Abstract: The present invention pertains to a copolymer obtained by reacting a mixture of acrylonitrile or of a mixture of acrylonitrile and an organic molecule that can be copolymerized with acrylonitrile, with which a monomeric, oligomeric and/or polymeric silazane can be obtained, said silazane containing at least one vinylic double bond. The copolymer can be brought into fiber form and/or made infusible. The production of ceramic fibers by pyrolysis is possible with fiber-like copolymers.

Abstract: The invention relates to basic bisazo compounds according to formula (I) wherein all substituents are defined as in Claim 1, their production, their use as dyestuffs as well as material dyed with these dyestuffs.

Abstract: The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.

Abstract: The invention relates to a novel negative, aqueous photoresist composition comprising a polyvinylacetal polymer, a water-soluble photoactive compound and a crosslinking agent. The water-soluble photoactive compound is preferably a sulfonium salt. The invention also relates to forming a negative image from the novel photoresist composition.

Abstract: The present invention relates to a photoresist composition sensitive in the deep ultraviolet region and a method of processing the photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a solvent. The novel copolymer comprises a unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and a unit derived from an unsaturated cyclic non aromatic compound.

Abstract: The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.

Abstract: Process for making secondary amphoacetate and amphodiacetate of the formula ##STR1## wherein R.sup.1 is C.sub.8 -C.sub.18 -alkyl or C.sub.8 -C.sub.18 -alkenyl, R.sup.2 is hydrogen or a group of the formula --CH.sub.2 COOM and M is alkaline or alkaline earth metal, which comprises heating a compound of the formula 2 ##STR2## at pH between 7-14, at a temperature of 80 to 90 deg C. and for at least 24 hours and subsequent reaction with an aqueous solution of chloroacetic acid or is alkali salt at a pH from 7 fo 14 and a temperature of 80 to 90.degree. C. Due to the long period for the ring opening in the first step predominantly secondary products are obtained which are advantageous in that they show a low viscosity of their aqueous solution.

Abstract: A lining material for forming a tight barrier coating on a base material. The lining includes a thermoplastic polymer that does not cross-link in an aqueous dispersion. The thermoplastic polymer is 65%-85% of lining by dry matter weight. The lining also includes an additive including at least one particulate material having barrier-forming properties and in an aqueous dispersion. The additive is 15%-35% of the lining by dry matter weight. At least 95% of the particles of at least one particulate material fulfill the condition that the ratio between the largest and the smallest dimension of a particle of the particulate material is greater than 5:1.

Abstract: A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin having low metal ions, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a resin a photoresist composition of superior quality containing such novolak resin, and a method for producing a semiconductor device using such photoresist composition.

Abstract: Improved processes for the exhaust dyeing of cellulosic fibers with sulphur dyes in the presence of non-sulphide reducing agents wherein the dyeing of the textile substrate is performed in a closed vessel in an atmosphere of reduced oxygen level and then oxidizing.