Patents Assigned to Cobham Electronic Systems Corporation
  • Field-effect transistor (FET) with embedded diode
    Patent number: 8183658
    Abstract: A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs also may be provided with adjacent FETs electrically isolated.
    Type: Grant
    Filed: May 28, 2008
    Date of Patent: May 22, 2012
    Assignee: Cobham Electronic Systems Corporation
    Inventors: Ronald C. Meadows, Thomas A. Winslow