Abstract: A semiconductor device includes a substrate layer having a first dopant density, an epitaxial layer comprising a second dopant density formed on the substrate layer and a semiconductor switch formed on the epitaxial layer, wherein the semiconductor switch comprises an active region of the semiconductor device. A first thickness of the epitaxial layer in the active region is less than a second thickness of the epitaxial layer in a termination region formed peripherally to the active region. The increased thickness of the epitaxial layer in the termination region enables the semiconductor device to have a relatively higher breakdown voltage without increasing the on-resistance of the semiconductor switch.

Abstract: An electrolysis machine which utilizes an electrically conductive probe to be physically inserted below the surface of the skin to be located next to a hair shaft within the hair follicle. The electrolysis machine includes two completely separate circuits. One circuit uses a direct current, while the other circuit emits a radio frequency. The amperage of the direct current is controlled to not exceed a certain pre-established value. Upon initial establishment of the circuit with the patient, or re-establishing of the circuit with the patient, surges in electrical current are prevented through the use of a circuit which slows the rise of current to the patient.