Abstract: A semiconductor device with reduced leakage current and a method of manufacturing these reduced leakage current semiconductor devices are disclosed. The reduced leakage current semiconductor devices may be used for both static circuits and dynamic circuits. The reduced leakage current semiconductor devices reduce leakage current in the device when the node is not transitioning which occurs more than 95% of the time.
Abstract: A semiconductor device with reduced leakage current and a method of manufacturing these reduced leakage current semiconductor devices are disclosed. The reduced leakage current semiconductor devices may be used for both static circuits and dynamic circuits. The reduced leakage current semiconductor devices reduce leakage current in the device when the node is not transitioning which occurs more than 95% of the time.
Abstract: A semiconductor device with reduced leakage current and a method of manufacturing these reduced leakage current semiconductor devices are disclosed. The reduced leakage current semiconductor devices may be used for both static circuits and dynamic circuits. The reduced leakage current semiconductor devices reduce leakage current in the device when the node is not transitioning which occurs more than 95% of the time.