Abstract: A precursor solution adapted to provide a metal oxide film, includes: (a) at least one additive selected from a viscosity enhancer, a base, an acid and a wetting agent; (b) structural promoter ions selected from Mn, Ni, Co, Ir, Ru, Cr, Mo, W, Ta, Nb, V, Mo, Zr, V and Ti ions; and (c) at least one solvent. A method for preparing a metal oxide film includes: (a) providing a substrate; and (b) depositing on the substrate the precursor solution of the invention. Metal oxides films, electrochromic devices containing the films and methods for making them are also disclosed.

Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.