Abstract: A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.

Abstract: A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.

Abstract: A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.

Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.

Abstract: A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.

Abstract: A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto.

Abstract: A betavoltaic power source. The power source comprises a source of beta particles, one or more regions for collecting the beta particles and for generating electron hole pairs responsive thereto, and a secondary power source charged by a current developed by the electron hole pairs.

Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.

Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.

Abstract: Stabilization, via active-feedback positional drift-correction, of an optical microscope imaging system in up to 3-dimensions is achieved using the optical measurement path of an image sensor. Nanometer-scale stability of the imaging system is accomplished by correcting for positional drift using fiduciary references sparsely distributed within or in proximity to the experimental sample.

Abstract: An assembly carrying a radioisotope power source for attaching to a printed circuit board.