Abstract: The present invention provides a method for anisotropically dry etching a substrate, in which the substrate is brought into a processing area; a vacuum is applied over the processing area; and an audio frequency signal is applied at the electrodes of the processing area; such as to create a plasma at the processing area, having a power density substantially above 0.01 Watts/cm.sup.3. Further, an apparatus for carrying out this method comprises a self-DC-bias on the cathode.