Patents Assigned to City Labs, Inc.
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Patent number: 11875907Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.Type: GrantFiled: October 3, 2022Date of Patent: January 16, 2024Assignee: CITY LABS, INC.Inventors: Peter Cabauy, Larry C. Olsen, Bret J. Elkind, Jesse Grant
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Patent number: 11783956Abstract: A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.Type: GrantFiled: December 13, 2021Date of Patent: October 10, 2023Assignee: City Labs, Inc.Inventor: Peter Cabauy
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Patent number: 11462337Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.Type: GrantFiled: April 12, 2021Date of Patent: October 4, 2022Assignee: CITY LABS, INC.Inventors: Peter Cabauy, Larry Olsen, Bret J. Elkind, Jesse Grant
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Patent number: 11270807Abstract: A betavoltaic power source. The power source comprises a source of beta particles and a plurality of regions each for collecting the beta particles and for generating electron hole pairs responsive to the beta particle flux. A first set of the plurality of regions is disposed proximate a first surface of the source and a second set of the plurality of regions is disposed proximate a second surface. The first and second surface in opposing relation. A secondary power source is charged by a current developed by the electron hole pairs.Type: GrantFiled: September 30, 2019Date of Patent: March 8, 2022Assignee: CITY LABS, INC.Inventor: Peter Cabauy
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Patent number: 11200997Abstract: A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.Type: GrantFiled: March 30, 2020Date of Patent: December 14, 2021Assignee: CITY LABS, INC.Inventor: Peter Cabauy
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Patent number: 10607744Abstract: A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.Type: GrantFiled: January 20, 2019Date of Patent: March 31, 2020Assignee: City Labs, Inc.Inventor: Peter Cabauy
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Patent number: 10431345Abstract: A betavoltaic power source. The power source comprises a source of beta particles and a plurality of regions each for collecting the beta particles and for generating electron hole pairs responsive to the beta particle flux. A first set of the plurality of regions is disposed proximate a first surface of the source and a second set of the plurality of regions is disposed proximate a second surface. The first and second surface in opposing relation. A secondary power source is charged by a current developed by the electron hole pairs.Type: GrantFiled: May 8, 2017Date of Patent: October 1, 2019Assignee: CITY LABS, INC.Inventors: Peter Cabauy, Bret J. Elkind, Jesse Grant
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Patent number: 9887018Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.Type: GrantFiled: October 6, 2016Date of Patent: February 6, 2018Assignee: City Labs, Inc.Inventors: Peter Cabauy, Larry C Olsen, Noren Pan
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Tritium direct conversion semiconductor device for use with gallium arsenide or germanium substrates
Patent number: 9799419Abstract: A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.Type: GrantFiled: February 17, 2015Date of Patent: October 24, 2017Assignee: City Labs, Inc.Inventors: Peter Cabauy, Larry C Olsen, Noren Pan -
Patent number: 9711250Abstract: A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto.Type: GrantFiled: June 24, 2014Date of Patent: July 18, 2017Assignee: City Labs, Inc.Inventor: Peter Cabauy
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Patent number: 9647299Abstract: A betavoltaic power source. The power source comprises a source of beta particles, one or more regions for collecting the beta particles and for generating electron hole pairs responsive thereto, and a secondary power source charged by a current developed by the electron hole pairs.Type: GrantFiled: June 13, 2014Date of Patent: May 9, 2017Assignee: City Labs, Inc.Inventor: Peter Cabauy
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Publication number: 20170092385Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.Type: ApplicationFiled: October 6, 2016Publication date: March 30, 2017Applicant: City Labs, Inc.Inventors: Peter Cabauy, Larry C. Olsen, Noren Pan
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Patent number: 9466401Abstract: A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.Type: GrantFiled: June 24, 2013Date of Patent: October 11, 2016Assignee: City Labs, Inc.Inventors: Peter Cabauy, Larry C Olsen, Noren Pan
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Patent number: 9019363Abstract: Stabilization, via active-feedback positional drift-correction, of an optical microscope imaging system in up to 3-dimensions is achieved using the optical measurement path of an image sensor. Nanometer-scale stability of the imaging system is accomplished by correcting for positional drift using fiduciary references sparsely distributed within or in proximity to the experimental sample.Type: GrantFiled: July 24, 2012Date of Patent: April 28, 2015Assignee: Mad City Labs, Inc.Inventors: James F. MacKay, William O'Brien, Eric A. Drier
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Publication number: 20150001988Abstract: A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto.Type: ApplicationFiled: June 24, 2014Publication date: January 1, 2015Applicant: CITY LABS, INC.Inventor: PETER CABAUY
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Publication number: 20140370332Abstract: A betavoltaic power source. The power source comprises a source of beta particles, one or more regions for collecting the beta particles and for generating electron hole pairs responsive thereto, and a secondary power source charged by a current developed by the electron hole pairs.Type: ApplicationFiled: June 13, 2014Publication date: December 18, 2014Applicant: CITY LABS, INC.Inventor: PETER CABAUY
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Patent number: 8634201Abstract: An assembly carrying a radioisotope power source for attaching to a printed circuit board.Type: GrantFiled: December 1, 2010Date of Patent: January 21, 2014Assignee: City Labs, Inc.Inventors: Peter Cabauy, Bret J. Elkind, Denset Serralta, Jesse Grant