Abstract: The invention provides a UV-curable resin for forming a chemical-mechanical polishing pad comprising: (a) one or more acrylate blocked isocyanates; (b) one or more acrylate monomers; and (c) a photoinitiator. The invention also provides a method of forming a chemical-mechanical polishing pad using the UV-curable resin.

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive, (b) a surfactant, (c) an iron cation, (d) optionally a ligand, and (e) water, wherein the silica abrasive has a negative zeta potential in the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a carbon-based film, using said composition.

Abstract: A solid polymer electrolyte precursor composition includes (i) one or more organic solvents; (ii) one or more cellulosic polymers dissolved in the organic solvent(s); (iii) one or more polymerizable components dissolved or dispersed in the organic solvent(s); (iv) one or more photo-initiators dissolved or dispersed in the organic solvent(s), where at least one of the one or more photo-initiators, following irradiation with light, promotes polymerization of at least one of the one or more polymerizable components; (v) one or more lithium ion sources dissolved or dispersed in the organic solvent(s); (vi) one or more plasticizers dissolved or dispersed in the organic solvent(s); and (vii) one or more ceramic particles dissolved or dispersed in the organic solvent(s).

Abstract: A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y greater than about 0.05, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 ? and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 ?; and a pH in a range from about 7 to about 10. Optional embodiments further include a pH buffer having a pKa in a range from about 6 to about 9.

Abstract: The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.

Abstract: A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

Abstract: Coated compressive subpads for polishing pad stacks and methods of fabricating coated compressive subpads for polishing pad stacks are described. In an example, a polishing pad stack for polishing a substrate includes a polishing pad having a polishing surface and a back surface. The polishing pad stack also includes a compressive subpad with a first surface having a first pressure sensitive adhesive layer coated thereon. The first surface of the compressive subpad is coupled directly to the back surface of the polishing pad by the first pressure sensitive adhesive layer.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica, (b) a compound of formula (I), (c) a compound of formula (II), (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Abstract: A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including copper, barrier, and dielectric layers includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the copper, barrier, and dielectric layers from the substrate and thereby polish the substrate.

Abstract: A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.

Abstract: Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.

Abstract: Low density polishing pads and methods of fabricating low density polishing pads are described. In an example, a polishing pad for polishing a substrate includes a polishing body having a density approximately in the range of 0.4-0.55 g/cc. The polishing body includes a thermoset polyurethane material and a plurality of closed cell pores dispersed in the thermoset polyurethane material. Each of the plurality of closed cell pores has a shell composed of an acrylic co-polymer.

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.