Abstract: A semiconductor device with reduced power consumption is provided. With three transistors, potentials of two nodes are switched and a voltage is detected. One of a source and a drain of a first transistor is electrically connected to a first terminal. The other of the source and the drain of the first transistor is electrically connected to a non-inverting input of a comparator through a first node. One of a source and a drain of a second transistor is electrically connected to a second terminal. The other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of a third transistor through a second node. The other of the source and the drain of the third transistor is electrically connected to a third terminal. A first capacitor is provided between the first node and the second node. An inverting input of the comparator is electrically connected to a fourth terminal. An output of the comparator is electrically connected to a fifth terminal.

Abstract: Disclosed in the present application are a display apparatus and a processing method. According to the method, a data stream from the external device in connection with the display apparatus is received; a device information frame in the data stream is obtained, where the device information frame is a data frame generated by the external device according to a basic transmission protocol between the external device and the display apparatus; marker bits in the device information frame are traversed; in response to the external device supporting the automatic control protocol, a play mode is switched according to usage scenario information added in the data stream; and in response to the external device not supporting the automatic control protocol, a play mode is switched according to a device type of the external device.

Abstract: A speaker comprises a housing, a transducer residing inside the housing, and at least one sound guiding hole located on the housing. The transducer generates vibrations. The vibrations produce a sound wave inside the housing and cause a leaked sound wave spreading outside the housing from a portion of the housing. The at least one sound guiding hole guides the sound wave inside the housing through the at least one sound guiding hole to an outside of the housing. The guided sound wave interferes with the leaked sound wave in a target region. The interference at a specific frequency relates to a distance between the at least one sound guiding hole and the portion of the housing.

Abstract: A substrate polishing apparatus including a stage configured to load a substrate, the stage having a flat surface, which is parallel to a first direction and a second direction, and on which the substrate is loaded, a pressing unit configured to exert a pressure on the substrate in a third direction, a rotary unit configured to revolve the pressing unit around a central axis parallel to the third direction, when viewed in a plan view, a plurality of polishing pads provided between the pressing unit and the substrate to be in contact with the substrate, and a nozzle part configured to supply a slurry onto the substrate. The polishing pads may be spaced apart from each other in a direction and may have a rectangular shape in the plan view.

Abstract: A display apparatus with increased security performance, for using the resources of a restricted secure world (SW), and/or an operation method thereof. The display apparatus may include a display, and a controller including at least one processor configured to perform one or more instructions to separately run a normal operating system (OS) and a secure OS, which are respectively executed in a normal world (NWD) and an SWD corresponding to a TrustZone.

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Abstract: The present disclosure provides for sequentially turning on a plurality of power conversion modules according to the magnitude of load power at the time of driving the power conversion modules, operating power conversion modules which have already been turned on in an optimum efficiency interval, and providing increased load power through a power conversion module which has been newly turned on.

Abstract: This disclosure provides communications methods and apparatuses. In an implementation, a terminal device performs operations comprising: receiving first configuration information from a network device, wherein the first configuration information indicates a configured quantity of physical downlink control channel (PDCCH) candidate locations in a time unit corresponding to a first control resource set (CORESET) group of a plurality of CORESET groups in a target cell, and determining, based on the configured quantity and a first quantity, a quantity of PDCCH candidate locations for PDCCH detection in the time unit corresponding to the first CORESET group, wherein the first quantity is a preset quantity of PDCCH candidate locations in a time unit corresponding to a CORESET group in the target cell.

Abstract: Disclosed are a laterally diffused metal oxide semiconductor device and a method for preparing the same. The device includes a substrate (101) of a first conductivity type, a drift region (102) of a second conductivity type, a longitudinal floating field plate array and a plurality of implantation regions (103) of the first conductivity type. The drift region is located in the substrate of the first conductivity type. The longitudinal floating field plate array includes a plurality of longitudinal floating field plate structures (104) arranged at intervals in rows and columns. Each longitudinal floating field plate structures includes a dielectric layer (1041) disposed on an inner surface of a trench and a conductive layer (1042) filling the trench. The plurality of implantation regions are located in the drift region of, each implantation region is located between two adjacent longitudinal floating field plate structures in each row.

Abstract: Provided is a thermoelectric generation module including a plurality of p-type thermoelectric elements 24a and a plurality of n-type thermoelectric elements 24b alternately connected in series and mounted with sandwiched by first and second flexible printed circuit boards 32, 33. The p-type thermoelectric elements and the n-type thermoelectric elements have a chip size of 1 mm or less and 0.2 mm or greater and a height of 0.8 mm or greater and 3 mm or less.

Abstract: A processor-implemented method includes generating a preprocessed infrared (IR) image by performing first preprocessing based on an IR image including an object; generating a preprocessed depth image by performing second preprocessing based on a depth image including the object; and determining whether the object is a genuine object based on the preprocessed IR image and the preprocessed depth image.

