Abstract: A radio frequency integrated circuit (RFIC) and method of communication are provided. The RFIC includes phased-locked loop (PLL) and data stream circuitry and a plurality of tiles in communication with the PLL and data stream circuitry. The plurality of tiles includes comprising at least one tile for each frequency band of the RFIC. The plurality of tiles are configured to communicate a data stream signal between tiles in a cascading sequence. Each tile of the plurality of tiles includes a plurality of up/down conversion mixers for converting the data stream signal between an intermediate frequency (IF) and a radio frequency (RF). Each tile also includes a plurality of front end (FE) elements, each in communication with a corresponding antenna and an up/down conversion mixer of the plurality of up/down conversion mixers.
Type:
Grant
Filed:
April 20, 2021
Date of Patent:
October 8, 2024
Assignee:
Samsung Electronics Co., Ltd
Inventors:
Venumadhav Bhagavatula, Siu-Chuang Ivan Lu, Sang Won Son
Abstract: An electronic device and a memristor-based logic gate circuit thereof. In the present application, a control end of a controllable switch is connected to a negative end of an output memristor in a MAGIC-based AND logic gate, and whether a second memristor is powered on is controlled by the controllable switch. Thus, when resistance value states of two input memristors in the AND logic gate are different, the controllable switch will conduct and power on the second memristor, and the second memristor will present a low-resistance state at this time. When the resistance value states of the two input memristors are the same, the controllable switch will not conduct and the second memristor will then remain the state unchanged, i.e., presents a high-resistance state. An exclusive OR logic gate is formed by combining the two input memristors and the second memristor.
Abstract: A rotating motor and a fan are provided. In the rotating motor, by arranging a first bearing seat, a second bearing seat, and a plurality of support rods to form the supporting frame, the coaxiality between the first bearing seat and the second bearing seat can be ensured to reduce the accumulated tolerance of assembly. In addition, the motor has a stator having stator teeth. The inner diameter of the inner circular hole of the stator teeth is disposed to be larger than the outer diameter of the second bearing seat.
Type:
Grant
Filed:
May 26, 2022
Date of Patent:
October 8, 2024
Assignee:
GUANGDONG WELLING MOTOR MANUFACTURING CO., LTD.
Inventors:
Yajun Zuo, Yueqiang Yu, Chuang Chi, Hongxiao Wang
Abstract: A Peripheral Component Interconnect Express (PCIE) device, apparatus, and method with different PCIE bandwidths compatible in the same PCIE slot. The device includes a PCIE single board. A first core chip corresponding to a first PCIE XN device and a second core chip corresponding to a second PCIE XN device are arranged on the PCIE single board. An XN+XN gold finger is further arranged on a body of the PCIE single board. The XN+XN gold finger is formed by two XN gold fingers.
Abstract: Provided is a display apparatus including: a liquid crystal panel; a substrate; a light source module disposed on the substrate. The light source module includes a light emitting diode disposed on the substrate, a feed pad provided on the substrate, an antistatic pad provided on the substrate; and an insulating dome provided on the substrate and covering the light emitting diode. The antistatic pad is divided into two parts by an outline of the insulating dome.
Abstract: A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.
Type:
Grant
Filed:
August 29, 2019
Date of Patent:
October 8, 2024
Assignees:
KYOTO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
Abstract: The present invention provides a manufacturing method of a molded product by which the cutting accuracy of a burr provided on the peripheral surface of the molded body can be improved. According to the present invention, provided is a manufacturing method of a molded product, comprising a measurement step; a correction step; and a burr cutting step, wherein, in the measurement step, a position of at least one point on a peripheral surface of a molded body is measured while the molded body is in a positioned state, in the correction step, a master cutting line is corrected on the basis of a measurement result in the measurement step to determine a corrected cutting line, and in the burr cutting step, a burr provided on the peripheral surface of the molded body is cut according to the corrected cutting line.
Abstract: Inbred corn line, designated MN40, are disclosed. The disclosure relates to the seeds of inbred corn line MN40, to the plants and plant parts of inbred corn line MN40 and to methods for producing a corn plant, either inbred or hybrid, by crossing inbred corn line MN40 with itself or another corn line. The disclosure also relates to products produced from the seeds, plants, or parts thereof, of inbred corn line MN40 and/or of the hybrids produced using the inbred as a parent. The disclosure further relates to methods for producing a corn plant containing in its genetic material one or more transgenes and to the transgenic plants produced by that method and to methods for producing other corn lines derived from inbred corn line MN40.
Type:
Grant
Filed:
April 12, 2022
Date of Patent:
October 8, 2024
Assignees:
Limagrain Europe S.A., KWS SAAT SE & Co. KGaA