Abstract: A hand strap for an electronic apparatus is provided with a first gripper, which is attached to a rear surface of an electronic apparatus in a removable manner, and a second gripper. The first gripper has a main body and an accommodation portion. The second gripper includes a fixed portion and an extra-long portion, one end of which is a free end. The extra-long portion is accommodated inside the accommodation portion, and can adjust the entire length of the second gripper. A finger accommodation space in which a finger other than a thumb is disposed between the first gripper and the second gripper, is defined. By gripping the first gripper with the pad and the tip end of a finger other than a thumb, it is possible to perform operation with a thumb over a wide area of a touch panel while holding an electronic apparatus with one hand.
Abstract: A manufacturing method of a rotating element including a cylindrical fitting portion having a pair of circumferential end portions forming an axial slit between the circumferential end portions, the cylindrical fitting portion being serration-fitted to a rotating shaft, includes: clamping the fitting portion by a clamp jig so that the fitting portion is elastically deformed in an elliptical shape; forming a female serration arranged in an elliptical shape by use of a tool having an elliptical section, the female serration being formed on an inner peripheral surface of the fitting portion elastically deformed in the elliptical shape; and releasing the clamping by the clamp jig so that the arrangement of the female serration is changed to a perfect-circle shape from the elliptical shape.
Abstract: The manufacturing method of oxide thin film transistors (TFTs) includes: providing a substrate and forming an oxide semiconductor active layer on the substrate; depositing an insulation dielectric layer on the active layer; and applying an annealing process to components formed after the insulation dielectric layer is deposited. After depositing the gate insulation layer on the oxide semiconductor active layer, the annealing process is applied to the formed component, which eliminates the difference of the component performance caused by the insulation dielectric layer formed by different film formation processes such that the reproducibility of the film formation processes may be enhanced.
Type:
Grant
Filed:
October 9, 2016
Date of Patent:
January 1, 2019
Assignee:
Wuhan China Star Optoelectronics Technology Co., Ltd
Abstract: A method of manufacturing an insertion-type connector having at least two mutually electrically insulated conductor contacts with the conductor contacts cut from a metal sheet in such a way that they are connected together via a connecting part of the metal sheet, the conductor contacts being partly embedded in an electrically insulating material to form an electrically insulating housing which fixes the conductor contacts relative to one another, and the connecting part then separated off.
Type:
Grant
Filed:
October 31, 2016
Date of Patent:
January 1, 2019
Assignee:
Rosenberger Hochfrequenztechnik GmbH & Co. KG
Abstract: The invention relates to management of programs on a mobile device, and in particular, to a method for activating application programs on a mobile device, and a mobile device based on this method. The method for activating application programs on a mobile device according to an embodiment of the invention comprises the following steps: receiving an application request from a device which is located outside the mobile device; identifying a transmission protocol associated with the application request; and if there are a plurality of safety entities in the mobile device which support the transmission protocol and store application programs associated with the application request, activating an application program associated with the application request in a default safety entity.
Abstract: A semiconductor device includes a substrate and a device. The substrate has a first surface and a second surface opposite to each other. The substrate includes a first well region, and the first well region includes a first shallow implantation region adjacent to the first surface and a first deep implantation region adjacent to the second surface, in which a dopant concentration of the first deep implantation region at the second surface is substantially equal to 0. The device is disposed on the first surface of the substrate and adjoins the first shallow implantation region.
Abstract: A mask for forming a pattern on a substrate is provided. The mask includes an anodic oxide film formed by anodizing metal, at least one transmission hole configured to vertically penetrate the anodic oxide film and formed in a corresponding relationship with the pattern, a plurality of pores formed in the anodic oxide film so as to have a smaller diameter than the transmission hole, and a magnetic material provided in each of the pores.
Type:
Grant
Filed:
April 19, 2017
Date of Patent:
January 1, 2019
Assignee:
Point Engineering Co., Ltd.
Inventors:
Bum Mo Ahn, Seung Ho Park, Sung Hyun Byun
Abstract: An electrical connector for electrically connecting a chip module, including an insulating body provided with multiple accommodating grooves in multiple rows and vertically passing through the insulating body. Each two adjacent accommodating grooves are provided with a partition or a space above the partition. The insulating body is concavely provided downward with at least one groove correspondingly located on the partition or in the space above the partition. The groove has a bottom surface and a side surface being closed and formed by extending upward from a periphery of the bottom surface, and the groove is configured for a pushing pin to push and eject the insulating body from a mold. The insulating body is protrudingly provided upward with a plurality of protruding blocks, configured to support the chip module. The groove and all the protruding blocks are not located on the same partition.