Patents Assigned to Cogar Corporation
  • Semiconductor diffusion process
    Patent number: 3932239
    Abstract: This disclosure is directed to a semiconductor diffusion process for diffusing impurities into a semiconductor substrate. Open tube phosphorous diffusion process conditions are described wherein diffused region depth control is achieved by the initial deposition time. This permits creation of a diffused region having the benefits of low sheet resistance and shallow depth. Additionally, the diffusion process enables the formation of very thick thermal oxide layers which are particularly useful in MOS or FET device fabrication.
    Type: Grant
    Filed: October 27, 1970
    Date of Patent: January 13, 1976
    Assignee: Cogar Corporation
    Inventor: William A. Brown