Abstract: The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

Abstract: This disclosure describes a self-assembly templating of a cationic surfactant in the presence of a silica precursor that is free of an excessive variability of the assembled shapes and has a yield approaching one hundred percent. This disclosure describes a self-assembly process that includes cooling and keeping a resultant solution at cold temperatures during the synthesis.

Abstract: The present invention provides a method of removing silicon nitride in preference to silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and an additive that suppresses the silicon dioxide removal rate but enhances the silicon nitride removal rate. In one embodiment of the invention, the additive is lysine, which is effective at a pH of about 9, or arginine, which is effective at a pH of about 8. In another embodiment of the invention, the additive is lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8, or arginine in combination with picolinic acid, which is effective at a pH of about 9.

Abstract: The present invention provides a method for forming compositions having a plurality of ultra-fine metallic particles, and the metallic composition produced therewith. Also provided is a substrate coated with the plurality of ultra-fine metallic particles obtained in accordance with the method of the present invention.

Abstract: The present invention provides a metallic composition, which includes a plurality of ultra-fine copper flakes having at least one desirable feature, such as oxidation resistance and excellent dispersibility in a non-aqueous system. Also provided is a method for forming compositions having a plurality of ultra-fine copper flakes, and the metallic composition produced therewith.

Abstract: The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

Abstract: The present invention provides a method of removing silicon nitride in preference to silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and an additive that suppresses the silicon dioxide removal rate but enhances the silicon nitride removal rate. In one embodiment of the invention, the additive is lysine, which is effective at a pH of about 9, or arginine, which is effective at a pH of about 8. In another embodiment of the invention, the additive is lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8, or arginine in combination with picolinic acid, which is effective at a pH of about 9.

Abstract: A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and/or a polysilicon to silicon nitride. The method is particularly suitable for use in the fabrication of MEMS devices.

Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

Abstract: The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad.

Abstract: Bimetallic oxynitrides and nitrides which have catalytic properties comprise two transition metals selected from Groups IIIB to VIII of the Periodic Table of the Elements. Preferably, one metal is either molybdenum or tungsten. The other can be tungsten or molybdenum, respectively, or another transition metal, such as vanadium, niobium, chromium, manganese, cobalt, or nickel. They have a face centered cubic (fcc) arrangement of the metal atoms and have a surface area of no less than about 40 m.sup.2 /gm.

Abstract: Spherical particles include a core of a polymer and a metal compound covering the polymer core. These particles may be formed by homogeneously dispersing particles of a polymeric compound in an aqueous solution of a hydrolyzable metal salt to form a uniform metal layer around the spherical particles. The spherical particles can also include a core of carbon and a metal compound covering the carbon core or the particles can have a hollow core prepared by heating spherical polymer particles coated with a metal compound to a temperature of 150.degree. C. or higher in the presence of oxygen to completely decompose the polymeric compound. These spherical particles are useful in electronic materials, magnetic materials and the like.

Abstract: An improved process for the preparation of monodispersed spherical colloidal particles from rare earth salts is disclosed. These colloidal particles are obtained in this process by homogeneous precipitation techniques involving the forced hydrolysis of rare earth salts in aqueous media. More specifically, this process initially involves the formation of hydrolyzed cations which are precursors or intermediate to precipitation of the desired colloidal particle. The objective in the formation of this precursor species is to reach critical supersaturation concentration of this particle forming species so that only one burst of nuclei occurs. Colloidal particle formation is then effected by diffusion of solutes onto the existing nuclei. The improvements of this process reside, in part, in the ability to control the kinetics of formation of this intermediate species. Such control permits the formation of colloidal dispersions having very narrow particle size distribution.