Abstract: A bottom antireflective coating layer is made from the compositions of organic photosensitive materials containing isoflavone chromophore by photolithography utilizing deep ultraviolet light source for producing a submicro-level, large-scale integrated chip. A copolymer being contained an isoflavone chromophore is used as a bottom antireflective coating layer for fabricating a 64-megabit or gigabit DRAMs. The antireflective coating layer enables not only to suppress reflection of light that occurs under the substrate layer but also to remove standing waves. Consequently, a high-resolution sub-micron of 100˜200 nm integrated circuit is able to be stably formed. Therefore, it is possible to increase the production of semiconductors.