiconductor light-emitting device and method of manufacturing the same
    Patent number: 7964868
    Abstract: Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).
    Type: Grant
    Filed: September 5, 2006
    Date of Patent: June 21, 2011
    Assignees: Citizen Tohoku Co., Ltd., Incorporated National University Iwate University
    Inventors: Akira Nakagawa, Yasube Kashiwaba, Ikuo Niikura
  • SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20090267063
    Abstract: Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).
    Type: Application
    Filed: September 5, 2006
    Publication date: October 29, 2009
    Applicants: CITIZEN TOHOKU CO., LTD., INCORPORATED NATIONAL UNIVERSITY IWATE UNIVERSITY
    Inventors: Akira Nakagawa, Yasube Kashiwaba, Ikuo Niikura