Patents Assigned to Clearist, Inc.
  • Patent number: 10788722
    Abstract: An electrochromic device is disclosed which has a plurality of layers, including at least one planarizing layer having an upper surface roughness which is less than or equal to half of the upper surface roughness of an underlying layer in contact with a lower surface of the at least one planarizing layer, wherein at least valleys of the underlying layer are filled by the lower surface of the at least one planarizing layer. A method for fabricating the electrochromic device is also disclosed.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: September 29, 2020
    Assignee: CLEARIST INC.
    Inventors: Paul P. Nguyen, Zhongchun Wang, Nelson R. Holcomb
  • Patent number: 10654056
    Abstract: A deposition method includes: (1) providing a nozzle structure including: (a) at least one corona generator having an elongated charge emitting surface; and (b) at least one aerosol channel adapted to guide an aerosol along a flow path past the at least one corona generator; (2) generating an aerosol of a precursor solution; (3) applying to the at least one corona generator a positive or negative voltage of 1 kV-100 kV with respect to the substrate to generate a corona; and (4) flowing the aerosol through the at least one aerosol channel, along the flow path near the at least one corona generator and toward the surface of the substrate so as to charge the aerosol with ions emitted from the at least one corona generator to form charged droplets which are attracted to and deposited on the substrate, wherein the elongated charge emitting surface is a wire or blade edge, which is substantially parallel to the surface of the substrate and substantially perpendicular to the flow path, provided that the at least one
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: May 19, 2020
    Assignee: Clearist Inc.
    Inventors: Paul P. Nguyen, Nelson Rob Holcomb
  • Patent number: 10310351
    Abstract: Embodiments of the invention generally provide electrochromic devices and materials and processes for forming such electrochromic devices and materials. In one embodiment, an electrochromic device contains a lower transparent conductor layer disposed on a substrate, wherein an upper surface of the lower transparent conductor layer has a surface roughness of greater than 50 nm and a primary electrochromic layer having planarizing properties is disposed on the lower transparent conductor layer. The upper surface of the primary electrochromic layer has a surface roughness less than the surface roughness of upper surface of the lower transparent conductor layer, such as about 50 nm or less.
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: June 4, 2019
    Assignee: CLEARIST INC.
    Inventor: Paul Phong Nguyen
  • Patent number: 9904137
    Abstract: A precursor solution adapted to provide a metal oxide film, includes: (a) at least one additive selected from a viscosity enhancer, a base, an acid and a wetting agent; (b) structural promoter ions selected from Mn, Ni, Co, Ir, Ru, Cr, Mo, W, Ta, Nb, V, Mo, Zr, V and Ti ions; and (c) at least one solvent. A method for preparing a metal oxide film includes: (a) providing a substrate; and (b) depositing on the substrate the precursor solution of the invention. Metal oxides films, electrochromic devices containing the films and methods for making them are also disclosed.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: February 27, 2018
    Assignee: Clearist, Inc.
    Inventors: Zhongchun Wang, Nelson R. Holcomb, Paul Phong Nguyen
  • Patent number: 8932495
    Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: January 13, 2015
    Assignee: Clearist, Inc.
    Inventors: Paul Phong Nguyen, Scott Allen Jewhurst