Abstract: A resource allocation method and a communication device are provided. The resource allocation method of the present disclosure is operable by a base station, the base station includes a Central Unit (CU) and a Distributed Unit (DU) connected to the CU. The method includes: determining, by the DU, a Sidelink (SL) resource allocation mode; and allocating, by the DU, SL resource for a UE according to the determined resource allocation mode and User Equipment (UE) context information.

Abstract: A machine tool and a control method for the machine tool, which determine the degree of misalignment during friction joint, are provided. The machine tool (an automatic lathe 1) includes: a first spindle 10 rotatably holding a first workpiece (a workpiece W1); a second spindle 20 arranged to face the first spindle and rotatably holding a second workpiece (a remaining workpiece W2); and a controller 40a, while rotating at least one of the first workpiece or the second workpiece, relatively moving the first spindle and the second spindle so as to get closer to each other and pushing a rear end portion of the second workpiece against a front end portion of the first workpiece to frictionally join the first and second workpieces. The controller has a misalignment amount detector detecting a misalignment amount s of the second workpiece with respect to the first workpiece during the friction joint.

Abstract: A method of manufacturing a semiconductor package includes forming an insulating layer; forming a seed layer on the insulating layer; forming a photoresist layer on the seed layer; forming a plurality of line pattern holes by patterning the photoresist layer, a horizontal length of a middle portion of each of the plurality of line pattern holes being less than a horizontal length of an upper portion of each of the plurality of line pattern holes and a horizontal length of a lower portion of each of the plurality of line pattern holes; and forming a redistribution line pattern by performing a plating process using a portion of the seed layer exposed by the plurality of line pattern holes.

Abstract: A transmission method, apparatus, and system implement bidirectional transmission of an audio/video signal between peer devices. The transmission system may include a first transmission apparatus and a second transmission apparatus, where the first transmission apparatus is connected to the second transmission apparatus through a first cable, and the first cable includes a first number of main downlink lanes and a second number of main uplink lanes. Bidirectional transmission of the audio/video signal between the first transmission apparatus and the second transmission apparatus is performed through the first cable.

Abstract: Disclosed is a charge pump of a flash memory, which includes a first stage pump that is connected between an output terminal and a first pump node, and a second stage pump that is connected between the first pump node and a second pump node. The first stage pump includes a first switch circuit that is connected between a power terminal and the first pump node and provides a power supply voltage to the first pump node in response to a first stage signal, in a normal operation, and a first pump circuit that generates a first pumping voltage by using a voltage of the first pump node in response to a first clock signal and provides the first pumping voltage to the output terminal. The first switch circuit blocks a current flow from the first pump node to the power terminal in a sudden power-off event.

Abstract: An apparatus can include a substrate, a first antenna panel, a second antenna panel and a wall isolator. The first antenna panel can be coupled on the substrate and comprising an array of first antenna elements. The second antenna panel can be coupled on the substrate comprising an array of second antenna elements. The wall isolator can be coupled on the substrate. The wall isolator can include a first EBG element and a second EBG element. The first EBG element can be positioned along an edge of the first antenna panel for a length of the substrate and configured to reduce surface wave propagation from the array of first antenna elements. The second EBG element can be positioned along an edge of the second antenna panel for a length of the substrate and configured to reduce surface wave propagation from the array of second antenna elements.

Abstract: For a connector including a terminal and a housing into which the terminal is inserted, the degrees of freedom of design are raised for a retaining portion that retains the terminal, and adjustment of connector characteristics such as impedance is facilitated. A connector is configured including terminals (signal terminals and power source terminals) and housings into which the terminals are inserted. The housings are configured including a first housing (the fitting housing) and a second housing (the mounted housing). The first housing includes first side retaining portions (signal terminal retaining portions and power source terminal retaining portions of the fitting housing) that retain portions of the terminals. The second housing includes second side retaining portions (signal terminal retaining portions and power source terminal retaining portions of the mounted housing) that retain other portions of the terminals.

Abstract: A wireless charging transmitting apparatus and method and a wireless charging system are provided. The transmitting apparatus includes a compensation circuit, an inverter circuit, a transmitting coil, an impedance adjustment circuit, and a controller. The impedance adjustment circuit includes a leading-bridge-arm impedance adjustment circuit and a lagging-bridge-arm impedance adjustment circuit, and the leading-bridge-arm impedance adjustment circuit and the lagging-bridge-arm impedance adjustment circuit each include an inductive branch, where the inductive branch includes at least one controllable inductive branch, and each controllable inductive branch includes at least one inductor and at least one switch. The controller controls the switches in the controllable inductive branches to be turned on or off, to adjust values of inductive currents injected into a leading bridge arm and a lagging bridge arm through the impedance adjustment circuit.

Abstract: A control device includes a reference unit, a correction unit, and a target setting unit. The correction unit sets a reference correction current serving as a reference in determining the correction current to 0 in an extremely low velocity range of a change velocity of a stroke amount, sets the reference correction current to a predetermined steady-state value in a medium and high velocity range of the change velocity, and sets the reference correction current to a value equal to or larger than 0 and equal to or smaller than the steady-state value in a low velocity range of the change velocity.