Abstract: A coating and developing device comprises a front end module (100), a process station (200), and an interface station (300) that are successively connected, wherein the process station (200) comprises a coating unit (210), a developing unit (220), at least one transversely moving of mobile conveying part (230), and at least one side robot (R0). After a substrate has been processed in the coating unit (210), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the interface station (300) by the mobile conveying part (230). After the substrate has been processed in the developing unit (220), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the front end module (100) by the mobile conveying part (230).

Abstract: A substrate processing apparatus comprises a processing chamber and a gas supply portion configured in an upper portion of the processing chamber, for supplying the processing gas into the processing chamber. A plurality of substrate holding portions are configured in the processing chamber and located below the gas supply portion, for holding substrates. An exhaust portion is configured in a lower portion of the processing chamber, for exhausting gas from the processing chamber. The exhaust portion comprises a plurality of exhaust grooves, a plurality of exhaust flow channels and a shared main exhaust port. Each exhaust groove is configured with a substrate holding portion and two exhaust flow channels, to connect the exhaust groove to the main exhaust port. Wherein, the main exhaust port is located at a geometric center of a plurality of substrate holding portions, and the plurality of exhaust flow channels have the same exhaust volume.

Abstract: The invention relates to an equipment for semiconductor production, in particular to a heat treatment apparatus. The apparatus comprises a cooling unit (200), a heating unit (300) and a transmission unit (400). The cooling unit (200) comprises a cooling plate (210) for cooling a substrate (w), and the heating unit (300) comprises a heating plate (310) for heating the substrate (w). The transmission unit (400) comprises a transmission arm (410), a lifting module and a linear module. The transmission arm (410) supports the substrate (w) and transmits the substrate (w) between the cooling unit (200) and the heating unit (300). The transmission arm (410) is disposed on the lifting module, and the lifting module drives the transmission arm (410) to ascend and descend. The linear module drives the transmission arm (410) to transmit the substrate (w) between the cooling plate (210) and the heating plate (310). The internal space of the apparatus is optimized.

Abstract: A gas supply apparatus and a substrate processing apparatus including the same are provided. The gas supply apparatus supplies a plurality groups of process gas to a substrate processing apparatus of which a plurality of wafers are placed in the inside. The gas supply apparatus includes a plurality of process gas supply units configured to supply the plurality groups of process gas; a process gas temporary reservoir including an inner space partitioned into a plurality of gas storage spaces isolated from each other, each of which configured to store one group of process gas supplied from one process gas supply unit and simultaneously supply the one group of process gas to the plurality of wafers.

Abstract: Disclosed is a film deposition device, having a substrate supporting component and comprising: a central shaft and a supporting base set on the top of the central shaft; a rotary shaft and a supporting ring set on the top of the rotary shaft, wherein the supporting ring is arranged around the supporting base, and the supporting base and the supporting ring are used for supporting a central area and an peripheral area of a substrate respectively; a first actuator connected to the rotary shaft for driving the supporting ring to rotate; a second actuator for driving the supporting ring and the supporting base to move relatively in a vertical direction; and a buffer portion for performing buffering when the substrate comes into contact with the supporting ring.

Abstract: A coating and developing device comprises a front end module (100), a process station (200), and an interface station (300) that are successively connected, wherein the process station (200) comprises a coating unit (210), a developing unit (220), at least one transversely moving of mobile conveying part (230), and at least one side robot (R0). After a substrate has been processed in the coating unit (210), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the interface station (300) by the mobile conveying part (230). After the substrate has been processed in the developing unit (220), the substrate is transferred to the mobile conveying part (230) by the at least one side robot (R0), and the substrate is transferred to the front end module (100) by the mobile conveying part (230).

Abstract: A furnace tube for thin film deposition, includes: a process tube; a wafer boat, arranged inside the process tube and provided with multi-layered supporting members along the length direction of the process tube; a gas supply tube, arranged inside the process tube and provided with multi-layered gas supply holes along the length direction of the process tube. Multi-layered exhaust holes are arranged on the sidewall of the process tube along the length direction, wherein the distribution area of the gas supply holes is gradually reduced from top to bottom along the length direction of the sidewall of the process tube, and the distribution area of the exhaust holes is gradually reduced from top to bottom along the length direction of the sidewall of the process tube.

Abstract: A high-temperature tube furnace comprises: a process tube (1) with a top cover (101) arranged on the top end thereof, the top cover (101) being provided with through holes (1011); a gas supply pipe (2) communicating with the through holes (1011) of the top cover (101) of the process tube (1), process gas being introduced into the process tube (1) through the gas supply pipe (2) and the through holes (1011) of the top cover (101) of the process tube (1); a wafer boat (3) arranged in the process tube (1), and comprising a supporting frame (301) and supporting plates (302), the supporting plates (302) being distributed in multiple layers along the length direction of the supporting frame (301) and used for supporting multiple substrates (w), each substrate (w) being placed on one supporting plate and each supporting plate supporting the entire bottom of the substrate (w).

Abstract: Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation.

Abstract: Embodiments of the present invention provide a substrate processing apparatus comprising a chemical liquid processing apparatus. The chemical liquid processing apparatus includes a first chemical liquid processing part, a second chemical liquid processing part configured to be stacked with the first chemical liquid processing part, a heating processing part located opposite the first chemical liquid processing part and the second chemical liquid processing part and a substrate transferring part located between the first and second chemical liquid processing parts and the heating processing part. The substrate transferring part is configured to have at least two first robots, at least one second robot and at least one third robot, all of which are arranged in parallel layers, and at least one pair of first buffer units located between two adjacent first robots and configured for loading and unloading the substrates therein and therefrom via the at least one second robot.